저온 플루오르화를 갖는 금속 옥사이드
플라즈마 프로세싱 챔버에서 사용하기 위한 컴포넌트를 제공하는 방법이 제공되고, 컴포넌트는 플라즈마 대면 표면을 갖는다. 금속 옥사이드 층은 컴포넌트의 플라즈마 대면 표면 상에 제공된다. 금속 옥사이드 층은 적어도 0.1 bar의 분압에서 적어도 2 시간 동안 600 ℃ 미만의 온도로 불소 함유 가스에 노출된다. A method for providing a component for using in a plasma processing chamber is provided, wherein the component has a plasma f...
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| creator | PAPE ERIC A KOSHY ROBIN |
| description | 플라즈마 프로세싱 챔버에서 사용하기 위한 컴포넌트를 제공하는 방법이 제공되고, 컴포넌트는 플라즈마 대면 표면을 갖는다. 금속 옥사이드 층은 컴포넌트의 플라즈마 대면 표면 상에 제공된다. 금속 옥사이드 층은 적어도 0.1 bar의 분압에서 적어도 2 시간 동안 600 ℃ 미만의 온도로 불소 함유 가스에 노출된다.
A method for providing a component for using in a plasma processing chamber is provided, wherein the component has a plasma facing surface. A metal oxide layer is provided on the plasma facing surface of the component. The metal oxide layer is exposed to a fluorine containing gas at a temperature of less than 600° C. for at least 2 hours at a partial pressure of at least 0.1 bar. |
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A method for providing a component for using in a plasma processing chamber is provided, wherein the component has a plasma facing surface. A metal oxide layer is provided on the plasma facing surface of the component. The metal oxide layer is exposed to a fluorine containing gas at a temperature of less than 600° C. for at least 2 hours at a partial pressure of at least 0.1 bar.</description><language>kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230330&DB=EPODOC&CC=KR&NR=20230043198A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230330&DB=EPODOC&CC=KR&NR=20230043198A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PAPE ERIC A</creatorcontrib><creatorcontrib>KOSHY ROBIN</creatorcontrib><title>저온 플루오르화를 갖는 금속 옥사이드</title><description>플라즈마 프로세싱 챔버에서 사용하기 위한 컴포넌트를 제공하는 방법이 제공되고, 컴포넌트는 플라즈마 대면 표면을 갖는다. 금속 옥사이드 층은 컴포넌트의 플라즈마 대면 표면 상에 제공된다. 금속 옥사이드 층은 적어도 0.1 bar의 분압에서 적어도 2 시간 동안 600 ℃ 미만의 온도로 불소 함유 가스에 노출된다.
A method for providing a component for using in a plasma processing chamber is provided, wherein the component has a plasma facing surface. A metal oxide layer is provided on the plasma facing surface of the component. The metal oxide layer is exposed to a fluorine containing gas at a temperature of less than 600° C. for at least 2 hours at a partial pressure of at least 0.1 bar.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB5s6DhzYwVCm-n9LxevOLNjCWvl255O3PK66V7FF5tmPa6a4rCqx0db9p6Fd7MWPqmac2buVteT57Dw8CalphTnMoLpbkZlN1cQ5w9dFML8uNTiwsSk1PzUkvivYOMDIyMDQxMjA0tLRyNiVMFAOe0PMA</recordid><startdate>20230330</startdate><enddate>20230330</enddate><creator>PAPE ERIC A</creator><creator>KOSHY ROBIN</creator><scope>EVB</scope></search><sort><creationdate>20230330</creationdate><title>저온 플루오르화를 갖는 금속 옥사이드</title><author>PAPE ERIC A ; KOSHY ROBIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20230043198A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>kor</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>PAPE ERIC A</creatorcontrib><creatorcontrib>KOSHY ROBIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PAPE ERIC A</au><au>KOSHY ROBIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>저온 플루오르화를 갖는 금속 옥사이드</title><date>2023-03-30</date><risdate>2023</risdate><abstract>플라즈마 프로세싱 챔버에서 사용하기 위한 컴포넌트를 제공하는 방법이 제공되고, 컴포넌트는 플라즈마 대면 표면을 갖는다. 금속 옥사이드 층은 컴포넌트의 플라즈마 대면 표면 상에 제공된다. 금속 옥사이드 층은 적어도 0.1 bar의 분압에서 적어도 2 시간 동안 600 ℃ 미만의 온도로 불소 함유 가스에 노출된다.
A method for providing a component for using in a plasma processing chamber is provided, wherein the component has a plasma facing surface. A metal oxide layer is provided on the plasma facing surface of the component. The metal oxide layer is exposed to a fluorine containing gas at a temperature of less than 600° C. for at least 2 hours at a partial pressure of at least 0.1 bar.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | 저온 플루오르화를 갖는 금속 옥사이드 |
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