Power semiconductor device power semiconductor chip including the same and method for manufacturing the same

A power semiconductor device according to one embodiment of the present invention may comprise: gate electrodes which are arranged to be recessed from a first surface of a semiconductor substrate towards a second surface facing the first surface, respectively; an emitter area which is arranged to be...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YUN SEONG HWAN, WOO HYUK, PARK TAE YOUNG, LEE JU HWAN, JO SEON HYEONG, KANG MIN GI, KIM TAE YANG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!