프로세싱 챔버 표면들 또는 컴포넌트들 상에 보호 코팅을 형성하기 위한 방법들
본 개시내용의 실시예들은 프로세싱 챔버 표면들 및/또는 컴포넌트들, 이를테면 프로세싱 챔버 내의 플라즈마에 노출되는 표면들 상에 세륨 산화물을 함유하는 보호 코팅을 제작하거나 아니면 형성하기 위한 방법들을 제공한다. 하나 이상의 실시예들에서, 프로세싱 챔버 내에 보호 코팅을 형성하는 방법은 ALD(atomic layer deposition) 프로세스 동안 챔버 표면 또는 챔버 컴포넌트 상에 세륨 산화물 층을 증착하는 단계를 포함한다. ALD 프로세스는 ALD 사이클 동안, 챔버 표면 또는 챔버 컴포넌트를 세륨 전구체, 퍼지 가스,...
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creator | PAREEK YOGITA GORADIA PRERNA SONTHALIA KADAM ANKUR BAJAJ GEETIKA |
description | 본 개시내용의 실시예들은 프로세싱 챔버 표면들 및/또는 컴포넌트들, 이를테면 프로세싱 챔버 내의 플라즈마에 노출되는 표면들 상에 세륨 산화물을 함유하는 보호 코팅을 제작하거나 아니면 형성하기 위한 방법들을 제공한다. 하나 이상의 실시예들에서, 프로세싱 챔버 내에 보호 코팅을 형성하는 방법은 ALD(atomic layer deposition) 프로세스 동안 챔버 표면 또는 챔버 컴포넌트 상에 세륨 산화물 층을 증착하는 단계를 포함한다. ALD 프로세스는 ALD 사이클 동안, 챔버 표면 또는 챔버 컴포넌트를 세륨 전구체, 퍼지 가스, 산화제 및 퍼지 가스에 순차적으로 노출시키는 것, 그리고 세륨 산화물 층을 증착하기 위해 ALD 사이클을 반복하는 것을 포함한다.
Embodiments of the disclosure provide methods for fabricating or otherwise forming a protective coating containing cerium oxide on processing chamber surfaces and/or components, such as surfaces which are exposed to a plasma within a processing chamber. In one or more embodiments, a method of forming a protective coating within a processing chamber includes depositing a cerium oxide layer on a chamber surface or a chamber component during an atomic layer deposition (ALD) process. The ALD process includes sequentially exposing the chamber surface or the chamber component to a cerium precursor, a purge gas, an oxidizing agent, and the purge gas during an ALD cycle, and repeating the ALD cycle to deposit the cerium oxide layer. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20220057609A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20220057609A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20220057609A3</originalsourceid><addsrcrecordid>eNrjZMh6O6Xl9cI5b1p2vOneqPBm45TXm1oU3k6c83rllteTlyi8njHhddcUhTe7t7ztX_O6pedt1w6Q8JvmxjfTJyi83rzl7YwdCm_2Tnnb0_pmLlDjjKlvWja-nTrj1Y4NCm_mtLydOkfh9YaVrzdNBeriYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx3kFGBkZGBgam5mYGlo7GxKkCAK5eX_A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>프로세싱 챔버 표면들 또는 컴포넌트들 상에 보호 코팅을 형성하기 위한 방법들</title><source>esp@cenet</source><creator>PAREEK YOGITA ; GORADIA PRERNA SONTHALIA ; KADAM ANKUR ; BAJAJ GEETIKA</creator><creatorcontrib>PAREEK YOGITA ; GORADIA PRERNA SONTHALIA ; KADAM ANKUR ; BAJAJ GEETIKA</creatorcontrib><description>본 개시내용의 실시예들은 프로세싱 챔버 표면들 및/또는 컴포넌트들, 이를테면 프로세싱 챔버 내의 플라즈마에 노출되는 표면들 상에 세륨 산화물을 함유하는 보호 코팅을 제작하거나 아니면 형성하기 위한 방법들을 제공한다. 하나 이상의 실시예들에서, 프로세싱 챔버 내에 보호 코팅을 형성하는 방법은 ALD(atomic layer deposition) 프로세스 동안 챔버 표면 또는 챔버 컴포넌트 상에 세륨 산화물 층을 증착하는 단계를 포함한다. ALD 프로세스는 ALD 사이클 동안, 챔버 표면 또는 챔버 컴포넌트를 세륨 전구체, 퍼지 가스, 산화제 및 퍼지 가스에 순차적으로 노출시키는 것, 그리고 세륨 산화물 층을 증착하기 위해 ALD 사이클을 반복하는 것을 포함한다.
