Broadband photodiode and manufacturing method thereof

The present invention relates to a photodiode and a manufacturing method thereof, and relates to a photodiode including black silicon. The black silicon is formed by forming a plurality of inverted conical holes (ICH) from the upper surface of a substrate to the lower side. Therefore, the photodiode...

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Bibliographische Detailangaben
Hauptverfasser:	KYU HWAN SHIM, DEOK HO CHO, SANG SIG CHOI, HWAN JU CHOI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	The present invention relates to a photodiode and a manufacturing method thereof, and relates to a photodiode including black silicon. The black silicon is formed by forming a plurality of inverted conical holes (ICH) from the upper surface of a substrate to the lower side. Therefore, the photodiode is useful in a UV-IR band. 본 발명은 포토다이오드 및 그 제조방법에 관한 것으로, 블랙 실리콘을 포함하는 포토다이오드로서, 상기 블랙 실리콘은 기판의 상면으로부터 하부측으로 역전된 원추형 홀(ICH, inverted conical hole)을 다수로 형성하여 된 것을 특징으로 한다.