GATE VALVE SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
(과제) 진공처리실 및 진공예비실의 기밀성 및 청정도를 향상시킬 수 있는 게이트 밸브, 기판 처리 장치 및 기판 처리 방법을 제공하는 것. (해결 수단) 게이트 밸브(30)는, 진공처리실(10) 및 진공예비실(20)의 서로 대향 배치된 기판 반출입구(24a)의 전체 둘레를 둘러싸는 환상의 시일 부재(25a, 25b)에 대하여 진공처리실(10) 및 진공예비실(20)의 각각에 대향하는 측의 면을 맞닿게 하여 진공처리실(10)과 진공예비실(20)의 사이를 개폐가 자유롭게 접속하고, 진공처리실(10) 또는 진공예비실(20)의 적어도 일방의...
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| creator | OHIZUMI YUKIO SUZUKI KAITO HOSHINO YOSHIFUMI |
| description | (과제) 진공처리실 및 진공예비실의 기밀성 및 청정도를 향상시킬 수 있는 게이트 밸브, 기판 처리 장치 및 기판 처리 방법을 제공하는 것. (해결 수단) 게이트 밸브(30)는, 진공처리실(10) 및 진공예비실(20)의 서로 대향 배치된 기판 반출입구(24a)의 전체 둘레를 둘러싸는 환상의 시일 부재(25a, 25b)에 대하여 진공처리실(10) 및 진공예비실(20)의 각각에 대향하는 측의 면을 맞닿게 하여 진공처리실(10)과 진공예비실(20)의 사이를 개폐가 자유롭게 접속하고, 진공처리실(10) 또는 진공예비실(20)의 적어도 일방의 기판 반출입구(24a)의 전체 둘레를 내외 이중으로 둘러싸도록 설치한 시일 부재(25a, 25b)의 사이 및 게이트 밸브(30) 내부의 하나 이상의 부위에 내외 이중으로 하여 설치한 다른 시일 부재(40a, 40b)의 사이에 시일용 유로(51, 54)를 설치하고, 복수의 시일용 유로를 포함하여 유입구(50a)로부터 유출구(50n)까지 연속하여 흐르도록 불활성 가스를 유도하는 가스 유통용 유로(50)를 갖추었다.
A gate valve, a substrate processing apparatus, and a substrate processing method which can improve the airtightness and cleanliness of a vacuum processing chamber and a vacuum preliminary chamber. A gate valve has a face facing a vacuum processing chamber and a face facing a vacuum preliminary chamber, the faces abutting on annular sealing members surrounding entire circumferences of substrate loading/unloading ports of the vacuum processing chamber and the vacuum preliminary chamber, and openably and closably connects the vacuum processing chamber and the vacuum preliminary chamber. The gate valve includes sealing channels provided between the sealing members doubly provided outside and inside surrounding the entire circumference of at least one of the substrate loading/unloading ports and between other sealing members doubly provided outside and inside in one or more parts inside the gate valve, and a gas circulation channel including the sealing channels. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20240031087A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20240031087A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20240031087A3</originalsourceid><addsrcrecordid>eNrjZPB0dwxxVQhz9AlzVQgOdQoOCQLxA4L8nV2Dgz393BUcAwIcgWKhwQqOfi7Ylfi6hnj4u_AwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUknjvICMDIxMDA2NDAwtzR2PiVAEAF80uWg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>GATE VALVE SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD</title><source>esp@cenet</source><creator>OHIZUMI YUKIO ; SUZUKI KAITO ; HOSHINO YOSHIFUMI</creator><creatorcontrib>OHIZUMI YUKIO ; SUZUKI KAITO ; HOSHINO YOSHIFUMI</creatorcontrib><description>(과제) 진공처리실 및 진공예비실의 기밀성 및 청정도를 향상시킬 수 있는 게이트 밸브, 기판 처리 장치 및 기판 처리 방법을 제공하는 것. (해결 수단) 게이트 밸브(30)는, 진공처리실(10) 및 진공예비실(20)의 서로 대향 배치된 기판 반출입구(24a)의 전체 둘레를 둘러싸는 환상의 시일 부재(25a, 25b)에 대하여 진공처리실(10) 및 진공예비실(20)의 각각에 대향하는 측의 면을 맞닿게 하여 진공처리실(10)과 진공예비실(20)의 사이를 개폐가 자유롭게 접속하고, 진공처리실(10) 또는 진공예비실(20)의 적어도 일방의 기판 반출입구(24a)의 전체 둘레를 내외 이중으로 둘러싸도록 설치한 시일 부재(25a, 25b)의 사이 및 게이트 밸브(30) 내부의 하나 이상의 부위에 내외 이중으로 하여 설치한 다른 시일 부재(40a, 40b)의 사이에 시일용 유로(51, 54)를 설치하고, 복수의 시일용 유로를 포함하여 유입구(50a)로부터 유출구(50n)까지 연속하여 흐르도록 불활성 가스를 유도하는 가스 유통용 유로(50)를 갖추었다.
