Phase Shift Blankmask and Photomask for EUV lithography

A blank mask for EUV lithography comprises: a substrate; a reflective film; a capping film; an etch stop film; and a phase shift film, wherein the etch stop film is made of a material including molybdenum (Mo), silicon (Si), and nitrogen (N). The etch stop film is formed of a silicon compound includ...

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Bibliographische Detailangaben
Hauptverfasser:	PARK MIN KWANG, YANG CHUL KYU, SHIN CHEOL
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Zusammenfassung:	A blank mask for EUV lithography comprises: a substrate; a reflective film; a capping film; an etch stop film; and a phase shift film, wherein the etch stop film is made of a material including molybdenum (Mo), silicon (Si), and nitrogen (N). The etch stop film is formed of a silicon compound including molybdenum (Mo) so that the repair speed can be improved during E-beam repair. EUV 리소그래피용 블랭크마스크는, 기판, 반사막, 캡핑막, 식각저지막, 및 위상반전막을 구비하며, 식각저지막은 몰리브데늄(Mo), 실리콘(Si), 및 질소(N)를 포함하는 물질로 형성된다. 식각저지막이 몰리브데늄(Mo)을 포함한 실리콘 화합물로 형성되므로, E-beam Repair 시 Repair 속도를 향상시킬 수 있다.