RESIST UNDERLAYER COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION
The present invention relates to: a resist underlayer composition including a polymer containing a structural unit represented by chemical formula 1, a structural unit represented by chemical formula 2 or a combination thereof, and a structural unit represented by chemical formula 3, and a solvent;...
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| creator | KWON SOONHYUNG CHUN MINKI BAEK JAEYEOL KIM MINSOO PARK HYEON JIN HWAYOUNG KIM SEONG JIN NAMGUNG RAN CHOI YOOJEONG SONG DAESEOK |
| description | The present invention relates to: a resist underlayer composition including a polymer containing a structural unit represented by chemical formula 1, a structural unit represented by chemical formula 2 or a combination thereof, and a structural unit represented by chemical formula 3, and a solvent; and a method for forming a pattern using the resist underlayer composition. The resist underlayer composition according to the present invention can be advantageously utilized for the formation of a fine pattern in a photoresist using a high-energy light source such as EUV light.
하기 화학식 1로 표시되는 구조단위, 하기 화학식 2로 표시되는 구조단위, 또는 이들의 조합과, 하기 화학식 3으로 표시되는 구조단위를 포함하는 공중합체 및 용매를 포함하는 레지스트 하층막용 조성물; 그리고 상기 레지스트 하층막용 조성물을 이용하는 패턴형성방법에 관한 것이다: [화학식 1] JPEGpat00043.jpg39103 [화학식 2] JPEGpat00044.jpg55106 [화학식 3] JPEGpat00045.jpg5545 상기 화학식 1 내지 3의 정의는 명세서 내에 기재한 바와 같다. |
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하기 화학식 1로 표시되는 구조단위, 하기 화학식 2로 표시되는 구조단위, 또는 이들의 조합과, 하기 화학식 3으로 표시되는 구조단위를 포함하는 공중합체 및 용매를 포함하는 레지스트 하층막용 조성물; 그리고 상기 레지스트 하층막용 조성물을 이용하는 패턴형성방법에 관한 것이다: [화학식 1] JPEGpat00043.jpg39103 [화학식 2] JPEGpat00044.jpg55106 [화학식 3] JPEGpat00045.jpg5545 상기 화학식 1 내지 3의 정의는 명세서 내에 기재한 바와 같다.</description><language>eng ; kor</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CHEMISTRY ; CINEMATOGRAPHY ; COMPOSITIONS BASED THEREON ; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ; ELECTROGRAPHY ; HOLOGRAPHY ; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS ; MATERIALS THEREFOR ; METALLURGY ; ORGANIC MACROMOLECULAR COMPOUNDS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221222&DB=EPODOC&CC=KR&NR=20220168011A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221222&DB=EPODOC&CC=KR&NR=20220168011A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KWON SOONHYUNG</creatorcontrib><creatorcontrib>CHUN MINKI</creatorcontrib><creatorcontrib>BAEK JAEYEOL</creatorcontrib><creatorcontrib>KIM MINSOO</creatorcontrib><creatorcontrib>PARK HYEON</creatorcontrib><creatorcontrib>JIN HWAYOUNG</creatorcontrib><creatorcontrib>KIM SEONG JIN</creatorcontrib><creatorcontrib>NAMGUNG RAN</creatorcontrib><creatorcontrib>CHOI YOOJEONG</creatorcontrib><creatorcontrib>SONG DAESEOK</creatorcontrib><title>RESIST UNDERLAYER COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION</title><description>The present invention relates to: a resist underlayer composition including a polymer containing a structural unit represented by chemical formula 1, a structural unit represented by chemical formula 2 or a combination thereof, and a structural unit represented by chemical formula 3, and a solvent; and a method for forming a pattern using the resist underlayer composition. The resist underlayer composition according to the present invention can be advantageously utilized for the formation of a fine pattern in a photoresist using a high-energy light source such as EUV light.