A gate valve, a substrate processing apparatus, and a substrate processing method which can improve the airtightness and cleanliness of a vacuum processing chamber and a vacuum preliminary chamber. A gate valve has a face facing a vacuum processing chamber and a face facing a vacuum preliminary chamber, the faces abutting on annular sealing members surrounding entire circumferences of substrate loading/unloading ports of the vacuum processing chamber and the vacuum preliminary chamber, and openably and closably connects the vacuum processing chamber and the vacuum preliminary chamber. The gate valve includes sealing channels provided between the sealing members doubly provided outside and inside surrounding the entire circumference of at least one of the substrate loading/unloading ports and between other sealing members doubly provided outside and inside in one or more parts inside the gate valve, and a gas circulation channel including the sealing channels.</description><language>eng ; kor</language><subject>ACTUATING-FLOATS ; BASIC ELECTRIC ELEMENTS ; BLASTING ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COCKS ; DEVICES FOR VENTING OR AERATING ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ENGINEERING ELEMENTS AND UNITS ; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVEFUNCTIONING OF MACHINES OR INSTALLATIONS ; HEATING ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; LIGHTING ; MECHANICAL ENGINEERING ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TAPS ; THERMAL INSULATION IN GENERAL ; VALVES ; WEAPONS</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240307&DB=EPODOC&CC=KR&NR=20240031087A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240307&DB=EPODOC&CC=KR&NR=20240031087A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OHIZUMI YUKIO</creatorcontrib><creatorcontrib>SUZUKI KAITO</creatorcontrib><creatorcontrib>HOSHINO YOSHIFUMI</creatorcontrib><title>GATE VALVE SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD</title><description>(과제) 진공처리실 및 진공예비실의 기밀성 및 청정도를 향상시킬 수 있는 게이트 밸브, 기판 처리 장치 및 기판 처리 방법을 제공하는 것. (해결 수단) 게이트 밸브(30)는, 진공처리실(10) 및 진공예비실(20)의 서로 대향 배치된 기판 반출입구(24a)의 전체 둘레를 둘러싸는 환상의 시일 부재(25a, 25b)에 대하여 진공처리실(10) 및 진공예비실(20)의 각각에 대향하는 측의 면을 맞닿게 하여 진공처리실(10)과 진공예비실(20)의 사이를 개폐가 자유롭게 접속하고, 진공처리실(10) 또는 진공예비실(20)의 적어도 일방의 기판 반출입구(24a)의 전체 둘레를 내외 이중으로 둘러싸도록 설치한 시일 부재(25a, 25b)의 사이 및 게이트 밸브(30) 내부의 하나 이상의 부위에 내외 이중으로 하여 설치한 다른 시일 부재(40a, 40b)의 사이에 시일용 유로(51, 54)를 설치하고, 복수의 시일용 유로를 포함하여 유입구(50a)로부터 유출구(50n)까지 연속하여 흐르도록 불활성 가스를 유도하는 가스 유통용 유로(50)를 갖추었다.
