Phase Shift Blankmask and Photomask for EUV lithography
A blank mask for EUV includes a reflective film formed on a substrate and a phase shift film formed on the reflective film. The phase shift film is made of a material containing ruthenium (Ru) and chromium (Cr). The phase shift film has a relative reflectance of 3 to 30 %, a phase reversal of 170 to...
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| creator | LEE JONG HWA YANG CHUL KYU SHIN CHEOL |
| description | A blank mask for EUV includes a reflective film formed on a substrate and a phase shift film formed on the reflective film. The phase shift film is made of a material containing ruthenium (Ru) and chromium (Cr). The phase shift film has a relative reflectance of 3 to 30 %, a phase reversal of 170 to 220 degrees, and surface roughness of 0.5 nmRMS or less. Excellent resolution can be obtained by using a photomask manufactured using the blank mask when a pattern of 7 nm or less is finally produced.
EUV 용 블랭크마스크는 기판 상에 형성된 반사막 및 반사막 상에 형성된 위상반전막을 구비한다. 위상반전막은 루테늄(Ru) 및 크롬(Cr)을 포함하는 물질로 형성된다. 위상반전막은 3~30% 의 상대반사율을 가지고, 170~220°의 위상반전량을 가지며, 0.5nmRMS 이하의 표면 거칠기를 갖는다. 이러한 블랭크마스크를 이용하여 제작된 포토마스크를 이용하여, 최종적으로 7nm 이하의 패턴 제작 시 우수한 해상도(Resolution)을 얻을 수 있다. |
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EUV 용 블랭크마스크는 기판 상에 형성된 반사막 및 반사막 상에 형성된 위상반전막을 구비한다. 위상반전막은 루테늄(Ru) 및 크롬(Cr)을 포함하는 물질로 형성된다. 위상반전막은 3~30% 의 상대반사율을 가지고, 170~220°의 위상반전량을 가지며, 0.5nmRMS 이하의 표면 거칠기를 갖는다. 이러한 블랭크마스크를 이용하여 제작된 포토마스크를 이용하여, 최종적으로 7nm 이하의 패턴 제작 시 우수한 해상도(Resolution)을 얻을 수 있다.</description><language>eng ; kor</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220803&DB=EPODOC&CC=KR&NR=20220108686A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220803&DB=EPODOC&CC=KR&NR=20220108686A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE JONG HWA</creatorcontrib><creatorcontrib>YANG CHUL KYU</creatorcontrib><creatorcontrib>SHIN CHEOL</creatorcontrib><title>Phase Shift Blankmask and Photomask for EUV lithography</title><description>A blank mask for EUV includes a reflective film formed on a substrate and a phase shift film formed on the reflective film. The phase shift film is made of a material containing ruthenium (Ru) and chromium (Cr). The phase shift film has a relative reflectance of 3 to 30 %, a phase reversal of 170 to 220 degrees, and surface roughness of 0.5 nmRMS or less. Excellent resolution can be obtained by using a photomask manufactured using the blank mask when a pattern of 7 nm or less is finally produced.
EUV 용 블랭크마스크는 기판 상에 형성된 반사막 및 반사막 상에 형성된 위상반전막을 구비한다. 위상반전막은 루테늄(Ru) 및 크롬(Cr)을 포함하는 물질로 형성된다. 위상반전막은 3~30% 의 상대반사율을 가지고, 170~220°의 위상반전량을 가지며, 0.5nmRMS 이하의 표면 거칠기를 갖는다. 이러한 블랭크마스크를 이용하여 제작된 포토마스크를 이용하여, 최종적으로 7nm 이하의 패턴 제작 시 우수한 해상도(Resolution)을 얻을 수 있다.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAPyEgsTlUIzshMK1FwyknMy85NLM5WSMxLUQjIyC_JB_PS8osUXEPDFHIySzLy04sSCzIqeRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJvHeQkYGRkYGhgYWZhZmjMXGqADbiLi4</recordid><startdate>20220803</startdate><enddate>20220803</enddate><creator>LEE JONG HWA</creator><creator>YANG CHUL KYU</creator><creator>SHIN CHEOL</creator><scope>EVB</scope></search><sort><creationdate>20220803</creationdate><title>Phase Shift Blankmask and Photomask for EUV lithography</title><author>LEE JONG HWA ; YANG CHUL KYU ; SHIN CHEOL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20220108686A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2022</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE JONG HWA</creatorcontrib><creatorcontrib>YANG CHUL KYU</creatorcontrib><creatorcontrib>SHIN CHEOL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE JONG HWA</au><au>YANG CHUL KYU</au><au>SHIN CHEOL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Phase Shift Blankmask and Photomask for EUV lithography</title><date>2022-08-03</date><risdate>2022</risdate><abstract>A blank mask for EUV includes a reflective film formed on a substrate and a phase shift film formed on the reflective film. The phase shift film is made of a material containing ruthenium (Ru) and chromium (Cr). The phase shift film has a relative reflectance of 3 to 30 %, a phase reversal of 170 to 220 degrees, and surface roughness of 0.5 nmRMS or less. Excellent resolution can be obtained by using a photomask manufactured using the blank mask when a pattern of 7 nm or less is finally produced.
EUV 용 블랭크마스크는 기판 상에 형성된 반사막 및 반사막 상에 형성된 위상반전막을 구비한다. 위상반전막은 루테늄(Ru) 및 크롬(Cr)을 포함하는 물질로 형성된다. 위상반전막은 3~30% 의 상대반사율을 가지고, 170~220°의 위상반전량을 가지며, 0.5nmRMS 이하의 표면 거칠기를 갖는다. 이러한 블랭크마스크를 이용하여 제작된 포토마스크를 이용하여, 최종적으로 7nm 이하의 패턴 제작 시 우수한 해상도(Resolution)을 얻을 수 있다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | Phase Shift Blankmask and Photomask for EUV lithography |
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