Fixture and Method for Determining Position of a Target in a Reaction Chamber
고정구는 프레임, 레벨링 플레이트, 브라켓, 및 레이저 프로파일러를 포함한다. 프레임은 기판 상에 막을 증착하도록 배열된 반응 챔버 위에 고정되도록 배열된다. 레벨링 플레이트는 프레임 상에서 지지된다. 브라켓은 레벨링 플레이트 상에서 지지된다. 레이저 프로파일러는 브라켓으로부터 매달리고, 반응 챔버 위에 놓이며, 레벨링 플레이트 및 프레임을 통해 연장된 시야를 가져 반응 챔버 내에서 타겟의 위치를 결정한다. 반도체 처리 시스템 및 반도체 처리 시스템 내의 반응 챔버 내에서 타겟의 위치를 결정하는 방법이 또한 설명된다. A fixtu...
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| creator | GAO PEIPEI LUAN SIYAO DEMOS ALEXANDROS PATIL KISHOR LIN XING |
| description | 고정구는 프레임, 레벨링 플레이트, 브라켓, 및 레이저 프로파일러를 포함한다. 프레임은 기판 상에 막을 증착하도록 배열된 반응 챔버 위에 고정되도록 배열된다. 레벨링 플레이트는 프레임 상에서 지지된다. 브라켓은 레벨링 플레이트 상에서 지지된다. 레이저 프로파일러는 브라켓으로부터 매달리고, 반응 챔버 위에 놓이며, 레벨링 플레이트 및 프레임을 통해 연장된 시야를 가져 반응 챔버 내에서 타겟의 위치를 결정한다. 반도체 처리 시스템 및 반도체 처리 시스템 내의 반응 챔버 내에서 타겟의 위치를 결정하는 방법이 또한 설명된다.
A fixture includes a frame, a leveling plate, a bracket, and a laser profiler. The frame is arranged for fixation above a reaction chamber arranged to deposit a film onto a substrate. The leveling plate is supported on the frame. The bracket is supported on the leveling plate. The laser profiler is suspended from the bracket, overlays the reaction chamber, and has a field of view that extends through the leveling plate and the frame to determine position of a target within the reaction chamber. Semiconductor processing systems and methods of determining position of targets within reaction chambers in semiconductor processing systems are also described. |
| format | Patent |
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A fixture includes a frame, a leveling plate, a bracket, and a laser profiler. The frame is arranged for fixation above a reaction chamber arranged to deposit a film onto a substrate. The leveling plate is supported on the frame. The bracket is supported on the leveling plate. The laser profiler is suspended from the bracket, overlays the reaction chamber, and has a field of view that extends through the leveling plate and the frame to determine position of a target within the reaction chamber. Semiconductor processing systems and methods of determining position of targets within reaction chambers in semiconductor processing systems are also described.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; METALLURGY ; PHYSICS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TESTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220623&DB=EPODOC&CC=KR&NR=20220086494A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220623&DB=EPODOC&CC=KR&NR=20220086494A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GAO PEIPEI</creatorcontrib><creatorcontrib>LUAN SIYAO</creatorcontrib><creatorcontrib>DEMOS ALEXANDROS</creatorcontrib><creatorcontrib>PATIL KISHOR</creatorcontrib><creatorcontrib>LIN XING</creatorcontrib><title>Fixture and Method for Determining Position of a Target in a Reaction Chamber</title><description>고정구는 프레임, 레벨링 플레이트, 브라켓, 및 레이저 프로파일러를 포함한다. 프레임은 기판 상에 막을 증착하도록 배열된 반응 챔버 위에 고정되도록 배열된다. 레벨링 플레이트는 프레임 상에서 지지된다. 브라켓은 레벨링 플레이트 상에서 지지된다. 레이저 프로파일러는 브라켓으로부터 매달리고, 반응 챔버 위에 놓이며, 레벨링 플레이트 및 프레임을 통해 연장된 시야를 가져 반응 챔버 내에서 타겟의 위치를 결정한다. 반도체 처리 시스템 및 반도체 처리 시스템 내의 반응 챔버 내에서 타겟의 위치를 결정하는 방법이 또한 설명된다.
A fixture includes a frame, a leveling plate, a bracket, and a laser profiler. The frame is arranged for fixation above a reaction chamber arranged to deposit a film onto a substrate. The leveling plate is supported on the frame. The bracket is supported on the leveling plate. The laser profiler is suspended from the bracket, overlays the reaction chamber, and has a field of view that extends through the leveling plate and the frame to determine position of a target within the reaction chamber. Semiconductor processing systems and methods of determining position of targets within reaction chambers in semiconductor processing systems are also described.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>METALLURGY</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPB1y6woKS1KVUjMS1HwTS3JyE9RSMsvUnBJLUktys3My8xLVwjIL84syczPU8hPU0hUCEksSk8tUcjMA7KDUhOTwTLOGYm5SalFPAysaYk5xam8UJqbQdnNNcTZQze1ID8-tbggMTk1L7Uk3jvIyMDIyMDAwszE0sTRmDhVACD2NeM</recordid><startdate>20220623</startdate><enddate>20220623</enddate><creator>GAO PEIPEI</creator><creator>LUAN SIYAO</creator><creator>DEMOS ALEXANDROS</creator><creator>PATIL KISHOR</creator><creator>LIN XING</creator><scope>EVB</scope></search><sort><creationdate>20220623</creationdate><title>Fixture and Method for Determining Position of a Target in a Reaction Chamber</title><author>GAO PEIPEI ; LUAN SIYAO ; DEMOS ALEXANDROS ; PATIL KISHOR ; LIN XING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20220086494A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>METALLURGY</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>GAO PEIPEI</creatorcontrib><creatorcontrib>LUAN SIYAO</creatorcontrib><creatorcontrib>DEMOS ALEXANDROS</creatorcontrib><creatorcontrib>PATIL KISHOR</creatorcontrib><creatorcontrib>LIN XING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GAO PEIPEI</au><au>LUAN SIYAO</au><au>DEMOS ALEXANDROS</au><au>PATIL KISHOR</au><au>LIN XING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Fixture and Method for Determining Position of a Target in a Reaction Chamber</title><date>2022-06-23</date><risdate>2022</risdate><abstract>고정구는 프레임, 레벨링 플레이트, 브라켓, 및 레이저 프로파일러를 포함한다. 프레임은 기판 상에 막을 증착하도록 배열된 반응 챔버 위에 고정되도록 배열된다. 레벨링 플레이트는 프레임 상에서 지지된다. 브라켓은 레벨링 플레이트 상에서 지지된다. 레이저 프로파일러는 브라켓으로부터 매달리고, 반응 챔버 위에 놓이며, 레벨링 플레이트 및 프레임을 통해 연장된 시야를 가져 반응 챔버 내에서 타겟의 위치를 결정한다. 반도체 처리 시스템 및 반도체 처리 시스템 내의 반응 챔버 내에서 타겟의 위치를 결정하는 방법이 또한 설명된다.
A fixture includes a frame, a leveling plate, a bracket, and a laser profiler. The frame is arranged for fixation above a reaction chamber arranged to deposit a film onto a substrate. The leveling plate is supported on the frame. The bracket is supported on the leveling plate. The laser profiler is suspended from the bracket, overlays the reaction chamber, and has a field of view that extends through the leveling plate and the frame to determine position of a target within the reaction chamber. Semiconductor processing systems and methods of determining position of targets within reaction chambers in semiconductor processing systems are also described.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS METALLURGY PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING |
| title | Fixture and Method for Determining Position of a Target in a Reaction Chamber |
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