SHOWERHEAD CURTAIN GAS METHOD AND SYSTEM FOR FILM PROFILE MODULATION

막을 증착하기 위한 방법들 및 시스템들이 개시된다. 방법들은: (a) 챔버 내에서 막 증착을 수행하기 위해, 챔버 내의 스테이션 각각의 주변부 둘레를 흐르는 커튼 가스의 플로우 조건을 포함하는 프로세스 조건들을 결정하는 단계, (b) 단계 (a) 에서 결정된 프로세스 조건들에 따른 막 증착 동안 챔버 내의 스테이션 각각으로 커튼 가스를 흘리는 단계, (c) 단계 (b) 동안 또는 단계 (b) 후에, 기판 불균일도를 개선하기 위해 챔버 내의 커튼 가스의 조정된 플로우 조건을 결정하는 단계, 및 (d) 단계 (c) 후에, 단계 (c)...

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Hauptverfasser: KARIM ISHTAK, LAVOIE ADRIEN
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LAVOIE ADRIEN
description 막을 증착하기 위한 방법들 및 시스템들이 개시된다. 방법들은: (a) 챔버 내에서 막 증착을 수행하기 위해, 챔버 내의 스테이션 각각의 주변부 둘레를 흐르는 커튼 가스의 플로우 조건을 포함하는 프로세스 조건들을 결정하는 단계, (b) 단계 (a) 에서 결정된 프로세스 조건들에 따른 막 증착 동안 챔버 내의 스테이션 각각으로 커튼 가스를 흘리는 단계, (c) 단계 (b) 동안 또는 단계 (b) 후에, 기판 불균일도를 개선하기 위해 챔버 내의 커튼 가스의 조정된 플로우 조건을 결정하는 단계, 및 (d) 단계 (c) 후에, 단계 (c) 에서 결정된 조정된 플로우 조건에 따른 막 증착 동안 커튼 가스를 흘리는 단계를 포함할 수도 있다. 시스템들은 가스 전달 시스템, 프로세싱 챔버 및 단계 (a) 내지 단계 (d) 중 하나 이상을 수행하기 위한 제어 로직을 갖는 제어기를 포함할 수도 있다. Disclosed are methods of and systems for depositing a film. The methods may include: (a) determining process conditions, including a flow condition of a curtain gas that flows around the periphery of each station in the chamber, for performing film deposition in the chamber, (b) flowing the curtain gas to each station in the chamber during film deposition according to the process conditions determined in (a), (c) determining, during or after (b), an adjusted flow condition of the curtain gas in the chamber to improve substrate nonuniformity, and (d) flowing, after (c), the curtain gas during film deposition according to the adjusted flow condition determined in (c). The systems may include a gas delivery system, a processing chamber, and a controller having control logic for performing one or more of (a)-(d).
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Disclosed are methods of and systems for depositing a film. The methods may include: (a) determining process conditions, including a flow condition of a curtain gas that flows around the periphery of each station in the chamber, for performing film deposition in the chamber, (b) flowing the curtain gas to each station in the chamber during film deposition according to the process conditions determined in (a), (c) determining, during or after (b), an adjusted flow condition of the curtain gas in the chamber to improve substrate nonuniformity, and (d) flowing, after (c), the curtain gas during film deposition according to the adjusted flow condition determined in (c). The systems may include a gas delivery system, a processing chamber, and a controller having control logic for performing one or more of (a)-(d).</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20231204&amp;DB=EPODOC&amp;CC=KR&amp;NR=20230164622A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20231204&amp;DB=EPODOC&amp;CC=KR&amp;NR=20230164622A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KARIM ISHTAK</creatorcontrib><creatorcontrib>LAVOIE ADRIEN</creatorcontrib><title>SHOWERHEAD CURTAIN GAS METHOD AND SYSTEM FOR FILM PROFILE MODULATION</title><description>막을 증착하기 위한 방법들 및 시스템들이 개시된다. 방법들은: (a) 챔버 내에서 막 증착을 수행하기 위해, 챔버 내의 스테이션 각각의 주변부 둘레를 흐르는 커튼 가스의 플로우 조건을 포함하는 프로세스 조건들을 결정하는 단계, (b) 단계 (a) 에서 결정된 프로세스 조건들에 따른 막 증착 동안 챔버 내의 스테이션 각각으로 커튼 가스를 흘리는 단계, (c) 단계 (b) 동안 또는 단계 (b) 후에, 기판 불균일도를 개선하기 위해 챔버 내의 커튼 가스의 조정된 플로우 조건을 결정하는 단계, 및 (d) 단계 (c) 후에, 단계 (c) 에서 결정된 조정된 플로우 조건에 따른 막 증착 동안 커튼 가스를 흘리는 단계를 포함할 수도 있다. 