LIQUID COATING METHOD LIQUID COATING APPARATUS AND COMPUTER-READABLE STORAGE MEDIUM
An objective of the present invention is to achieve excellent uniformity of a film thickness of a coating film formed on the surface of a substrate. A liquid coating method comprises: a step of spirally coating a coating liquid on a surface (Wa) of a wafer (W) by discharging the coating liquid from...
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creator | TASHIRO KAZUYUKI ICHINO KATSUNORI ISHII TAKAYUKI KAWAHARA KOUZOU SIMOKAWA DAISUKE |
description | An objective of the present invention is to achieve excellent uniformity of a film thickness of a coating film formed on the surface of a substrate. A liquid coating method comprises: a step of spirally coating a coating liquid on a surface (Wa) of a wafer (W) by discharging the coating liquid from a nozzle (N) while moving the nozzle (N) in a predetermined direction along the surface (Wa) of the wafer (W) between a rotating axis of the wafer (W) and a peripheral portion of the wafer (W) during the rotation of the wafer (W); a step of making a linear velocity at a discharge position approximately constant by reducing the number of rotations of the wafer (W) as the discharge position of the coating liquid from the nozzle (N) on the surface (Wa) of the wafer (W) is located toward the peripheral portion of the wafer (W); and a step of making a discharge flow rate of the coating liquid discharged from the nozzle (N) approximately constant by changing a gap between a discharge port of the nozzle (N) and the surface (Wa) of the wafer (W) based on the flow rate of the coating liquid before being discharged from the nozzle (N).
(과제) 기판의 표면에 형성되는 도포막의 막두께의 더 나은 균일화를 도모한다. (해결 수단) 액 도포 방법은, 웨이퍼(W)의 회전 중에, 웨이퍼(W)의 회전축과 웨이퍼(W)의 주연부 사이에서 웨이퍼(W)의 표면(Wa)을 따르는 소정의 방향으로 노즐(N)을 이동시키면서, 도포액을 노즐(N)로부터 토출함으로써, 웨이퍼(W)의 표면(Wa)에서 도포액을 스파이럴형으로 도포하는 공정과, 웨이퍼(W)의 표면(Wa) 중 노즐(N)로부터의 도포액의 토출 위치가 웨이퍼(W)의 주연부측에 위치할수록 웨이퍼(W)의 회전수를 작게 함으로써, 토출 위치에서의 선속도를 대략 일정하게 하는 공정과, 노즐(N)로부터 토출되기 전의 도포액의 유량에 기초하여 노즐(N)의 토출구와 웨이퍼(W)의 표면(Wa)의 갭을 변화시킴으로써, 노즐(N)로부터 토출되는 도포액의 토출 유량을 대략 일정한 크기로 하는 공정을 행한다. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20220069898A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20220069898A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20220069898A3</originalsourceid><addsrcrecordid>eNrjZAj28QwM9XRRcPZ3DPH0c1fwdQ3x8HdRQBN1DAhwDHIMCQ1WcPQDifoGhIa4BukGuTq6ODr5uCoEh_gHObq7AnW7eIb68jCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSSeO8gIwMjIwMDM0sLSwtHY-JUAQC_szDT</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>LIQUID COATING METHOD LIQUID COATING APPARATUS AND COMPUTER-READABLE STORAGE MEDIUM</title><source>esp@cenet</source><creator>TASHIRO KAZUYUKI ; ICHINO KATSUNORI ; ISHII TAKAYUKI ; KAWAHARA KOUZOU ; SIMOKAWA DAISUKE</creator><creatorcontrib>TASHIRO KAZUYUKI ; ICHINO KATSUNORI ; ISHII TAKAYUKI ; KAWAHARA KOUZOU ; SIMOKAWA DAISUKE</creatorcontrib><description>An objective of the present invention is to achieve excellent uniformity of a film thickness of a coating film formed on the surface of a substrate. A liquid coating method comprises: a step of spirally coating a coating liquid on a surface (Wa) of a wafer (W) by discharging the coating liquid from a nozzle (N) while moving the nozzle (N) in a predetermined direction along the surface (Wa) of the wafer (W) between a rotating axis of the wafer (W) and a peripheral portion of the wafer (W) during the rotation of the wafer (W); a step of making a linear velocity at a discharge position approximately constant by reducing the number of rotations of the wafer (W) as the discharge position of the coating liquid from the nozzle (N) on the surface (Wa) of the wafer (W) is located toward the peripheral portion of the wafer (W); and a step of making a discharge flow rate of the coating liquid discharged from the nozzle (N) approximately constant by changing a gap between a discharge port of the nozzle (N) and the surface (Wa) of the wafer (W) based on the flow rate of the coating liquid before being discharged from the nozzle (N).
