MATERIAL FOR FABRICATING THIN FILM METHOD FOR FABRICATING THIN FILM USING THE SAME AND FABRICATING EQUIPMENT FOR THIN FILM USING THE SAME
Provided are a material for fabricating a thin film capable of fabricating a thin film having improved quality and productivity by including a Group 5 element precursor having a low melting point and excellent thermal stability, a method for fabricating a thin film using the same, and a facility for...
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| creator | AOKI YUTARO CHO YOUN JOUNG KOIDE TAKANORI UCHIUZOU HIROYUKI HARANO KAZUKI PARK GYU HEE RYU SEUNG MIN SAITO KAZUYA MANABE YOSHIKI FUSE WAKANA |
| description | Provided are a material for fabricating a thin film capable of fabricating a thin film having improved quality and productivity by including a Group 5 element precursor having a low melting point and excellent thermal stability, a method for fabricating a thin film using the same, and a facility for fabricating a thin film using the same. The material for fabricating a thin film includes a Group 5 element precursor of formula (1). In the formula (1), M^1 can be a Group 5 element, each of R^1 to R^10 independently can be a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or formula (2), R^11 can be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and L^1 can be an alkyl group, an alkylamino group, an alkoxy group or an alkyl silyl group, each of which can have 1 to 5 carbon atoms and can be substituted or unsubstituted.
녹는점이 낮고 열안정성이 우수한 5족 원소 전구체를 포함하여 품질 및 생산성이 개선된 박막을 제조할 수 있는 박막 제조용 물질, 이를 이용한 박막의 제조 방법 및 이를 이용한 박막의 제조 설비가 제공된다. 박막 제조용 물질은, 하기 일반식(1)로 표시되는 5족 원소 전구체를 포함한다. JPEGpat00037.jpg11088(1) (상기 일반식(1)에서, M1은 5족 원소를 나타내고, 각각의 R1 내지 R10은 독립적으로, 수소 원자, 할로겐 원자, 치환기를 가질 수도 있는 탄소 원자수 1~5의 알킬(alkyl)기, 또는 하기 일반식(2)를 나타내고, R11은 치환기를 가질 수도 있는 탄소 원자수 1~10의 알킬기를 나타내고, L1은 치환기를 가질 수도 있는 탄소 원자수 1~5의 알킬기, 알킬아미노(alkylamino)기, 알콕시(alkoxy)기, 또는 알킬실릴(alkylsilyl)기를 나타낸다.) |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20210151294A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20210151294A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20210151294A3</originalsourceid><addsrcrecordid>eNrjZOj0dQxxDfJ09FFw8w9ScHN0CvJ0dgzx9HNXCPHw9FNw8_TxVfB1DfHwd8GjIDQYwndVCHb0dVVw9HNBUegaGOoZ4OvqFwI2Apc2HgbWtMSc4lReKM3NoOzmGuLsoZtakB-fWlyQmJyal1oS7x1kZGBkaGBoamhkaeJoTJwqABLiPqs</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MATERIAL FOR FABRICATING THIN FILM METHOD FOR FABRICATING THIN FILM USING THE SAME AND FABRICATING EQUIPMENT FOR THIN FILM USING THE SAME</title><source>esp@cenet</source><creator>AOKI YUTARO ; CHO YOUN JOUNG ; KOIDE TAKANORI ; UCHIUZOU HIROYUKI ; HARANO KAZUKI ; PARK GYU HEE ; RYU SEUNG MIN ; SAITO KAZUYA ; MANABE YOSHIKI ; FUSE WAKANA</creator><creatorcontrib>AOKI YUTARO ; CHO YOUN JOUNG ; KOIDE TAKANORI ; UCHIUZOU HIROYUKI ; HARANO KAZUKI ; PARK GYU HEE ; RYU SEUNG MIN ; SAITO KAZUYA ; MANABE YOSHIKI ; FUSE WAKANA</creatorcontrib><description>Provided are a material for fabricating a thin film capable of fabricating a thin film having improved quality and productivity by including a Group 5 element precursor having a low melting point and excellent thermal stability, a method for fabricating a thin film using the same, and a facility for fabricating a thin film using the same. The material for fabricating a thin film includes a Group 5 element precursor of formula (1). In the formula (1), M^1 can be a Group 5 element, each of R^1 to R^10 independently can be a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or formula (2), R^11 can be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and L^1 can be an alkyl group, an alkylamino group, an alkoxy group or an alkyl silyl group, each of which can have 1 to 5 carbon atoms and can be substituted or unsubstituted.
