Inductively coupled plasma processing apparatus
The present invention relates to an inductively coupled plasma processing apparatus. The present invention discloses an inductively coupled plasma processing apparatus comprising: a chamber main body (100) having a rectangular planar shape and including an opening part formed on an upper side; a win...
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| creator | YOO KWANG JONG ROH DUK HEE KI DONG HYUN KIM JEONG SOO HAN CHANG HOON KIM WOO HYUN KIM YOUNG PIL |
| description | The present invention relates to an inductively coupled plasma processing apparatus. The present invention discloses an inductively coupled plasma processing apparatus comprising: a chamber main body (100) having a rectangular planar shape and including an opening part formed on an upper side; a window assembly body (200) including one or more windows (210) covering the opening part to form a processing space (S) together with the chamber main body (100) and a support frame (220) supporting the windows (210); a substrate support part (300) installed in the chamber main body (100) and supporting the rectangular substrate (10); a gas injection unit which injects gas to the processing space (S); and an antenna unit (500) which is installed in a reference rectangular region corresponding to the rectangular shape of the substrate (10) on an upper portion of the window assembly body (200) and forms an induced electric field in the processing space (S). The antenna unit (500) includes: four corner antenna groups (520) disposed adjacent to vertices of the reference rectangular region to control plasma densities at corner portions; and side antenna groups (510) disposed to be distanced from sides of the reference rectangular region and the four corner antenna groups (520). According to the present invention, plasma control is possibly carried out on the corner portions so that the uniformity of substrate processing can be improved.
본 발명은 유도결합 플라즈마 처리장치에 관한 것이다. 본 발명은, 평면형상이 직사각형 형상을 가지며, 상측에 개구부가 형성된 챔버본체(100)와; 상기 챔버본체(100)와 함께 처리공간(S)을 형성하도록 상기 개구부를 복개하는 하나 이상의 윈도우(210)와, 상기 윈도우(210)를 지지하는 지지프레임(220)을 포함하는 윈도우조립체(200)와; 상기 챔버본체(100)에 설치되어 직사각형 기판(10)을 지지하는 기판지지부(300)와; 상기 처리공간(S)으로 가스를 분사하는 가스분사부와; 상기 윈도우조립체(200)의 상부에 상기 기판(10)의 직사각형 형상에 대응되는 기준 직사각형 영역에 설치되어 상기 처리공간(S)에 유도전계를 형성하는 안테나부(500)를 포함하며, 상기 안테나부(500)는, 상기 기준 직사각형 영역의 꼭지점에 인접하여 배치되어 코너 부분의 플라즈마 밀도를 제어하는 4개의 코너 안테나군(520)과; 상기 기준 직사각형 영역의 변 및 상기 4개의 코너 안테나군(520)과 간격을 두고 배치되는 측방 안테나군(510)을 포함하는 것을 특징으로 하는 유도전계 플라즈마 처리장치를 개시한다. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20220151461A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20220151461A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20220151461A3</originalsourceid><addsrcrecordid>eNrjZND3zEspTS7JLEvNqVRIzi8tyElNUSjISSzOTVQoKMpPTi0uzsxLV0gsKEgsSiwpLeZhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGRkYGhqaGJmaGjsbEqQIAJXQsag</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Inductively coupled plasma processing apparatus</title><source>esp@cenet</source><creator>YOO KWANG JONG ; ROH DUK HEE ; KI DONG HYUN ; KIM JEONG SOO ; HAN CHANG HOON ; KIM WOO HYUN ; KIM YOUNG PIL</creator><creatorcontrib>YOO KWANG JONG ; ROH DUK HEE ; KI DONG HYUN ; KIM JEONG SOO ; HAN CHANG HOON ; KIM WOO HYUN ; KIM YOUNG PIL</creatorcontrib><description>The present invention relates to an inductively coupled plasma processing apparatus. The present invention discloses an inductively coupled plasma processing apparatus comprising: a chamber main body (100) having a rectangular planar shape and including an opening part formed on an upper side; a window assembly body (200) including one or more windows (210) covering the opening part to form a processing space (S) together with the chamber main body (100) and a support frame (220) supporting the windows (210); a substrate support part (300) installed in the chamber main body (100) and supporting the rectangular substrate (10); a gas injection unit which injects gas to the processing space (S); and an antenna unit (500) which is installed in a reference rectangular region corresponding to the rectangular shape of the substrate (10) on an upper portion of the window assembly body (200) and forms an induced electric field in the processing space (S). The antenna unit (500) includes: four corner antenna groups (520) disposed adjacent to vertices of the reference rectangular region to control plasma densities at corner portions; and side antenna groups (510) disposed to be distanced from sides of the reference rectangular region and the four corner antenna groups (520). According to the present invention, plasma control is possibly carried out on the corner portions so that the uniformity of substrate processing can be improved.
