란타나이드 및 란타나이드 유사 전이 금속 착물
개시되고 청구된 주제는 일반식 (i) (Cp 리간드)2-M-(Ad 리간드) 또는 (ii) (Cp 리간드)-M-(Ad 리간드)2의, 적어도 하나의 테더링된 사이클로펜타다이에닐 리간드("Cp 리간드"), 적어도 하나의 아미디네이트 리간드("Ad 리간드") 및 란타나이드 및/또는 란타나이드 유사 전이 금속("M")을 갖는 전구체를 제공한다. The disclosed and claimed subject matter provides precursors having at least one...
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| creator | HEIL HOLGER FANG MING BRUGE DAVID KROMPIEC MICHAL WETZEL CHRISTOPH IVANOV SERGEI V LIETZAU LARS |
| description | 개시되고 청구된 주제는 일반식 (i) (Cp 리간드)2-M-(Ad 리간드) 또는 (ii) (Cp 리간드)-M-(Ad 리간드)2의, 적어도 하나의 테더링된 사이클로펜타다이에닐 리간드("Cp 리간드"), 적어도 하나의 아미디네이트 리간드("Ad 리간드") 및 란타나이드 및/또는 란타나이드 유사 전이 금속("M")을 갖는 전구체를 제공한다.
The disclosed and claimed subject matter provides precursors having at least one tethered cyclopentadienyl ligand ("Cp ligand"), at least one amidinate ligand ("Ad ligand") and a lanthanide and/or lanthanide-like transition metal ("M") of the general formulae (i) (Cp ligand)2-M-(Ad ligand) or (ii) (Cp ligand)-M-(Ad ligand)2. |
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The disclosed and claimed subject matter provides precursors having at least one tethered cyclopentadienyl ligand ("Cp ligand"), at least one amidinate ligand ("Ad ligand") and a lanthanide and/or lanthanide-like transition metal ("M") of the general formulae (i) (Cp ligand)2-M-(Ad ligand) or (ii) (Cp ligand)-M-(Ad ligand)2.</description><language>kor</language><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; ORGANIC CHEMISTRY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230721&DB=EPODOC&CC=KR&NR=20230110312A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230721&DB=EPODOC&CC=KR&NR=20230110312A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HEIL HOLGER</creatorcontrib><creatorcontrib>FANG MING</creatorcontrib><creatorcontrib>BRUGE DAVID</creatorcontrib><creatorcontrib>KROMPIEC MICHAL</creatorcontrib><creatorcontrib>WETZEL CHRISTOPH</creatorcontrib><creatorcontrib>IVANOV SERGEI V</creatorcontrib><creatorcontrib>LIETZAU LARS</creatorcontrib><title>란타나이드 및 란타나이드 유사 전이 금속 착물</title><description>개시되고 청구된 주제는 일반식 (i) (Cp 리간드)2-M-(Ad 리간드) 또는 (ii) (Cp 리간드)-M-(Ad 리간드)2의, 적어도 하나의 테더링된 사이클로펜타다이에닐 리간드("Cp 리간드"), 적어도 하나의 아미디네이트 리간드("Ad 리간드") 및 란타나이드 및/또는 란타나이드 유사 전이 금속("M")을 갖는 전구체를 제공한다.
The disclosed and claimed subject matter provides precursors having at least one tethered cyclopentadienyl ligand ("Cp ligand"), at least one amidinate ligand ("Ad ligand") and a lanthanide and/or lanthanide-like transition metal ("M") of the general formulae (i) (Cp ligand)2-M-(Ad ligand) or (ii) (Cp ligand)-M-(Ad ligand)2.</description><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>ORGANIC CHEMISTRY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB_Pa_hbXPD66YZb-ZueT15jsLrDf0K6GJv5ix407RG4c2CFqCAwqsdHW_aehXebFj5es0eHgbWtMSc4lReKM3NoOzmGuLsoZtakB-fWlyQmJyal1oS7x1kZGBkbGBoaGBsaORoTJwqAKIZQsQ</recordid><startdate>20230721</startdate><enddate>20230721</enddate><creator>HEIL HOLGER</creator><creator>FANG MING</creator><creator>BRUGE DAVID</creator><creator>KROMPIEC MICHAL</creator><creator>WETZEL CHRISTOPH</creator><creator>IVANOV SERGEI V</creator><creator>LIETZAU LARS</creator><scope>EVB</scope></search><sort><creationdate>20230721</creationdate><title>란타나이드 및 란타나이드 유사 전이 금속 착물</title><author>HEIL HOLGER ; FANG MING ; BRUGE DAVID ; KROMPIEC MICHAL ; WETZEL CHRISTOPH ; IVANOV SERGEI V ; LIETZAU LARS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20230110312A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>kor</language><creationdate>2023</creationdate><topic>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>ORGANIC CHEMISTRY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>HEIL HOLGER</creatorcontrib><creatorcontrib>FANG MING</creatorcontrib><creatorcontrib>BRUGE DAVID</creatorcontrib><creatorcontrib>KROMPIEC MICHAL</creatorcontrib><creatorcontrib>WETZEL CHRISTOPH</creatorcontrib><creatorcontrib>IVANOV SERGEI V</creatorcontrib><creatorcontrib>LIETZAU LARS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HEIL HOLGER</au><au>FANG MING</au><au>BRUGE DAVID</au><au>KROMPIEC MICHAL</au><au>WETZEL CHRISTOPH</au><au>IVANOV SERGEI V</au><au>LIETZAU LARS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>란타나이드 및 란타나이드 유사 전이 금속 착물</title><date>2023-07-21</date><risdate>2023</risdate><abstract>개시되고 청구된 주제는 일반식 (i) (Cp 리간드)2-M-(Ad 리간드) 또는 (ii) (Cp 리간드)-M-(Ad 리간드)2의, 적어도 하나의 테더링된 사이클로펜타다이에닐 리간드("Cp 리간드"), 적어도 하나의 아미디네이트 리간드("Ad 리간드") 및 란타나이드 및/또는 란타나이드 유사 전이 금속("M")을 갖는 전구체를 제공한다.
The disclosed and claimed subject matter provides precursors having at least one tethered cyclopentadienyl ligand ("Cp ligand"), at least one amidinate ligand ("Ad ligand") and a lanthanide and/or lanthanide-like transition metal ("M") of the general formulae (i) (Cp ligand)2-M-(Ad ligand) or (ii) (Cp ligand)-M-(Ad ligand)2.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | 란타나이드 및 란타나이드 유사 전이 금속 착물 |
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