A gate valve, a substrate processing apparatus, and a substrate processing method which can improve the airtightness and cleanliness of a vacuum processing chamber and a vacuum preliminary chamber. A gate valve has a face facing a vacuum processing chamber and a face facing a vacuum preliminary chamber, the faces abutting on annular sealing members surrounding entire circumferences of substrate loading/unloading ports of the vacuum processing chamber and the vacuum preliminary chamber, and openably and closably connects the vacuum processing chamber and the vacuum preliminary chamber. The gate valve includes sealing channels provided between the sealing members doubly provided outside and inside surrounding the entire circumference of at least one of the substrate loading/unloading ports and between other sealing members doubly provided outside and inside in one or more parts inside the gate valve, and a gas circulation channel including the sealing channels.</description><subject>ACTUATING-FLOATS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BLASTING</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COCKS</subject><subject>DEVICES FOR VENTING OR AERATING</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ENGINEERING ELEMENTS AND UNITS</subject><subject>GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVEFUNCTIONING OF MACHINES OR INSTALLATIONS</subject><subject>HEATING</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>LIGHTING</subject><subject>MECHANICAL ENGINEERING</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TAPS</subject><subject>THERMAL INSULATION IN GENERAL</subject><subject>VALVES</subject><subject>WEAPONS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPB0dwxxVQhz9AlzVQgOdQoOCQLxA4L8nV2Dgz393BUcAwIcgWKhwQqOfi7Ylfi6hnj4u_AwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUknjvICMDIxMDA2NDAwtzR2PiVAEAF80uWg</recordid><startdate>20240307</startdate><enddate>20240307</enddate><creator>OHIZUMI YUKIO</creator><creator>SUZUKI KAITO</creator><creator>HOSHINO YOSHIFUMI</creator><scope>EVB</scope></search><sort><creationdate>20240307</creationdate><title>GATE VALVE SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD</title><author>OHIZUMI YUKIO ; SUZUKI KAITO ; HOSHINO YOSHIFUMI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20240031087A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2024</creationdate><topic>ACTUATING-FLOATS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BLASTING</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COCKS</topic><topic>DEVICES FOR VENTING OR AERATING</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ENGINEERING ELEMENTS AND UNITS</topic><topic>GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVEFUNCTIONING OF MACHINES OR INSTALLATIONS</topic><topic>HEATING</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>LIGHTING</topic><topic>MECHANICAL ENGINEERING</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TAPS</topic><topic>THERMAL INSULATION IN GENERAL</topic><topic>VALVES</topic><topic>WEAPONS</topic><toplevel>online_resources</toplevel><creatorcontrib>OHIZUMI YUKIO</creatorcontrib><creatorcontrib>SUZUKI KAITO</creatorcontrib><creatorcontrib>HOSHINO YOSHIFUMI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OHIZUMI YUKIO</au><au>SUZUKI KAITO</au><au>HOSHINO YOSHIFUMI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GATE VALVE SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD</title><date>2024-03-07</date><risdate>2024</risdate><abstract>(과제) 진공처리실 및 진공예비실의 기밀성 및 청정도를 향상시킬 수 있는 게이트 밸브, 기판 처리 장치 및 기판 처리 방법을 제공하는 것. (해결 수단) 게이트 밸브(30)는, 진공처리실(10) 및 진공예비실(20)의 서로 대향 배치된 기판 반출입구(24a)의 전체 둘레를 둘러싸는 환상의 시일 부재(25a, 25b)에 대하여 진공처리실(10) 및 진공예비실(20)의 각각에 대향하는 측의 면을 맞닿게 하여 진공처리실(10)과 진공예비실(20)의 사이를 개폐가 자유롭게 접속하고, 진공처리실(10) 또는 진공예비실(20)의 적어도 일방의 기판 반출입구(24a)의 전체 둘레를 내외 이중으로 둘러싸도록 설치한 시일 부재(25a, 25b)의 사이 및 게이트 밸브(30) 내부의 하나 이상의 부위에 내외 이중으로 하여 설치한 다른 시일 부재(40a, 40b)의 사이에 시일용 유로(51, 54)를 설치하고, 복수의 시일용 유로를 포함하여 유입구(50a)로부터 유출구(50n)까지 연속하여 흐르도록 불활성 가스를 유도하는 가스 유통용 유로(50)를 갖추었다.
A gate valve, a substrate processing apparatus, and a substrate processing method which can improve the airtightness and cleanliness of a vacuum processing chamber and a vacuum preliminary chamber. A gate valve has a face facing a vacuum processing chamber and a face facing a vacuum preliminary chamber, the faces abutting on annular sealing members surrounding entire circumferences of substrate loading/unloading ports of the vacuum processing chamber and the vacuum preliminary chamber, and openably and closably connects the vacuum processing chamber and the vacuum preliminary chamber. The gate valve includes sealing channels provided between the sealing members doubly provided outside and inside surrounding the entire circumference of at least one of the substrate loading/unloading ports and between other sealing members doubly provided outside and inside in one or more parts inside the gate valve, and a gas circulation channel including the sealing channels.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ACTUATING-FLOATS BASIC ELECTRIC ELEMENTS BLASTING CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COCKS DEVICES FOR VENTING OR AERATING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ENGINEERING ELEMENTS AND UNITS GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVEFUNCTIONING OF MACHINES OR INSTALLATIONS HEATING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIGHTING MECHANICAL ENGINEERING METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TAPS THERMAL INSULATION IN GENERAL VALVES WEAPONS |
| title | GATE VALVE SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
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