녹는점이 낮고 열안정성이 우수한 5족 원소 전구체를 포함하여 품질 및 생산성이 개선된 박막을 제조할 수 있는 박막 제조용 물질, 이를 이용한 박막의 제조 방법 및 이를 이용한 박막의 제조 설비가 제공된다. 박막 제조용 물질은, 하기 일반식(1)로 표시되는 5족 원소 전구체를 포함한다. JPEGpat00037.jpg11088(1) (상기 일반식(1)에서, M1은 5족 원소를 나타내고, 각각의 R1 내지 R10은 독립적으로, 수소 원자, 할로겐 원자, 치환기를 가질 수도 있는 탄소 원자수 1~5의 알킬(alkyl)기, 또는 하기 일반식(2)를 나타내고, R11은 치환기를 가질 수도 있는 탄소 원자수 1~10의 알킬기를 나타내고, L1은 치환기를 가질 수도 있는 탄소 원자수 1~5의 알킬기, 알킬아미노(alkylamino)기, 알콕시(alkoxy)기, 또는 알킬실릴(alkylsilyl)기를 나타낸다.)</description><language>eng ; kor</language><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; ORGANIC CHEMISTRY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211214&DB=EPODOC&CC=KR&NR=20210151294A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211214&DB=EPODOC&CC=KR&NR=20210151294A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AOKI YUTARO</creatorcontrib><creatorcontrib>CHO YOUN JOUNG</creatorcontrib><creatorcontrib>KOIDE TAKANORI</creatorcontrib><creatorcontrib>UCHIUZOU HIROYUKI</creatorcontrib><creatorcontrib>HARANO KAZUKI</creatorcontrib><creatorcontrib>PARK GYU HEE</creatorcontrib><creatorcontrib>RYU SEUNG MIN</creatorcontrib><creatorcontrib>SAITO KAZUYA</creatorcontrib><creatorcontrib>MANABE YOSHIKI</creatorcontrib><creatorcontrib>FUSE WAKANA</creatorcontrib><title>MATERIAL FOR FABRICATING THIN FILM METHOD FOR FABRICATING THIN FILM USING THE SAME AND FABRICATING EQUIPMENT FOR THIN FILM USING THE SAME</title><description>Provided are a material for fabricating a thin film capable of fabricating a thin film having improved quality and productivity by including a Group 5 element precursor having a low melting point and excellent thermal stability, a method for fabricating a thin film using the same, and a facility for fabricating a thin film using the same. The material for fabricating a thin film includes a Group 5 element precursor of formula (1). In the formula (1), M^1 can be a Group 5 element, each of R^1 to R^10 independently can be a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or formula (2), R^11 can be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and L^1 can be an alkyl group, an alkylamino group, an alkoxy group or an alkyl silyl group, each of which can have 1 to 5 carbon atoms and can be substituted or unsubstituted.
녹는점이 낮고 열안정성이 우수한 5족 원소 전구체를 포함하여 품질 및 생산성이 개선된 박막을 제조할 수 있는 박막 제조용 물질, 이를 이용한 박막의 제조 방법 및 이를 이용한 박막의 제조 설비가 제공된다. 박막 제조용 물질은, 하기 일반식(1)로 표시되는 5족 원소 전구체를 포함한다. JPEGpat00037.jpg11088(1) (상기 일반식(1)에서, M1은 5족 원소를 나타내고, 각각의 R1 내지 R10은 독립적으로, 수소 원자, 할로겐 원자, 치환기를 가질 수도 있는 탄소 원자수 1~5의 알킬(alkyl)기, 또는 하기 일반식(2)를 나타내고, R11은 치환기를 가질 수도 있는 탄소 원자수 1~10의 알킬기를 나타내고, L1은 치환기를 가질 수도 있는 탄소 원자수 1~5의 알킬기, 알킬아미노(alkylamino)기, 알콕시(alkoxy)기, 또는 알킬실릴(alkylsilyl)기를 나타낸다.)</description><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>ORGANIC CHEMISTRY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOj0dQxxDfJ09FFw8w9ScHN0CvJ0dgzx9HNXCPHw9FNw8_TxVfB1DfHwd8GjIDQYwndVCHb0dVVw9HNBUegaGOoZ4OvqFwI2Apc2HgbWtMSc4lReKM3NoOzmGuLsoZtakB-fWlyQmJyal1oS7x1kZGBkaGBoamhkaeJoTJwqABLiPqs</recordid><startdate>20211214</startdate><enddate>20211214</enddate><creator>AOKI YUTARO</creator><creator>CHO YOUN JOUNG</creator><creator>KOIDE TAKANORI</creator><creator>UCHIUZOU HIROYUKI</creator><creator>HARANO KAZUKI</creator><creator>PARK GYU