TUNGSTEN SILICIDE TARGET AND METHOD FOR MANUFACTURING SAME AND METHOD FOR MANUFACTURING TUNGSTEN SILICIDE FILM

스퍼터 성막 시에 파티클의 발생을 효율적으로 억제하는 텅스텐 실리사이드 타깃을 제공한다. WSi2상과 Si상의 2상 구조를 갖는 텅스텐 실리사이드 타깃이며, 원자비에 있어서의 조성식이 WSix(단, X＞2.0임)로 표기되고, 스퍼터면을 관찰하였을 때, 상기 Si상을 구성하는 Si 입자의 총 면적 S1에 대한, 당해 Si 입자 1개당 면적이 63.6㎛2 이상인 상기 Si 입자의 총 면적 I1의 비(I1/S1)가 5％ 이하이고, 항절 강도의 와이블 계수가 2.1 이상이다. Provided is a tungsten silicide tar...

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Bibliographische Detailangaben
Hauptverfasser:	DASAI TAKAFUMI, ASANO TAKAYUKI, OKABE TAKEO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CASTING CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY MAKING METALLIC POWDER MANUFACTURE OF ARTICLES FROM METALLIC POWDER METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS POWDER METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS WORKING METALLIC POWDER
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