본 발명은 유도결합 플라즈마 처리장치에 관한 것이다. 본 발명은, 평면형상이 직사각형 형상을 가지며, 상측에 개구부가 형성된 챔버본체(100)와; 상기 챔버본체(100)와 함께 처리공간(S)을 형성하도록 상기 개구부를 복개하는 하나 이상의 윈도우(210)와, 상기 윈도우(210)를 지지하는 지지프레임(220)을 포함하는 윈도우조립체(200)와; 상기 챔버본체(100)에 설치되어 직사각형 기판(10)을 지지하는 기판지지부(300)와; 상기 처리공간(S)으로 가스를 분사하는 가스분사부와; 상기 윈도우조립체(200)의 상부에 상기 기판(10)의 직사각형 형상에 대응되는 기준 직사각형 영역에 설치되어 상기 처리공간(S)에 유도전계를 형성하는 안테나부(500)를 포함하며, 상기 안테나부(500)는, 상기 기준 직사각형 영역의 꼭지점에 인접하여 배치되어 코너 부분의 플라즈마 밀도를 제어하는 4개의 코너 안테나군(520)과; 상기 기준 직사각형 영역의 변 및 상기 4개의 코너 안테나군(520)과 간격을 두고 배치되는 측방 안테나군(510)을 포함하는 것을 특징으로 하는 유도전계 플라즈마 처리장치를 개시한다.</description><language>eng ; kor</language><subject>ANTENNAS, i.e. RADIO AERIALS ; BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221115&DB=EPODOC&CC=KR&NR=20220151461A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221115&DB=EPODOC&CC=KR&NR=20220151461A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOO KWANG JONG</creatorcontrib><creatorcontrib>ROH DUK HEE</creatorcontrib><creatorcontrib>KI DONG HYUN</creatorcontrib><creatorcontrib>KIM JEONG SOO</creatorcontrib><creatorcontrib>HAN CHANG HOON</creatorcontrib><creatorcontrib>KIM WOO HYUN</creatorcontrib><creatorcontrib>KIM YOUNG PIL</creatorcontrib><title>Inductively coupled plasma processing apparatus</title><description>The present invention relates to an inductively coupled plasma processing apparatus. The present invention discloses an inductively coupled plasma processing apparatus comprising: a chamber main body (100) having a rectangular planar shape and including an opening part formed on an upper side; a window assembly body (200) including one or more windows (210) covering the opening part to form a processing space (S) together with the chamber main body (100) and a support frame (220) supporting the windows (210); a substrate support part (300) installed in the chamber main body (100) and supporting the rectangular substrate (10); a gas injection unit which injects gas to the processing space (S); and an antenna unit (500) which is installed in a reference rectangular region corresponding to the rectangular shape of the substrate (10) on an upper portion of the window assembly body (200) and forms an induced electric field in the processing space (S). The antenna unit (500) includes: four corner antenna groups (520) disposed adjacent to vertices of the reference rectangular region to control plasma densities at corner portions; and side antenna groups (510) disposed to be distanced from sides of the reference rectangular region and the four corner antenna groups (520). According to the present invention, plasma control is possibly carried out on the corner portions so that the uniformity of substrate processing can be improved.
