System for diagnosing Performance Of Semiconductor Apparatus and Method for Driving The Same
The present invention relates to a performance diagnosis system for a semiconductor device and a driving method thereof. The performance diagnosis system for a semiconductor device includes: a sensing unit including a pressure sensor for measuring pressure of process gas stored in a measurement spac...
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| creator | JI HYEON PARK JEONG WOO YEOM SEON HO KO SANG MIN WOO HYE SEON LEE CHI WON AHN TAE SUB NOH BYEOUNG GEUN SON DEOK GYU PARK SEUNG JAE YANG |
| description | The present invention relates to a performance diagnosis system for a semiconductor device and a driving method thereof. The performance diagnosis system for a semiconductor device includes: a sensing unit including a pressure sensor for measuring pressure of process gas stored in a measurement space and a temperature sensor for measuring the temperature of the process gas stored in the measurement space; a flow controller controlling and outputting the process gas provided from the measurement space at a set flow rate; and a verification block predicting an actual flow rate of the process gas based on the pressure and temperature of the process gas measured through the pressure sensor and the temperature sensor, and comparing the predicted actual flow rate of the process gas with the set flow rate of the flow controller. Therefore, the present invention is capable of preventing a defective semiconductor device.
반도체 장치의 성능 진단 시스템 및 그 구동 방법에 관한 기술이다. 개시된 반도체 장치의 성능 진단 시스템은, 측정 공간내에 수용된 공정 가스의 압력을 측정하는 압력 센서 및 상기 측정 공간내에 수용된 상기 공정 가스의 온도를 측정하는 온도 센서를 포함하는 센싱부; 상기 측정 공간으로부터 제공된 상기 공정 가스를 설정 유량으로 제어하여 출력하는 유량 제어기; 및 상기 압력 센서 및 상기 온도 센서를 통해 측정된 상기 공정 가스의 압력 및 온도에 기초하여 상기 공정 가스의 실제 유량을 예측하고, 예측된 상기 공정 가스의 실제 유량과 상기 유량 제어기의 설정 유량을 비교하는 검증 블록을 포함한다. |
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반도체 장치의 성능 진단 시스템 및 그 구동 방법에 관한 기술이다. 개시된 반도체 장치의 성능 진단 시스템은, 측정 공간내에 수용된 공정 가스의 압력을 측정하는 압력 센서 및 상기 측정 공간내에 수용된 상기 공정 가스의 온도를 측정하는 온도 센서를 포함하는 센싱부; 상기 측정 공간으로부터 제공된 상기 공정 가스를 설정 유량으로 제어하여 출력하는 유량 제어기; 및 상기 압력 센서 및 상기 온도 센서를 통해 측정된 상기 공정 가스의 압력 및 온도에 기초하여 상기 공정 가스의 실제 유량을 예측하고, 예측된 상기 공정 가스의 실제 유량과 상기 유량 제어기의 설정 유량을 비교하는 검증 블록을 포함한다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230703&DB=EPODOC&CC=KR&NR=20230097287A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230703&DB=EPODOC&CC=KR&NR=20230097287A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JI HYEON PARK</creatorcontrib><creatorcontrib>JEONG WOO YEOM</creatorcontrib><creatorcontrib>SEON HO KO</creatorcontrib><creatorcontrib>SANG MIN WOO</creatorcontrib><creatorcontrib>HYE SEON LEE</creatorcontrib><creatorcontrib>CHI WON AHN</creatorcontrib><creatorcontrib>TAE SUB NOH</creatorcontrib><creatorcontrib>BYEOUNG GEUN SON</creatorcontrib><creatorcontrib>DEOK GYU PARK</creatorcontrib><creatorcontrib>SEUNG JAE YANG</creatorcontrib><title>System for diagnosing Performance Of Semiconductor Apparatus and Method for Driving The Same</title><description>The present invention relates to a performance diagnosis system for a semiconductor device and a driving method thereof. The performance diagnosis system for a semiconductor device includes: a sensing unit including a pressure sensor for measuring pressure of process gas stored in a measurement space and a temperature sensor for measuring the temperature of the process gas stored in the measurement space; a flow controller controlling and outputting the process gas provided from the measurement space at a set flow rate; and a verification block predicting an actual flow rate of the process gas based on the pressure and temperature of the process gas measured through the pressure sensor and the temperature sensor, and comparing the predicted actual flow rate of the process gas with the set flow rate of the flow controller. Therefore, the present invention is capable of preventing a defective semiconductor device.
반도체 장치의 성능 진단 시스템 및 그 구동 방법에 관한 기술이다. 개시된 반도체 장치의 성능 진단 시스템은, 측정 공간내에 수용된 공정 가스의 압력을 측정하는 압력 센서 및 상기 측정 공간내에 수용된 상기 공정 가스의 온도를 측정하는 온도 센서를 포함하는 센싱부; 상기 측정 공간으로부터 제공된 상기 공정 가스를 설정 유량으로 제어하여 출력하는 유량 제어기; 및 상기 압력 센서 및 상기 온도 센서를 통해 측정된 상기 공정 가스의 압력 및 온도에 기초하여 상기 공정 가스의 실제 유량을 예측하고, 예측된 상기 공정 가스의 실제 유량과 상기 유량 제어기의 설정 유량을 비교하는 검증 블록을 포함한다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIgJriwuSc1VSMsvUkjJTEzPyy_OzEtXCEgtAorkJuYlpyr4pykEp-ZmJufnpZQmlwDVORYUJBYllpQWKyTmpSj4ppZk5KeADXApyiwD6Q7JSFUITsxN5WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8d5BRgZGxgYGluZGFuaOxsSpAgBshDwq</recordid><startdate>20230703</startdate><enddate>20230703</enddate><creator>JI HYEON PARK</creator><creator>JEONG WOO YEOM</creator><creator>SEON HO KO</creator><creator>SANG MIN WOO</creator><creator>HYE SEON LEE</creator><creator>CHI WON AHN</creator><creator>TAE SUB NOH</creator><creator>BYEOUNG GEUN SON</creator><creator>DEOK GYU PARK</creator><creator>SEUNG JAE YANG</creator><scope>EVB</scope></search><sort><creationdate>20230703</creationdate><title>System for diagnosing Performance Of Semiconductor Apparatus and Method for Driving The Same</title><author>JI HYEON PARK ; JEONG WOO YEOM ; SEON HO KO ; SANG MIN WOO ; HYE SEON LEE ; CHI WON AHN ; TAE SUB NOH ; BYEOUNG GEUN SON ; DEOK GYU PARK ; SEUNG JAE YANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20230097287A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>JI HYEON PARK</creatorcontrib><creatorcontrib>JEONG WOO YEOM</creatorcontrib><creatorcontrib>SEON HO KO</creatorcontrib><creatorcontrib>SANG MIN WOO</creatorcontrib><creatorcontrib>HYE SEON LEE</creatorcontrib><creatorcontrib>CHI WON AHN</creatorcontrib><creatorcontrib>TAE SUB NOH</creatorcontrib><creatorcontrib>BYEOUNG GEUN SON</creatorcontrib><creatorcontrib>DEOK GYU PARK</creatorcontrib><creatorcontrib>SEUNG JAE YANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JI HYEON PARK</au><au>JEONG WOO YEOM</au><au>SEON HO KO</au><au>SANG MIN WOO</au><au>HYE SEON LEE</au><au>CHI WON AHN</au><au>TAE SUB NOH</au><au>BYEOUNG GEUN SON</au><au>DEOK GYU PARK</au><au>SEUNG JAE YANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>System for diagnosing Performance Of Semiconductor Apparatus and Method for Driving The Same</title><date>2023-07-03</date><risdate>2023</risdate><abstract>The present invention relates to a performance diagnosis system for a semiconductor device and a driving method thereof. The performance diagnosis system for a semiconductor device includes: a sensing unit including a pressure sensor for measuring pressure of process gas stored in a measurement space and a temperature sensor for measuring the temperature of the process gas stored in the measurement space; a flow controller controlling and outputting the process gas provided from the measurement space at a set flow rate; and a verification block predicting an actual flow rate of the process gas based on the pressure and temperature of the process gas measured through the pressure sensor and the temperature sensor, and comparing the predicted actual flow rate of the process gas with the set flow rate of the flow controller. Therefore, the present invention is capable of preventing a defective semiconductor device.
반도체 장치의 성능 진단 시스템 및 그 구동 방법에 관한 기술이다. 개시된 반도체 장치의 성능 진단 시스템은, 측정 공간내에 수용된 공정 가스의 압력을 측정하는 압력 센서 및 상기 측정 공간내에 수용된 상기 공정 가스의 온도를 측정하는 온도 센서를 포함하는 센싱부; 상기 측정 공간으로부터 제공된 상기 공정 가스를 설정 유량으로 제어하여 출력하는 유량 제어기; 및 상기 압력 센서 및 상기 온도 센서를 통해 측정된 상기 공정 가스의 압력 및 온도에 기초하여 상기 공정 가스의 실제 유량을 예측하고, 예측된 상기 공정 가스의 실제 유량과 상기 유량 제어기의 설정 유량을 비교하는 검증 블록을 포함한다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | System for diagnosing Performance Of Semiconductor Apparatus and Method for Driving The Same |
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