SUPPRESSING INTERFACIAL REACTIONS BY VARYING WAFER TEMPERATURE THROUGHOUT DEPOSITION

Disclosed are methods, apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods can include the steps of: (a) providing a substrate to a first station of the apparatus; (b) adjusting the temperature of the substrate to a first temperature; (c) depositing a f...

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Bibliographische Detailangaben
Hauptverfasser:	CHANDRASEKHARAN RAMESH, FELLIS AARON R, MCKERROW ANDREW JOHN, SIMS JAMES SAMUEL, HENRI JON, VARADARAJAN SESHASAYEE
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Disclosed are methods, apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods can include the steps of: (a) providing a substrate to a first station of the apparatus; (b) adjusting the temperature of the substrate to a first temperature; (c) depositing a first portion of a material on the substrate while the substrate is at the first temperature in the first station; (d) transferring the substrate to a second station; (e) adjusting the temperature of the substrate to a second temperature; and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems can include the multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f). 멀티-스테이션 증착 장치에서 막을 증착하기 위한 방법들 및 장치들 및 시스템들이 개시된다. 방법들은: (a) 장치의 제 1 스테이션으로 기판을 제공하는 단계, (b) 제 1 온도로 기판의 온도를 조정하는 단계, (c) 기판이 제 1 스테이션에서 제 1 온도로 있는 동안 기판 상에 재료의 제 1 부분을 증착하는 단계, (d) 제 2 스테이션으로 기판을 이송하는 단계, (e) 제 2 온도로 기판의 온도를 조정하는 단계, 및 (f) 제 1 부분 및 제 2 부분이 상이한 값들의 재료의 특성을 나타내도록 기판이 제 2 온도로 있는 동안 기판 상에 재료의 제 2 부분을 증착하는 단계를 포함할 수도 있다. 장치들 및 시스템들은 멀티-스테이션 증착 장치 및 단계 (a) 내지 단계 (f) 중 하나 이상을 수행하기 위한 제어 로직을 갖는 제어기를 포함할 수도 있다.