HEE</creator><creator>RYU SEUNG MIN</creator><creator>SAITO KAZUYA</creator><creator>MANABE YOSHIKI</creator><creator>FUSE WAKANA</creator><scope>EVB</scope></search><sort><creationdate>20211214</creationdate><title>MATERIAL FOR FABRICATING THIN FILM METHOD FOR FABRICATING THIN FILM USING THE SAME AND FABRICATING EQUIPMENT FOR THIN FILM USING THE SAME</title><author>AOKI YUTARO ; CHO YOUN JOUNG ; KOIDE TAKANORI ; UCHIUZOU HIROYUKI ; HARANO KAZUKI ; PARK GYU HEE ; RYU SEUNG MIN ; SAITO KAZUYA ; MANABE YOSHIKI ; FUSE WAKANA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20210151294A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2021</creationdate><topic>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>ORGANIC CHEMISTRY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>AOKI YUTARO</creatorcontrib><creatorcontrib>CHO YOUN JOUNG</creatorcontrib><creatorcontrib>KOIDE TAKANORI</creatorcontrib><creatorcontrib>UCHIUZOU HIROYUKI</creatorcontrib><creatorcontrib>HARANO KAZUKI</creatorcontrib><creatorcontrib>PARK GYU HEE</creatorcontrib><creatorcontrib>RYU SEUNG MIN</creatorcontrib><creatorcontrib>SAITO KAZUYA</creatorcontrib><creatorcontrib>MANABE YOSHIKI</creatorcontrib><creatorcontrib>FUSE WAKANA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AOKI YUTARO</au><au>CHO YOUN JOUNG</au><au>KOIDE TAKANORI</au><au>UCHIUZOU HIROYUKI</au><au>HARANO KAZUKI</au><au>PARK GYU HEE</au><au>RYU SEUNG MIN</au><au>SAITO KAZUYA</au><au>MANABE YOSHIKI</au><au>FUSE WAKANA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MATERIAL FOR FABRICATING THIN FILM METHOD FOR FABRICATING THIN FILM USING THE SAME AND FABRICATING EQUIPMENT FOR THIN FILM USING THE SAME</title><date>2021-12-14</date><risdate>2021</risdate><abstract>Provided are a material for fabricating a thin film capable of fabricating a thin film having improved quality and productivity by including a Group 5 element precursor having a low melting point and excellent thermal stability, a method for fabricating a thin film using the same, and a facility for fabricating a thin film using the same. The material for fabricating a thin film includes a Group 5 element precursor of formula (1). In the formula (1), M^1 can be a Group 5 element, each of R^1 to R^10 independently can be a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or formula (2), R^11 can be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and L^1 can be an alkyl group, an alkylamino group, an alkoxy group or an alkyl silyl group, each of which can have 1 to 5 carbon atoms and can be substituted or unsubstituted.
녹는점이 낮고 열안정성이 우수한 5족 원소 전구체를 포함하여 품질 및 생산성이 개선된 박막을 제조할 수 있는 박막 제조용 물질, 이를 이용한 박막의 제조 방법 및 이를 이용한 박막의 제조 설비가 제공된다. 박막 제조용 물질은, 하기 일반식(1)로 표시되는 5족 원소 전구체를 포함한다. JPEGpat00037.jpg11088(1) (상기 일반식(1)에서, M1은 5족 원소를 나타내고, 각각의 R1 내지 R10은 독립적으로, 수소 원자, 할로겐 원자, 치환기를 가질 수도 있는 탄소 원자수 1~5의 알킬(alkyl)기, 또는 하기 일반식(2)를 나타내고, R11은 치환기를 가질 수도 있는 탄소 원자수 1~10의 알킬기를 나타내고, L1은 치환기를 가질 수도 있는 탄소 원자수 1~5의 알킬기, 알킬아미노(alkylamino)기, 알콕시(alkoxy)기, 또는 알킬실릴(alkylsilyl)기를 나타낸다.)</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | MATERIAL FOR FABRICATING THIN FILM METHOD FOR FABRICATING THIN FILM USING THE SAME AND FABRICATING EQUIPMENT FOR THIN FILM USING THE SAME |
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