WAFER PLACEMENT AND GAP CONTROL OPTIMIZATION THROUGH IN SITU FEEDBACK
프로세스 픽스처와 서셉터 사이의 치수 제어 및 모니터링, 및 웨이퍼들의 위치 결정의 장치 및 방법들이 설명된다. Apparatus and methods of dimension control and monitoring between a processes fixture and a susceptor, and position determination of wafers are described....
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| creator | GRIFFIN KEVIN KHANDELWAL SOMESH RAVID ABRAHAM YUDOVSKY JOSEPH EGAN TODD MINKOVICH ALEX |
| description | 프로세스 픽스처와 서셉터 사이의 치수 제어 및 모니터링, 및 웨이퍼들의 위치 결정의 장치 및 방법들이 설명된다.
Apparatus and methods of dimension control and monitoring between a processes fixture and a susceptor, and position determination of wafers are described. |
| format | Patent |
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Apparatus and methods of dimension control and monitoring between a processes fixture and a susceptor, and position determination of wafers are described.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHANd3RzDVII8HF0dvV19QtRcPRzUXB3DFBw9vcLCfL3UfAPCPH09YxyDPH091MI8QjyD3X3UPD0Uwj2DAlVcHN1dXFydPbmYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx3kFGBkZGBgYWFsaWJo7GxKkCACaeLNc</recordid><startdate>20220627</startdate><enddate>20220627</enddate><creator>GRIFFIN KEVIN</creator><creator>KHANDELWAL SOMESH</creator><creator>RAVID ABRAHAM</creator><creator>YUDOVSKY JOSEPH</creator><creator>EGAN TODD</creator><creator>MINKOVICH ALEX</creator><scope>EVB</scope></search><sort><creationdate>20220627</creationdate><title>WAFER PLACEMENT AND GAP CONTROL OPTIMIZATION THROUGH IN SITU FEEDBACK</title><author>GRIFFIN KEVIN ; KHANDELWAL SOMESH ; RAVID ABRAHAM ; YUDOVSKY JOSEPH ; EGAN TODD ; MINKOVICH ALEX</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20220088394A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>GRIFFIN KEVIN</creatorcontrib><creatorcontrib>KHANDELWAL SOMESH</creatorcontrib><creatorcontrib>RAVID ABRAHAM</creatorcontrib><creatorcontrib>YUDOVSKY JOSEPH</creatorcontrib><creatorcontrib>EGAN TODD</creatorcontrib><creatorcontrib>MINKOVICH ALEX</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GRIFFIN KEVIN</au><au>KHANDELWAL SOMESH</au><au>RAVID ABRAHAM</au><au>YUDOVSKY JOSEPH</au><au>EGAN TODD</au><au>MINKOVICH ALEX</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>WAFER PLACEMENT AND GAP CONTROL OPTIMIZATION THROUGH IN SITU FEEDBACK</title><date>2022-06-27</date><risdate>2022</risdate><abstract>프로세스 픽스처와 서셉터 사이의 치수 제어 및 모니터링, 및 웨이퍼들의 위치 결정의 장치 및 방법들이 설명된다.
Apparatus and methods of dimension control and monitoring between a processes fixture and a susceptor, and position determination of wafers are described.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; kor |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | WAFER PLACEMENT AND GAP CONTROL OPTIMIZATION THROUGH IN SITU FEEDBACK |
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