프로세스 챔버의 인 시츄 (in situ) 표면 코팅

반응기 시스템은 프로세스 챔버, 가스 유입구 및 디스펜서 (dispenser) 를 포함한다. 디스펜서는 가스 유입구에 커플링된다 (couple). 디스펜서는 바이알 (vial) 로부터 가스 유입구로의 가스 플로우를 제어한다. 바이알은 반응 시스템의 동작 조건들 하에서 프로세스 챔버 내에 방출될 때, 프로세스 챔버의 내측 벽을 코팅하는 코팅 재료를 포함한다. A reactor system comprises a process chamber, a gas inlet, and a dispenser. The dispenser is couple...

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Hauptverfasser:	MARTIN KEITH JOSEPH, LEESER KARL FREDERICK, BAILEY CURTIS W, WOMACK JEFFREY, BRUENING RIGEL MARTIN, LINEBARGER NICK RAY JR
Format:	Patent
Sprache:	kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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creator	MARTIN KEITH JOSEPH LEESER KARL FREDERICK BAILEY CURTIS W WOMACK JEFFREY BRUENING RIGEL MARTIN LINEBARGER NICK RAY JR
description	반응기 시스템은 프로세스 챔버, 가스 유입구 및 디스펜서 (dispenser) 를 포함한다. 디스펜서는 가스 유입구에 커플링된다 (couple). 디스펜서는 바이알 (vial) 로부터 가스 유입구로의 가스 플로우를 제어한다. 바이알은 반응 시스템의 동작 조건들 하에서 프로세스 챔버 내에 방출될 때, 프로세스 챔버의 내측 벽을 코팅하는 코팅 재료를 포함한다. A reactor system comprises a process chamber, a gas inlet, and a dispenser. The dispenser is coupled to the gas inlet. The dispenser controls a gas flow from a vial to the gas inlet. The vial includes a coating material that, when released inside the process chamber under operating conditions of the reaction system, coats an inner wall of the process chamber.
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A reactor system comprises a process chamber, a gas inlet, and a dispenser. The dispenser is coupled to the gas inlet. The dispenser controls a gas flow from a vial to the gas inlet. 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A reactor system comprises a process chamber, a gas inlet, and a dispenser. The dispenser is coupled to the gas inlet. The dispenser controls a gas flow from a vial to the gas inlet. 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A reactor system comprises a process chamber, a gas inlet, and a dispenser. The dispenser is coupled to the gas inlet. The dispenser controls a gas flow from a vial to the gas inlet. The vial includes a coating material that, when released inside the process chamber under operating conditions of the reaction system, coats an inner wall of the process chamber.</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title	프로세스 챔버의 인 시츄 (in situ) 표면 코팅
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