METHOD FOR MANUFACTURING PHOTOMASK
A method for manufacturing a photomask capable of forming patterns with different optical characteristics by suppressing the occurrence of overlap errors during exposure is provided. A photomask blank having a semi-transmissive film, an intermediate film, and an upper layer film is prepared on a tra...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; kor |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | YAMADA SHINGO OJIMA SHOJIRO MORIYAMA KUMIKO |
| description | A method for manufacturing a photomask capable of forming patterns with different optical characteristics by suppressing the occurrence of overlap errors during exposure is provided. A photomask blank having a semi-transmissive film, an intermediate film, and an upper layer film is prepared on a transparent substrate, and the photoresist film formed on the upper layer film is exposed to form a first region, a second region, and a third region with different exposure amounts. Thereafter, the first region is selectively removed and the upper layer film is etched. Thereafter, the second region is selectively removed, the semi-transmissive film is etched, and the upper layer film and middle film are also etched. Afterwards, the third area is removed.
다른 광학 특성을 가지는 패턴을, 노광시의 중첩 오차의 발생을 억제하여 형성할 수 있는 포토마스크의 제조 방법을 제공한다. 투과성 기판 상에 반투과막, 중간막, 상층막을 가지는 포토마스크 블랭크를 준비하고, 상층막 상에 형성된 포토레지스트막을 노광하여 노광량이 다른 제 1의 영역, 제 2의 영역 및 제 3의 영역을 형성한다. 그 후, 제 1의 영역을 선택적으로 제거하여 상층막을 에칭한다. 그 후, 제 2의 영역을 선택적으로 제거하고, 반투과막을 에칭하며 또한 상층막 및 중간막을 에칭한다. 그 후, 제 3의 영역을 제거한다. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20230161386A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20230161386A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20230161386A3</originalsourceid><addsrcrecordid>eNrjZFDydQ3x8HdRcPMPUvB19At1c3QOCQ3y9HNXCPDwD_H3dQz25mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8d5BRgZGxgaGZobGFmaOxsSpAgDP_iN3</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR MANUFACTURING PHOTOMASK</title><source>esp@cenet</source><creator>YAMADA SHINGO ; OJIMA SHOJIRO ; MORIYAMA KUMIKO</creator><creatorcontrib>YAMADA SHINGO ; OJIMA SHOJIRO ; MORIYAMA KUMIKO</creatorcontrib><description>A method for manufacturing a photomask capable of forming patterns with different optical characteristics by suppressing the occurrence of overlap errors during exposure is provided. A photomask blank having a semi-transmissive film, an intermediate film, and an upper layer film is prepared on a transparent substrate, and the photoresist film formed on the upper layer film is exposed to form a first region, a second region, and a third region with different exposure amounts. Thereafter, the first region is selectively removed and the upper layer film is etched. Thereafter, the second region is selectively removed, the semi-transmissive film is etched, and the upper layer film and middle film are also etched. Afterwards, the third area is removed.
다른 광학 특성을 가지는 패턴을, 노광시의 중첩 오차의 발생을 억제하여 형성할 수 있는 포토마스크의 제조 방법을 제공한다. 투과성 기판 상에 반투과막, 중간막, 상층막을 가지는 포토마스크 블랭크를 준비하고, 상층막 상에 형성된 포토레지스트막을 노광하여 노광량이 다른 제 1의 영역, 제 2의 영역 및 제 3의 영역을 형성한다. 그 후, 제 1의 영역을 선택적으로 제거하여 상층막을 에칭한다. 그 후, 제 2의 영역을 선택적으로 제거하고, 반투과막을 에칭하며 또한 상층막 및 중간막을 에칭한다. 그 후, 제 3의 영역을 제거한다.</description><language>eng ; kor</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231127&DB=EPODOC&CC=KR&NR=20230161386A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231127&DB=EPODOC&CC=KR&NR=20230161386A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMADA SHINGO</creatorcontrib><creatorcontrib>OJIMA SHOJIRO</creatorcontrib><creatorcontrib>MORIYAMA KUMIKO</creatorcontrib><title>METHOD FOR MANUFACTURING PHOTOMASK</title><description>A method for manufacturing a photomask capable of forming patterns with different optical characteristics by suppressing the occurrence of overlap errors during exposure is provided. A photomask blank having a semi-transmissive film, an intermediate film, and an upper layer film is prepared on a transparent substrate, and the photoresist film formed on the upper layer film is exposed to form a first region, a second region, and a third region with different exposure amounts. Thereafter, the first region is selectively removed and the upper layer film is etched. Thereafter, the second region is selectively removed, the semi-transmissive film is etched, and the upper layer film and middle film are also etched. Afterwards, the third area is removed.