시스템들은 가스 전달 시스템, 프로세싱 챔버 및 단계 (a) 내지 단계 (d) 중 하나 이상을 수행하기 위한 제어 로직을 갖는 제어기를 포함할 수도 있다. Disclosed are methods of and systems for depositing a film. The methods may include: (a) determining process conditions, including a flow condition of a curtain gas that flows around the periphery of each station in the chamber, for performing film deposition in the chamber, (b) flowing the curtain gas to each station in the chamber during film deposition according to the process conditions determined in (a), (c) determining, during or after (b), an adjusted flow condition of the curtain gas in the chamber to improve substrate nonuniformity, and (d) flowing, after (c), the curtain gas during film deposition according to the adjusted flow condition determined in (c). The systems may include a gas delivery system, a processing chamber, and a controller having control logic for performing one or more of (a)-(d).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAJ9vAPdw3ycHV0UXAODQpx9PRTcHcMVvB1DfHwd1Fw9HNRCI4MDnH1VXDzD1Jw8_TxVQgI8gfSrgq-_i6hPo4hnv5-PAysaYk5xam8UJqbQdnNNcTZQze1ID8-tbggMTk1L7Uk3jvIyMDI2MDQzMTMyMjRmDhVAP_pLI8</recordid><startdate>20231204</startdate><enddate>20231204</enddate><creator>KARIM ISHTAK</creator><creator>LAVOIE ADRIEN</creator><scope>EVB</scope></search><sort><creationdate>20231204</creationdate><title>SHOWERHEAD CURTAIN GAS METHOD AND SYSTEM FOR FILM PROFILE MODULATION</title><author>KARIM ISHTAK ; LAVOIE ADRIEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20230164622A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>KARIM ISHTAK</creatorcontrib><creatorcontrib>LAVOIE ADRIEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KARIM ISHTAK</au><au>LAVOIE ADRIEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SHOWERHEAD CURTAIN GAS METHOD AND SYSTEM FOR FILM PROFILE MODULATION</title><date>2023-12-04</date><risdate>2023</risdate><abstract>막을 증착하기 위한 방법들 및 시스템들이 개시된다. 방법들은: (a) 챔버 내에서 막 증착을 수행하기 위해, 챔버 내의 스테이션 각각의 주변부 둘레를 흐르는 커튼 가스의 플로우 조건을 포함하는 프로세스 조건들을 결정하는 단계, (b) 단계 (a) 에서 결정된 프로세스 조건들에 따른 막 증착 동안 챔버 내의 스테이션 각각으로 커튼 가스를 흘리는 단계, (c) 단계 (b) 동안 또는 단계 (b) 후에, 기판 불균일도를 개선하기 위해 챔버 내의 커튼 가스의 조정된 플로우 조건을 결정하는 단계, 및 (d) 단계 (c) 후에, 단계 (c) 에서 결정된 조정된 플로우 조건에 따른 막 증착 동안 커튼 가스를 흘리는 단계를 포함할 수도 있다. 시스템들은 가스 전달 시스템, 프로세싱 챔버 및 단계 (a) 내지 단계 (d) 중 하나 이상을 수행하기 위한 제어 로직을 갖는 제어기를 포함할 수도 있다. Disclosed are methods of and systems for depositing a film. The methods may include: (a) determining process conditions, including a flow condition of a curtain gas that flows around the periphery of each station in the chamber, for performing film deposition in the chamber, (b) flowing the curtain gas to each station in the chamber during film deposition according to the process conditions determined in (a), (c) determining, during or after (b), an adjusted flow condition of the curtain gas in the chamber to improve substrate nonuniformity, and (d) flowing, after (c), the curtain gas during film deposition according to the adjusted flow condition determined in (c). The systems may include a gas delivery system, a processing chamber, and a controller having control logic for performing one or more of (a)-(d).</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title SHOWERHEAD CURTAIN GAS METHOD AND SYSTEM FOR FILM PROFILE MODULATION
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