기판 처리 장치, 반응 용기, 반도체 장치의 제조 방법 및 기록 매체
기판을 지지하는 기판 지지 영역을 갖는 기판 지지구와 기판 지지 영역의 하부에 마련된 단열부가 삽입되는 반응 용기이며, 반응 용기의 내벽의 기판 지지 영역과 대향하는 부분보다도 하측에 반응 용기의 내측을 향해서 돌출되는 돌출부의 단부가 배치되는 반응 용기와, 기판에 처리 가스를 공급하는 가스 공급부를 갖는다. There is provided a technique that includes: a reaction container into which a substrate support including a substrate support...
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| creator | NONOMURA KAZUKI |
| description | 기판을 지지하는 기판 지지 영역을 갖는 기판 지지구와 기판 지지 영역의 하부에 마련된 단열부가 삽입되는 반응 용기이며, 반응 용기의 내벽의 기판 지지 영역과 대향하는 부분보다도 하측에 반응 용기의 내측을 향해서 돌출되는 돌출부의 단부가 배치되는 반응 용기와, 기판에 처리 가스를 공급하는 가스 공급부를 갖는다.
There is provided a technique that includes: a reaction container into which a substrate support including a substrate support region configured to support a substrate and a heat insulator provided below the substrate support region are inserted; a gas supplier configured to supply a gas into the reaction container; and a protruding portion protruding inward from an inner wall of the reaction container on an upper surface side of the heat insulator in a region of the inner wall of the reaction container where the gas supplier and the substrate support do not face each other. |
| format | Patent |
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There is provided a technique that includes: a reaction container into which a substrate support including a substrate support region configured to support a substrate and a heat insulator provided below the substrate support region are inserted; a gas supplier configured to supply a gas into the reaction container; and a protruding portion protruding inward from an inner wall of the reaction container on an upper surface side of the heat insulator in a region of the inner wall of the reaction container where the gas supplier and the substrate support do not face each other.</description><language>kor</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211027&DB=EPODOC&CC=KR&NR=20210129167A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211027&DB=EPODOC&CC=KR&NR=20210129167A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NONOMURA KAZUKI</creatorcontrib><title>기판 처리 장치, 반응 용기, 반도체 장치의 제조 방법 및 기록 매체</title><description>기판을 지지하는 기판 지지 영역을 갖는 기판 지지구와 기판 지지 영역의 하부에 마련된 단열부가 삽입되는 반응 용기이며, 반응 용기의 내벽의 기판 지지 영역과 대향하는 부분보다도 하측에 반응 용기의 내측을 향해서 돌출되는 돌출부의 단부가 배치되는 반응 용기와, 기판에 처리 가스를 공급하는 가스 공급부를 갖는다.
There is provided a technique that includes: a reaction container into which a substrate support including a substrate support region configured to support a substrate and a heat insulator provided below the substrate support region are inserted; a gas supplier configured to supply a gas into the reaction container; and a protruding portion protruding inward from an inner wall of the reaction container on an upper surface side of the heat insulator in a region of the inner wall of the reaction container where the gas supplier and the substrate support do not face each other.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIh4tWPD254JCm82zXi9bI3Cm3lL3-ycoaPwesOMN3MnKryZtRIoD-a-7m95s2kLVMGbuTMU3iyY82bhBqDUytebpgKpfgWg0tcL5yq8Xr4EqJKHgTUtMac4lRdKczMou7mGOHvophbkx6cWFyQmp-allsR7BxkZGBkaGBpZGpqZOxoTpwoAMO9S8Q</recordid><startdate>20211027</startdate><enddate>20211027</enddate><creator>NONOMURA KAZUKI</creator><scope>EVB</scope></search><sort><creationdate>20211027</creationdate><title>기판 처리 장치, 반응 용기, 반도체 장치의 제조 방법 및 기록 매체</title><author>NONOMURA KAZUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20210129167A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>kor</language><creationdate>2021</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>NONOMURA KAZUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NONOMURA KAZUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>기판 처리 장치, 반응 용기, 반도체 장치의 제조 방법 및 기록 매체</title><date>2021-10-27</date><risdate>2021</risdate><abstract>기판을 지지하는 기판 지지 영역을 갖는 기판 지지구와 기판 지지 영역의 하부에 마련된 단열부가 삽입되는 반응 용기이며, 반응 용기의 내벽의 기판 지지 영역과 대향하는 부분보다도 하측에 반응 용기의 내측을 향해서 돌출되는 돌출부의 단부가 배치되는 반응 용기와, 기판에 처리 가스를 공급하는 가스 공급부를 갖는다.
There is provided a technique that includes: a reaction container into which a substrate support including a substrate support region configured to support a substrate and a heat insulator provided below the substrate support region are inserted; a gas supplier configured to supply a gas into the reaction container; and a protruding portion protruding inward from an inner wall of the reaction container on an upper surface side of the heat insulator in a region of the inner wall of the reaction container where the gas supplier and the substrate support do not face each other.</abstract><oa>free_for_read</oa></addata></record> |
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| language | kor |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | 기판 처리 장치, 반응 용기, 반도체 장치의 제조 방법 및 기록 매체 |
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