Etching method for vertical structure formation miniature device and method for manufacturing of miniature device applying the same
Disclosed is an etching method for forming a vertical structure. According to the disclosed etching method, a mask, where an opening pattern having a first edge and a second edge mutually forming an angle is formed and a correction pattern is further formed at a corner portion where the first edge a...
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| creator | RHEE, CHOONG HO YOON, YONG SEOP KANG, SUNG CHAN |
| description | Disclosed is an etching method for forming a vertical structure. According to the disclosed etching method, a mask, where an opening pattern having a first edge and a second edge mutually forming an angle is formed and a correction pattern is further formed at a corner portion where the first edge and the second edge meet, is positioned on a substrate, and a vertical structure is formed on the substrate through a dry etching process through the opening pattern of the mask. The correction pattern can be a concave correction pattern more recessed than one edge between the first edge and the second edge.
수직 구조물 형성을 위한 식각 방법이 개시된다. 개시된 식각 방법에 따르면, 서로 각을 이루는 제1변 및 제2변을 가지는 오프닝 패턴이 형성되고, 제1변 및 제2변이 만나는 코너 부분에 보정 패턴을 더 포함하는 마스크를 기판 상에 위치시키고, 마스크의 오프닝 패턴을 통해 건식 식각 공정으로 기판에 수직 구조물을 형성한다. 보정 패턴은 제1변 및 제2변 중 어느 한 변보다 인입된 오목 보정 패턴일 수 있다. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20220066729A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20220066729A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20220066729A3</originalsourceid><addsrcrecordid>eNqNjD0LAjEQRK-xEPU_LFgLR4QTS5ETwU7sjyXZmEC-SPYOrP3jErGwsLAaeDNv5s2zZ2lsuIMnNlGBjhkmymwlOiicR8ljpoo9so0BvA0W30zRZCUBBvUtewyjxmrV16h_CCm5Ry3ZEBT0tGxmGl2h1ScXzfrU347nDaU4UEkoKRAPl6tohWjbrtuJ_WH73-oF6xlMHQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Etching method for vertical structure formation miniature device and method for manufacturing of miniature device applying the same</title><source>esp@cenet</source><creator>RHEE, CHOONG HO ; YOON, YONG SEOP ; KANG, SUNG CHAN</creator><creatorcontrib>RHEE, CHOONG HO ; YOON, YONG SEOP ; KANG, SUNG CHAN</creatorcontrib><description>Disclosed is an etching method for forming a vertical structure. According to the disclosed etching method, a mask, where an opening pattern having a first edge and a second edge mutually forming an angle is formed and a correction pattern is further formed at a corner portion where the first edge and the second edge meet, is positioned on a substrate, and a vertical structure is formed on the substrate through a dry etching process through the opening pattern of the mask. The correction pattern can be a concave correction pattern more recessed than one edge between the first edge and the second edge.
수직 구조물 형성을 위한 식각 방법이 개시된다. 개시된 식각 방법에 따르면, 서로 각을 이루는 제1변 및 제2변을 가지는 오프닝 패턴이 형성되고, 제1변 및 제2변이 만나는 코너 부분에 보정 패턴을 더 포함하는 마스크를 기판 상에 위치시키고, 마스크의 오프닝 패턴을 통해 건식 식각 공정으로 기판에 수직 구조물을 형성한다. 보정 패턴은 제1변 및 제2변 중 어느 한 변보다 인입된 오목 보정 패턴일 수 있다.</description><language>eng ; kor</language><subject>ELECTRICITY ; MICROSTRUCTURAL TECHNOLOGY ; PERFORMING OPERATIONS ; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS ; TRANSPORTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220524&DB=EPODOC&CC=KR&NR=20220066729A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220524&DB=EPODOC&CC=KR&NR=20220066729A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RHEE, CHOONG HO</creatorcontrib><creatorcontrib>YOON, YONG SEOP</creatorcontrib><creatorcontrib>KANG, SUNG CHAN</creatorcontrib><title>Etching method for vertical structure formation miniature device and method for manufacturing of miniature device applying the same</title><description>Disclosed is an etching method for forming a vertical structure. According to the disclosed etching method, a mask, where an opening pattern having a first edge and a second edge mutually forming an angle is formed and a correction pattern is further formed at a corner portion where the first edge and the second edge meet, is positioned on a substrate, and a vertical structure is formed on the substrate through a dry etching process through the opening pattern of the mask. The correction pattern can be a concave correction pattern more recessed than one edge between the first edge and the second edge.