하기 화학식 1로 표시되는 구조단위, 하기 화학식 2로 표시되는 구조단위, 또는 이들의 조합과, 하기 화학식 3으로 표시되는 구조단위를 포함하는 공중합체 및 용매를 포함하는 레지스트 하층막용 조성물; 그리고 상기 레지스트 하층막용 조성물을 이용하는 패턴형성방법에 관한 것이다: [화학식 1] JPEGpat00043.jpg39103 [화학식 2] JPEGpat00044.jpg55106 [화학식 3] JPEGpat00045.jpg5545 상기 화학식 1 내지 3의 정의는 명세서 내에 기재한 바와 같다.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>COMPOSITIONS OF MACROMOLECULAR COMPOUNDS</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgKcg32DA5RCPVzcQ3ycYx0DVJw9vcN8A_2DPH091Nw9HNR8HUN8fB3UfB3U3DzD_L19HNXCHAMCXEN8gtWCA0GcUM8XJE18TCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSSeO8gIwMjIwNDMwsDQ0NHY-JUAQDJFzDT</recordid><startdate>20221222</startdate><enddate>20221222</enddate><creator>KWON SOONHYUNG</creator><creator>CHUN MINKI</creator><creator>BAEK JAEYEOL</creator><creator>KIM MINSOO</creator><creator>PARK HYEON</creator><creator>JIN HWAYOUNG</creator><creator>KIM SEONG JIN</creator><creator>NAMGUNG RAN</creator><creator>CHOI YOOJEONG</creator><creator>SONG DAESEOK</creator><scope>EVB</scope></search><sort><creationdate>20221222</creationdate><title>RESIST UNDERLAYER COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION</title><author>KWON SOONHYUNG ; CHUN MINKI ; BAEK JAEYEOL ; KIM MINSOO ; PARK HYEON ; JIN HWAYOUNG ; KIM SEONG JIN ; NAMGUNG RAN ; CHOI YOOJEONG ; SONG DAESEOK</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20220168011A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2022</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>COMPOSITIONS OF MACROMOLECULAR COMPOUNDS</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><toplevel>online_resources</toplevel><creatorcontrib>KWON SOONHYUNG</creatorcontrib><creatorcontrib>CHUN MINKI</creatorcontrib><creatorcontrib>BAEK JAEYEOL</creatorcontrib><creatorcontrib>KIM MINSOO</creatorcontrib><creatorcontrib>PARK HYEON</creatorcontrib><creatorcontrib>JIN HWAYOUNG</creatorcontrib><creatorcontrib>KIM SEONG JIN</creatorcontrib><creatorcontrib>NAMGUNG RAN</creatorcontrib><creatorcontrib>CHOI YOOJEONG</creatorcontrib><creatorcontrib>SONG DAESEOK</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KWON SOONHYUNG</au><au>CHUN MINKI</au><au>BAEK JAEYEOL</au><au>KIM MINSOO</au><au>PARK HYEON</au><au>JIN HWAYOUNG</au><au>KIM SEONG JIN</au><au>NAMGUNG RAN</au><au>CHOI YOOJEONG</au><au>SONG DAESEOK</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RESIST UNDERLAYER COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION</title><date>2022-12-22</date><risdate>2022</risdate><abstract>The present invention relates to: a resist underlayer composition including a polymer containing a structural unit represented by chemical formula 1, a structural unit represented by chemical formula 2 or a combination thereof, and a structural unit represented by chemical formula 3, and a solvent; and a method for forming a pattern using the resist underlayer composition. The resist underlayer composition according to the present invention can be advantageously utilized for the formation of a fine pattern in a photoresist using a high-energy light source such as EUV light.
하기 화학식 1로 표시되는 구조단위, 하기 화학식 2로 표시되는 구조단위, 또는 이들의 조합과, 하기 화학식 3으로 표시되는 구조단위를 포함하는 공중합체 및 용매를 포함하는 레지스트 하층막용 조성물; 그리고 상기 레지스트 하층막용 조성물을 이용하는 패턴형성방법에 관한 것이다: [화학식 1] JPEGpat00043.jpg39103 [화학식 2] JPEGpat00044.jpg55106 [화학식 3] JPEGpat00045.jpg5545 상기 화학식 1 내지 3의 정의는 명세서 내에 기재한 바와 같다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP |
| title | RESIST UNDERLAYER COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION |
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