본 발명은 유도결합 플라즈마 처리장치에 관한 것이다. 본 발명은, 평면형상이 직사각형 형상을 가지며, 상측에 개구부가 형성된 챔버본체(100)와; 상기 챔버본체(100)와 함께 처리공간(S)을 형성하도록 상기 개구부를 복개하는 하나 이상의 윈도우(210)와, 상기 윈도우(210)를 지지하는 지지프레임(220)을 포함하는 윈도우조립체(200)와; 상기 챔버본체(100)에 설치되어 직사각형 기판(10)을 지지하는 기판지지부(300)와; 상기 처리공간(S)으로 가스를 분사하는 가스분사부와; 상기 윈도우조립체(200)의 상부에 상기 기판(10)의 직사각형 형상에 대응되는 기준 직사각형 영역에 설치되어 상기 처리공간(S)에 유도전계를 형성하는 안테나부(500)를 포함하며, 상기 안테나부(500)는, 상기 기준 직사각형 영역의 꼭지점에 인접하여 배치되어 코너 부분의 플라즈마 밀도를 제어하는 4개의 코너 안테나군(520)과; 상기 기준 직사각형 영역의 변 및 상기 4개의 코너 안테나군(520)과 간격을 두고 배치되는 측방 안테나군(510)을 포함하는 것을 특징으로 하는 유도전계 플라즈마 처리장치를 개시한다.</description><subject>ANTENNAS, i.e. RADIO AERIALS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND3zEspTS7JLEvNqVRIzi8tyElNUSjISSzOTVQoKMpPTi0uzsxLV0gsKEgsSiwpLeZhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGRkYGhqaGJmaGjsbEqQIAJXQsag</recordid><startdate>20221115</startdate><enddate>20221115</enddate><creator>YOO KWANG JONG</creator><creator>ROH DUK HEE</creator><creator>KI DONG HYUN</creator><creator>KIM JEONG SOO</creator><creator>HAN CHANG HOON</creator><creator>KIM WOO HYUN</creator><creator>KIM YOUNG PIL</creator><scope>EVB</scope></search><sort><creationdate>20221115</creationdate><title>Inductively coupled plasma processing apparatus</title><author>YOO KWANG JONG ; ROH DUK HEE ; KI DONG HYUN ; KIM JEONG SOO ; HAN CHANG HOON ; KIM WOO HYUN ; KIM YOUNG PIL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20220151461A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2022</creationdate><topic>ANTENNAS, i.e. RADIO AERIALS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><toplevel>online_resources</toplevel><creatorcontrib>YOO KWANG JONG</creatorcontrib><creatorcontrib>ROH DUK HEE</creatorcontrib><creatorcontrib>KI DONG HYUN</creatorcontrib><creatorcontrib>KIM JEONG SOO</creatorcontrib><creatorcontrib>HAN CHANG HOON</creatorcontrib><creatorcontrib>KIM WOO HYUN</creatorcontrib><creatorcontrib>KIM YOUNG PIL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOO KWANG JONG</au><au>ROH DUK HEE</au><au>KI DONG HYUN</au><au>KIM JEONG SOO</au><au>HAN CHANG HOON</au><au>KIM WOO HYUN</au><au>KIM YOUNG PIL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Inductively coupled plasma processing apparatus</title><date>2022-11-15</date><risdate>2022</risdate><abstract>The present invention relates to an inductively coupled plasma processing apparatus. The present invention discloses an inductively coupled plasma processing apparatus comprising: a chamber main body (100) having a rectangular planar shape and including an opening part formed on an upper side; a window assembly body (200) including one or more windows (210) covering the opening part to form a processing space (S) together with the chamber main body (100) and a support frame (220) supporting the windows (210); a substrate support part (300) installed in the chamber main body (100) and supporting the rectangular substrate (10); a gas injection unit which injects gas to the processing space (S); and an antenna unit (500) which is installed in a reference rectangular region corresponding to the rectangular shape of the substrate (10) on an upper portion of the window assembly body (200) and forms an induced electric field in the processing space (S). The antenna unit (500) includes: four corner antenna groups (520) disposed adjacent to vertices of the reference rectangular region to control plasma densities at corner portions; and side antenna groups (510) disposed to be distanced from sides of the reference rectangular region and the four corner antenna groups (520). According to the present invention, plasma control is possibly carried out on the corner portions so that the uniformity of substrate processing can be improved.
본 발명은 유도결합 플라즈마 처리장치에 관한 것이다. 본 발명은, 평면형상이 직사각형 형상을 가지며, 상측에 개구부가 형성된 챔버본체(100)와; 상기 챔버본체(100)와 함께 처리공간(S)을 형성하도록 상기 개구부를 복개하는 하나 이상의 윈도우(210)와, 상기 윈도우(210)를 지지하는 지지프레임(220)을 포함하는 윈도우조립체(200)와; 상기 챔버본체(100)에 설치되어 직사각형 기판(10)을 지지하는 기판지지부(300)와; 상기 처리공간(S)으로 가스를 분사하는 가스분사부와; 상기 윈도우조립체(200)의 상부에 상기 기판(10)의 직사각형 형상에 대응되는 기준 직사각형 영역에 설치되어 상기 처리공간(S)에 유도전계를 형성하는 안테나부(500)를 포함하며, 상기 안테나부(500)는, 상기 기준 직사각형 영역의 꼭지점에 인접하여 배치되어 코너 부분의 플라즈마 밀도를 제어하는 4개의 코너 안테나군(520)과; 상기 기준 직사각형 영역의 변 및 상기 4개의 코너 안테나군(520)과 간격을 두고 배치되는 측방 안테나군(510)을 포함하는 것을 특징으로 하는 유도전계 플라즈마 처리장치를 개시한다.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Inductively coupled plasma processing apparatus |
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