수직 구조물 형성을 위한 식각 방법이 개시된다. 개시된 식각 방법에 따르면, 서로 각을 이루는 제1변 및 제2변을 가지는 오프닝 패턴이 형성되고, 제1변 및 제2변이 만나는 코너 부분에 보정 패턴을 더 포함하는 마스크를 기판 상에 위치시키고, 마스크의 오프닝 패턴을 통해 건식 식각 공정으로 기판에 수직 구조물을 형성한다. 보정 패턴은 제1변 및 제2변 중 어느 한 변보다 인입된 오목 보정 패턴일 수 있다.</description><subject>ELECTRICITY</subject><subject>MICROSTRUCTURAL TECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjD0LAjEQRK-xEPU_LFgLR4QTS5ETwU7sjyXZmEC-SPYOrP3jErGwsLAaeDNv5s2zZ2lsuIMnNlGBjhkmymwlOiicR8ljpoo9so0BvA0W30zRZCUBBvUtewyjxmrV16h_CCm5Ry3ZEBT0tGxmGl2h1ScXzfrU347nDaU4UEkoKRAPl6tohWjbrtuJ_WH73-oF6xlMHQ</recordid><startdate>20220524</startdate><enddate>20220524</enddate><creator>RHEE, CHOONG HO</creator><creator>YOON, YONG SEOP</creator><creator>KANG, SUNG CHAN</creator><scope>EVB</scope></search><sort><creationdate>20220524</creationdate><title>Etching method for vertical structure formation miniature device and method for manufacturing of miniature device applying the same</title><author>RHEE, CHOONG HO ; YOON, YONG SEOP ; KANG, SUNG CHAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20220066729A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2022</creationdate><topic>ELECTRICITY</topic><topic>MICROSTRUCTURAL TECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>RHEE, CHOONG HO</creatorcontrib><creatorcontrib>YOON, YONG SEOP</creatorcontrib><creatorcontrib>KANG, SUNG CHAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RHEE, CHOONG HO</au><au>YOON, YONG SEOP</au><au>KANG, SUNG CHAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Etching method for vertical structure formation miniature device and method for manufacturing of miniature device applying the same</title><date>2022-05-24</date><risdate>2022</risdate><abstract>Disclosed is an etching method for forming a vertical structure. According to the disclosed etching method, a mask, where an opening pattern having a first edge and a second edge mutually forming an angle is formed and a correction pattern is further formed at a corner portion where the first edge and the second edge meet, is positioned on a substrate, and a vertical structure is formed on the substrate through a dry etching process through the opening pattern of the mask. The correction pattern can be a concave correction pattern more recessed than one edge between the first edge and the second edge.
수직 구조물 형성을 위한 식각 방법이 개시된다. 개시된 식각 방법에 따르면, 서로 각을 이루는 제1변 및 제2변을 가지는 오프닝 패턴이 형성되고, 제1변 및 제2변이 만나는 코너 부분에 보정 패턴을 더 포함하는 마스크를 기판 상에 위치시키고, 마스크의 오프닝 패턴을 통해 건식 식각 공정으로 기판에 수직 구조물을 형성한다. 보정 패턴은 제1변 및 제2변 중 어느 한 변보다 인입된 오목 보정 패턴일 수 있다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ELECTRICITY MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS TRANSPORTING |
| title | Etching method for vertical structure formation miniature device and method for manufacturing of miniature device applying the same |
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