(과제) 기판의 표면에 형성되는 도포막의 막두께의 더 나은 균일화를 도모한다. (해결 수단) 액 도포 방법은, 웨이퍼(W)의 회전 중에, 웨이퍼(W)의 회전축과 웨이퍼(W)의 주연부 사이에서 웨이퍼(W)의 표면(Wa)을 따르는 소정의 방향으로 노즐(N)을 이동시키면서, 도포액을 노즐(N)로부터 토출함으로써, 웨이퍼(W)의 표면(Wa)에서 도포액을 스파이럴형으로 도포하는 공정과, 웨이퍼(W)의 표면(Wa) 중 노즐(N)로부터의 도포액의 토출 위치가 웨이퍼(W)의 주연부측에 위치할수록 웨이퍼(W)의 회전수를 작게 함으로써, 토출 위치에서의 선속도를 대략 일정하게 하는 공정과, 노즐(N)로부터 토출되기 전의 도포액의 유량에 기초하여 노즐(N)의 토출구와 웨이퍼(W)의 표면(Wa)의 갭을 변화시킴으로써, 노즐(N)로부터 토출되는 도포액의 토출 유량을 대략 일정한 크기로 하는 공정을 행한다.</description><language>eng ; kor</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PERFORMING OPERATIONS ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL ; SEMICONDUCTOR DEVICES ; SPRAYING OR ATOMISING IN GENERAL ; TRANSPORTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220527&DB=EPODOC&CC=KR&NR=20220069898A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220527&DB=EPODOC&CC=KR&NR=20220069898A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TASHIRO KAZUYUKI</creatorcontrib><creatorcontrib>ICHINO KATSUNORI</creatorcontrib><creatorcontrib>ISHII TAKAYUKI</creatorcontrib><creatorcontrib>KAWAHARA KOUZOU</creatorcontrib><creatorcontrib>SIMOKAWA DAISUKE</creatorcontrib><title>LIQUID COATING METHOD LIQUID COATING APPARATUS AND COMPUTER-READABLE STORAGE MEDIUM</title><description>An objective of the present invention is to achieve excellent uniformity of a film thickness of a coating film formed on the surface of a substrate. A liquid coating method comprises: a step of spirally coating a coating liquid on a surface (Wa) of a wafer (W) by discharging the coating liquid from a nozzle (N) while moving the nozzle (N) in a predetermined direction along the surface (Wa) of the wafer (W) between a rotating axis of the wafer (W) and a peripheral portion of the wafer (W) during the rotation of the wafer (W); a step of making a linear velocity at a discharge position approximately constant by reducing the number of rotations of the wafer (W) as the discharge position of the coating liquid from the nozzle (N) on the surface (Wa) of the wafer (W) is located toward the peripheral portion of the wafer (W); and a step of making a discharge flow rate of the coating liquid discharged from the nozzle (N) approximately constant by changing a gap between a discharge port of the nozzle (N) and the surface (Wa) of the wafer (W) based on the flow rate of the coating liquid before being discharged from the nozzle (N).