Embodiments of the disclosure provide methods for fabricating or otherwise forming a protective coating containing cerium oxide on processing chamber surfaces and/or components, such as surfaces which are exposed to a plasma within a processing chamber. In one or more embodiments, a method of forming a protective coating within a processing chamber includes depositing a cerium oxide layer on a chamber surface or a chamber component during an atomic layer deposition (ALD) process. The ALD process includes sequentially exposing the chamber surface or the chamber component to a cerium precursor, a purge gas, an oxidizing agent, and the purge gas during an ALD cycle, and repeating the ALD cycle to deposit the cerium oxide layer.</description><language>kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220509&DB=EPODOC&CC=KR&NR=20220057609A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220509&DB=EPODOC&CC=KR&NR=20220057609A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PAREEK YOGITA</creatorcontrib><creatorcontrib>GORADIA PRERNA SONTHALIA</creatorcontrib><creatorcontrib>KADAM ANKUR</creatorcontrib><creatorcontrib>BAJAJ GEETIKA</creatorcontrib><title>프로세싱 챔버 표면들 또는 컴포넌트들 상에 보호 코팅을 형성하기 위한 방법들</title><description>본 개시내용의 실시예들은 프로세싱 챔버 표면들 및/또는 컴포넌트들, 이를테면 프로세싱 챔버 내의 플라즈마에 노출되는 표면들 상에 세륨 산화물을 함유하는 보호 코팅을 제작하거나 아니면 형성하기 위한 방법들을 제공한다. 하나 이상의 실시예들에서, 프로세싱 챔버 내에 보호 코팅을 형성하는 방법은 ALD(atomic layer deposition) 프로세스 동안 챔버 표면 또는 챔버 컴포넌트 상에 세륨 산화물 층을 증착하는 단계를 포함한다. ALD 프로세스는 ALD 사이클 동안, 챔버 표면 또는 챔버 컴포넌트를 세륨 전구체, 퍼지 가스, 산화제 및 퍼지 가스에 순차적으로 노출시키는 것, 그리고 세륨 산화물 층을 증착하기 위해 ALD 사이클을 반복하는 것을 포함한다.
Embodiments of the disclosure provide methods for fabricating or otherwise forming a protective coating containing cerium oxide on processing chamber surfaces and/or components, such as surfaces which are exposed to a plasma within a processing chamber. In one or more embodiments, a method of forming a protective coating within a processing chamber includes depositing a cerium oxide layer on a chamber surface or a chamber component during an atomic layer deposition (ALD) process. The ALD process includes sequentially exposing the chamber surface or the chamber component to a cerium precursor, a purge gas, an oxidizing agent, and the purge gas during an ALD cycle, and repeating the ALD cycle to deposit the cerium oxide layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZMh6O6Xl9cI5b1p2vOneqPBm45TXm1oU3k6c83rllteTlyi8njHhddcUhTe7t7ztX_O6pedt1w6Q8JvmxjfTJyi83rzl7YwdCm_2Tnnb0_pmLlDjjKlvWja-nTrj1Y4NCm_mtLydOkfh9YaVrzdNBeriYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx3kFGBkZGBgam5mYGlo7GxKkCAK5eX_A</recordid><startdate>20220509</startdate><enddate>20220509</enddate><creator>PAREEK YOGITA</creator><creator>GORADIA PRERNA SONTHALIA</creator><creator>KADAM ANKUR</creator><creator>BAJAJ GEETIKA</creator><scope>EVB</scope></search><sort><creationdate>20220509</creationdate><title>프로세싱 챔버 표면들 또는 컴포넌트들 상에 보호 코팅을 형성하기 위한 방법들</title><author>PAREEK YOGITA ; GORADIA PRERNA SONTHALIA ; KADAM ANKUR ; BAJAJ GEETIKA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20220057609A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>kor</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>PAREEK YOGITA</creatorcontrib><creatorcontrib>GORADIA PRERNA SONTHALIA</creatorcontrib><creatorcontrib>KADAM ANKUR</creatorcontrib><creatorcontrib>BAJAJ GEETIKA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PAREEK YOGITA</au><au>GORADIA PRERNA SONTHALIA</au><au>KADAM ANKUR</au><au>BAJAJ GEETIKA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>프로세싱 챔버 표면들 또는 컴포넌트들 상에 보호 코팅을 형성하기 위한 방법들</title><date>2022-05-09</date><risdate>2022</risdate><abstract>본 개시내용의 실시예들은 프로세싱 챔버 표면들 및/또는 컴포넌트들, 이를테면 프로세싱 챔버 내의 플라즈마에 노출되는 표면들 상에 세륨 산화물을 함유하는 보호 코팅을 제작하거나 아니면 형성하기 위한 방법들을 제공한다. 하나 이상의 실시예들에서, 프로세싱 챔버 내에 보호 코팅을 형성하는 방법은 ALD(atomic layer deposition) 프로세스 동안 챔버 표면 또는 챔버 컴포넌트 상에 세륨 산화물 층을 증착하는 단계를 포함한다. ALD 프로세스는 ALD 사이클 동안, 챔버 표면 또는 챔버 컴포넌트를 세륨 전구체, 퍼지 가스, 산화제 및 퍼지 가스에 순차적으로 노출시키는 것, 그리고 세륨 산화물 층을 증착하기 위해 ALD 사이클을 반복하는 것을 포함한다.
Embodiments of the disclosure provide methods for fabricating or otherwise forming a protective coating containing cerium oxide on processing chamber surfaces and/or components, such as surfaces which are exposed to a plasma within a processing chamber. In one or more embodiments, a method of forming a protective coating within a processing chamber includes depositing a cerium oxide layer on a chamber surface or a chamber component during an atomic layer deposition (ALD) process. The ALD process includes sequentially exposing the chamber surface or the chamber component to a cerium precursor, a purge gas, an oxidizing agent, and the purge gas during an ALD cycle, and repeating the ALD cycle to deposit the cerium oxide layer.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | 프로세싱 챔버 표면들 또는 컴포넌트들 상에 보호 코팅을 형성하기 위한 방법들 |
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