다른 광학 특성을 가지는 패턴을, 노광시의 중첩 오차의 발생을 억제하여 형성할 수 있는 포토마스크의 제조 방법을 제공한다. 투과성 기판 상에 반투과막, 중간막, 상층막을 가지는 포토마스크 블랭크를 준비하고, 상층막 상에 형성된 포토레지스트막을 노광하여 노광량이 다른 제 1의 영역, 제 2의 영역 및 제 3의 영역을 형성한다. 그 후, 제 1의 영역을 선택적으로 제거하여 상층막을 에칭한다. 그 후, 제 2의 영역을 선택적으로 제거하고, 반투과막을 에칭하며 또한 상층막 및 중간막을 에칭한다. 그 후, 제 3의 영역을 제거한다.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDydQ3x8HdRcPMPUvB19At1c3QOCQ3y9HNXCPDwD_H3dQz25mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8d5BRgZGxgaGZobGFmaOxsSpAgDP_iN3</recordid><startdate>20231127</startdate><enddate>20231127</enddate><creator>YAMADA SHINGO</creator><creator>OJIMA SHOJIRO</creator><creator>MORIYAMA KUMIKO</creator><scope>EVB</scope></search><sort><creationdate>20231127</creationdate><title>METHOD FOR MANUFACTURING PHOTOMASK</title><author>YAMADA SHINGO ; OJIMA SHOJIRO ; MORIYAMA KUMIKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20230161386A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2023</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMADA SHINGO</creatorcontrib><creatorcontrib>OJIMA SHOJIRO</creatorcontrib><creatorcontrib>MORIYAMA KUMIKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMADA SHINGO</au><au>OJIMA SHOJIRO</au><au>MORIYAMA KUMIKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR MANUFACTURING PHOTOMASK</title><date>2023-11-27</date><risdate>2023</risdate><abstract>A method for manufacturing a photomask capable of forming patterns with different optical characteristics by suppressing the occurrence of overlap errors during exposure is provided. A photomask blank having a semi-transmissive film, an intermediate film, and an upper layer film is prepared on a transparent substrate, and the photoresist film formed on the upper layer film is exposed to form a first region, a second region, and a third region with different exposure amounts. Thereafter, the first region is selectively removed and the upper layer film is etched. Thereafter, the second region is selectively removed, the semi-transmissive film is etched, and the upper layer film and middle film are also etched. Afterwards, the third area is removed.
다른 광학 특성을 가지는 패턴을, 노광시의 중첩 오차의 발생을 억제하여 형성할 수 있는 포토마스크의 제조 방법을 제공한다. 투과성 기판 상에 반투과막, 중간막, 상층막을 가지는 포토마스크 블랭크를 준비하고, 상층막 상에 형성된 포토레지스트막을 노광하여 노광량이 다른 제 1의 영역, 제 2의 영역 및 제 3의 영역을 형성한다. 그 후, 제 1의 영역을 선택적으로 제거하여 상층막을 에칭한다. 그 후, 제 2의 영역을 선택적으로 제거하고, 반투과막을 에칭하며 또한 상층막 및 중간막을 에칭한다. 그 후, 제 3의 영역을 제거한다.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; kor |
| recordid | cdi_epo_espacenet_KR20230161386A |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | METHOD FOR MANUFACTURING PHOTOMASK |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T17%3A20%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YAMADA%20SHINGO&rft.date=2023-11-27&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20230161386A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |