원자층 퇴적법용 박막 형성 원료 및 박막의 제조 방법
하기 일반식 (1) 로 나타내는 이트륨 화합물을 함유하는 원자층 퇴적법용 박막 형성 원료. [화학식 1] TIFFpct00014.tif4762 (식 중, R1 은 탄소 원자수 3 ∼ 8 의 제 2 급 알킬기를 나타내고, R2 는 탄소 원자수 4 ∼ 8 의 제 3 급 알킬기를 나타내며, R3 은 수소 원자 또는 탄소 원자수 1 ∼ 5 의 제 1 급, 제 2 급 혹은 제 3 급 알킬기를 나타낸다.) Provided is a thin-film forming raw material, which is used in an atomic laye...
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| creator | HATASE MASAKO MITSUI CHIAKI |
| description | 하기 일반식 (1) 로 나타내는 이트륨 화합물을 함유하는 원자층 퇴적법용 박막 형성 원료. [화학식 1] TIFFpct00014.tif4762 (식 중, R1 은 탄소 원자수 3 ∼ 8 의 제 2 급 알킬기를 나타내고, R2 는 탄소 원자수 4 ∼ 8 의 제 3 급 알킬기를 나타내며, R3 은 수소 원자 또는 탄소 원자수 1 ∼ 5 의 제 1 급, 제 2 급 혹은 제 3 급 알킬기를 나타낸다.)
Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an yttrium compound represented by the following general formula (1):where R1 represents a secondary alkyl group having 3 to 8 carbon atoms, R2 represents a tertiary alkyl group having 4 to 8 carbon atoms, and R3 represents a hydrogen atom, or a primary, secondary, or tertiary alkyl group having 1 to 5 carbon atoms. |
| format | Patent |
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Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an yttrium compound represented by the following general formula (1):where R1 represents a secondary alkyl group having 3 to 8 carbon atoms, R2 represents a tertiary alkyl group having 4 to 8 carbon atoms, and R3 represents a hydrogen atom, or a primary, secondary, or tertiary alkyl group having 1 to 5 carbon atoms.</description><language>kor</language><subject>ACYCLIC OR CARBOCYCLIC COMPOUNDS ; ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; ORGANIC CHEMISTRY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230518&DB=EPODOC&CC=KR&NR=20230069155A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230518&DB=EPODOC&CC=KR&NR=20230069155A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HATASE MASAKO</creatorcontrib><creatorcontrib>MITSUI CHIAKI</creatorcontrib><title>원자층 퇴적법용 박막 형성 원료 및 박막의 제조 방법</title><description>하기 일반식 (1) 로 나타내는 이트륨 화합물을 함유하는 원자층 퇴적법용 박막 형성 원료. [화학식 1] TIFFpct00014.tif4762 (식 중, R1 은 탄소 원자수 3 ∼ 8 의 제 2 급 알킬기를 나타내고, R2 는 탄소 원자수 4 ∼ 8 의 제 3 급 알킬기를 나타내며, R3 은 수소 원자 또는 탄소 원자수 1 ∼ 5 의 제 1 급, 제 2 급 혹은 제 3 급 알킬기를 나타낸다.)
Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an yttrium compound represented by the following general formula (1):where R1 represents a secondary alkyl group having 3 to 8 carbon atoms, R2 represents a tertiary alkyl group having 4 to 8 carbon atoms, and R3 represents a hydrogen atom, or a primary, secondary, or tertiary alkyl group having 1 to 5 carbon atoms.</description><subject>ACYCLIC OR CARBOCYCLIC COMPOUNDS</subject><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>ORGANIC CHEMISTRY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB_M3vCm3kT3uzYqvC2fcubBY2vN019M2ulwusNU18v71R4O2Pqm5aNCkBFrxf3AAX7oRJv5s5QeLNgzpuFG4ACK4F6eBhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJvHeQkYGRsYGBmaWhqamjMXGqAA9KSFQ</recordid><startdate>20230518</startdate><enddate>20230518</enddate><creator>HATASE MASAKO</creator><creator>MITSUI CHIAKI</creator><scope>EVB</scope></search><sort><creationdate>20230518</creationdate><title>원자층 퇴적법용 박막 형성 원료 및 박막의 제조 방법</title><author>HATASE MASAKO ; MITSUI CHIAKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20230069155A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>kor</language><creationdate>2023</creationdate><topic>ACYCLIC OR CARBOCYCLIC COMPOUNDS</topic><topic>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>ORGANIC CHEMISTRY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>HATASE MASAKO</creatorcontrib><creatorcontrib>MITSUI CHIAKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HATASE MASAKO</au><au>MITSUI CHIAKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>원자층 퇴적법용 박막 형성 원료 및 박막의 제조 방법</title><date>2023-05-18</date><risdate>2023</risdate><abstract>하기 일반식 (1) 로 나타내는 이트륨 화합물을 함유하는 원자층 퇴적법용 박막 형성 원료. [화학식 1] TIFFpct00014.tif4762 (식 중, R1 은 탄소 원자수 3 ∼ 8 의 제 2 급 알킬기를 나타내고, R2 는 탄소 원자수 4 ∼ 8 의 제 3 급 알킬기를 나타내며, R3 은 수소 원자 또는 탄소 원자수 1 ∼ 5 의 제 1 급, 제 2 급 혹은 제 3 급 알킬기를 나타낸다.)
Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an yttrium compound represented by the following general formula (1):where R1 represents a secondary alkyl group having 3 to 8 carbon atoms, R2 represents a tertiary alkyl group having 4 to 8 carbon atoms, and R3 represents a hydrogen atom, or a primary, secondary, or tertiary alkyl group having 1 to 5 carbon atoms.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ACYCLIC OR CARBOCYCLIC COMPOUNDS ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | 원자층 퇴적법용 박막 형성 원료 및 박막의 제조 방법 |
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