(과제) 기판의 표면에 형성되는 도포막의 막두께의 더 나은 균일화를 도모한다. (해결 수단) 액 도포 방법은, 웨이퍼(W)의 회전 중에, 웨이퍼(W)의 회전축과 웨이퍼(W)의 주연부 사이에서 웨이퍼(W)의 표면(Wa)을 따르는 소정의 방향으로 노즐(N)을 이동시키면서, 도포액을 노즐(N)로부터 토출함으로써, 웨이퍼(W)의 표면(Wa)에서 도포액을 스파이럴형으로 도포하는 공정과, 웨이퍼(W)의 표면(Wa) 중 노즐(N)로부터의 도포액의 토출 위치가 웨이퍼(W)의 주연부측에 위치할수록 웨이퍼(W)의 회전수를 작게 함으로써, 토출 위치에서의 선속도를 대략 일정하게 하는 공정과, 노즐(N)로부터 토출되기 전의 도포액의 유량에 기초하여 노즐(N)의 토출구와 웨이퍼(W)의 표면(Wa)의 갭을 변화시킴으로써, 노즐(N)로부터 토출되는 도포액의 토출 유량을 대략 일정한 크기로 하는 공정을 행한다.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PERFORMING OPERATIONS</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPRAYING OR ATOMISING IN GENERAL</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAj28QwM9XRRcPZ3DPH0c1fwdQ3x8HdRQBN1DAhwDHIMCQ1WcPQDifoGhIa4BukGuTq6ODr5uCoEh_gHObq7AnW7eIb68jCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSSeO8gIwMjIwMDM0sLSwtHY-JUAQC_szDT</recordid><startdate>20220527</startdate><enddate>20220527</enddate><creator>TASHIRO KAZUYUKI</creator><creator>ICHINO KATSUNORI</creator><creator>ISHII TAKAYUKI</creator><creator>KAWAHARA KOUZOU</creator><creator>SIMOKAWA DAISUKE</creator><scope>EVB</scope></search><sort><creationdate>20220527</creationdate><title>LIQUID COATING METHOD LIQUID COATING APPARATUS AND COMPUTER-READABLE STORAGE MEDIUM</title><author>TASHIRO KAZUYUKI ; ICHINO KATSUNORI ; ISHII TAKAYUKI ; KAWAHARA KOUZOU ; SIMOKAWA DAISUKE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20220069898A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2022</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PERFORMING OPERATIONS</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPRAYING OR ATOMISING IN GENERAL</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>TASHIRO KAZUYUKI</creatorcontrib><creatorcontrib>ICHINO KATSUNORI</creatorcontrib><creatorcontrib>ISHII TAKAYUKI</creatorcontrib><creatorcontrib>KAWAHARA KOUZOU</creatorcontrib><creatorcontrib>SIMOKAWA DAISUKE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TASHIRO KAZUYUKI</au><au>ICHINO KATSUNORI</au><au>ISHII TAKAYUKI</au><au>KAWAHARA KOUZOU</au><au>SIMOKAWA DAISUKE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LIQUID COATING METHOD LIQUID COATING APPARATUS AND COMPUTER-READABLE STORAGE MEDIUM</title><date>2022-05-27</date><risdate>2022</risdate><abstract>An objective of the present invention is to achieve excellent uniformity of a film thickness of a coating film formed on the surface of a substrate. A liquid coating method comprises: a step of spirally coating a coating liquid on a surface (Wa) of a wafer (W) by discharging the coating liquid from a nozzle (N) while moving the nozzle (N) in a predetermined direction along the surface (Wa) of the wafer (W) between a rotating axis of the wafer (W) and a peripheral portion of the wafer (W) during the rotation of the wafer (W); a step of making a linear velocity at a discharge position approximately constant by reducing the number of rotations of the wafer (W) as the discharge position of the coating liquid from the nozzle (N) on the surface (Wa) of the wafer (W) is located toward the peripheral portion of the wafer (W); and a step of making a discharge flow rate of the coating liquid discharged from the nozzle (N) approximately constant by changing a gap between a discharge port of the nozzle (N) and the surface (Wa) of the wafer (W) based on the flow rate of the coating liquid before being discharged from the nozzle (N).
(과제) 기판의 표면에 형성되는 도포막의 막두께의 더 나은 균일화를 도모한다. (해결 수단) 액 도포 방법은, 웨이퍼(W)의 회전 중에, 웨이퍼(W)의 회전축과 웨이퍼(W)의 주연부 사이에서 웨이퍼(W)의 표면(Wa)을 따르는 소정의 방향으로 노즐(N)을 이동시키면서, 도포액을 노즐(N)로부터 토출함으로써, 웨이퍼(W)의 표면(Wa)에서 도포액을 스파이럴형으로 도포하는 공정과, 웨이퍼(W)의 표면(Wa) 중 노즐(N)로부터의 도포액의 토출 위치가 웨이퍼(W)의 주연부측에 위치할수록 웨이퍼(W)의 회전수를 작게 함으로써, 토출 위치에서의 선속도를 대략 일정하게 하는 공정과, 노즐(N)로부터 토출되기 전의 도포액의 유량에 기초하여 노즐(N)의 토출구와 웨이퍼(W)의 표면(Wa)의 갭을 변화시킴으로써, 노즐(N)로부터 토출되는 도포액의 토출 유량을 대략 일정한 크기로 하는 공정을 행한다.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | APPARATUS SPECIALLY ADAPTED THEREFOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL TRANSPORTING |
title | LIQUID COATING METHOD LIQUID COATING APPARATUS AND COMPUTER-READABLE STORAGE MEDIUM |
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