촬상 소자 및 촬상 소자의 제조 방법
화소가 미세화한 경우라도, 인접하는 화소로부터의 입사광을 차광하는 차광체를 용이하게 형성한다. 촬상 소자는 광전 변환부, 절연막, 입사광 투과막 및 차광체를 구비한다. 광전 변환부는 반도체 기판에 형성되어 피사체로부터의 입사광을 광전 변환함과 함께 복수의 화소에 배치된다. 절연막은 복수의 화소에 배치되어 반도체 기판을 절연한다. 입사광 투과막은 복수의 화소의 절연막에 인접하여 배치되어 입사광을 투과한다. 차광체는 복수의 화소의 각각의 주연부의 입사광 투과막에 형성된 홈에 배치되어 입사광을 차광한다. A light-shielding...
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| creator | SAYAMA YUKIHIRO HAGIHARA YOUSUKE NISHIKIDO KENJU OHKUBO YUKA NISHIYAMA TSUBASA TANAKA YOSHIKAZU OHBA NOBUYUKI NAKAJIKI SINTARO |
| description | 화소가 미세화한 경우라도, 인접하는 화소로부터의 입사광을 차광하는 차광체를 용이하게 형성한다. 촬상 소자는 광전 변환부, 절연막, 입사광 투과막 및 차광체를 구비한다. 광전 변환부는 반도체 기판에 형성되어 피사체로부터의 입사광을 광전 변환함과 함께 복수의 화소에 배치된다. 절연막은 복수의 화소에 배치되어 반도체 기판을 절연한다. 입사광 투과막은 복수의 화소의 절연막에 인접하여 배치되어 입사광을 투과한다. 차광체는 복수의 화소의 각각의 주연부의 입사광 투과막에 형성된 홈에 배치되어 입사광을 차광한다.
A light-shielding body that shields incident light from an adjacent pixel is easily formed even in a case where the pixel is made finer.An imaging element is provided with a photoelectric conversion unit, an insulating film, an incident light transmitting film, and a light-shielding body. The photoelectric conversion unit is formed in a semiconductor substrate to perform photoelectric conversion of incident light from a subject and is arranged in a plurality of pixels. The insulating film is arranged on a plurality of pixels to insulate the semiconductor substrate. The incident light transmitting film is arranged adjacent to the insulating film of the plurality of pixels and transmits the incident light. The light-shielding body is arranged in a groove formed in the incident light transmitting film on a peripheral edge of each of the plurality of pixels to shield the incident light. |
| format | Patent |
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A light-shielding body that shields incident light from an adjacent pixel is easily formed even in a case where the pixel is made finer.An imaging element is provided with a photoelectric conversion unit, an insulating film, an incident light transmitting film, and a light-shielding body. The photoelectric conversion unit is formed in a semiconductor substrate to perform photoelectric conversion of incident light from a subject and is arranged in a plurality of pixels. The insulating film is arranged on a plurality of pixels to insulate the semiconductor substrate. The incident light transmitting film is arranged adjacent to the insulating film of the plurality of pixels and transmits the incident light. The light-shielding body is arranged in a groove formed in the incident light transmitting film on a peripheral edge of each of the plurality of pixels to shield the incident light.</description><language>kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC COMMUNICATION TECHNIQUE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS ; OPTICS ; PHYSICS ; PICTORIAL COMMUNICATION, e.g. TELEVISION ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210901&DB=EPODOC&CC=KR&NR=20210107640A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210901&DB=EPODOC&CC=KR&NR=20210107640A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SAYAMA YUKIHIRO</creatorcontrib><creatorcontrib>HAGIHARA YOUSUKE</creatorcontrib><creatorcontrib>NISHIKIDO KENJU</creatorcontrib><creatorcontrib>OHKUBO YUKA</creatorcontrib><creatorcontrib>NISHIYAMA TSUBASA</creatorcontrib><creatorcontrib>TANAKA YOSHIKAZU</creatorcontrib><creatorcontrib>OHBA NOBUYUKI</creatorcontrib><creatorcontrib>NAKAJIKI SINTARO</creatorcontrib><title>촬상 소자 및 촬상 소자의 제조 방법</title><description>화소가 미세화한 경우라도, 인접하는 화소로부터의 입사광을 차광하는 차광체를 용이하게 형성한다. 촬상 소자는 광전 변환부, 절연막, 입사광 투과막 및 차광체를 구비한다. 광전 변환부는 반도체 기판에 형성되어 피사체로부터의 입사광을 광전 변환함과 함께 복수의 화소에 배치된다. 절연막은 복수의 화소에 배치되어 반도체 기판을 절연한다. 입사광 투과막은 복수의 화소의 절연막에 인접하여 배치되어 입사광을 투과한다. 차광체는 복수의 화소의 각각의 주연부의 입사광 투과막에 형성된 홈에 배치되어 입사광을 차광한다.
A light-shielding body that shields incident light from an adjacent pixel is easily formed even in a case where the pixel is made finer.An imaging element is provided with a photoelectric conversion unit, an insulating film, an incident light transmitting film, and a light-shielding body. The photoelectric conversion unit is formed in a semiconductor substrate to perform photoelectric conversion of incident light from a subject and is arranged in a plurality of pixels. The insulating film is arranged on a plurality of pixels to insulate the semiconductor substrate. The incident light transmitting film is arranged adjacent to the insulating film of the plurality of pixels and transmits the incident light. The light-shielding body is arranged in a groove formed in the incident light transmitting film on a peripheral edge of each of the plurality of pixels to shield the incident light.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC COMMUNICATION TECHNIQUE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>PICTORIAL COMMUNICATION, e.g. TELEVISION</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB4s2XNm-ZGhTdtPW_mTVB4vaFfAUXkzdwZCm8WzHmzcANQbuXrTVN5GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakm8d5CRgZGhgaGBuZmJgaMxcaoApPE4bw</recordid><startdate>20210901</startdate><enddate>20210901</enddate><creator>SAYAMA YUKIHIRO</creator><creator>HAGIHARA YOUSUKE</creator><creator>NISHIKIDO KENJU</creator><creator>OHKUBO YUKA</creator><creator>NISHIYAMA TSUBASA</creator><creator>TANAKA YOSHIKAZU</creator><creator>OHBA NOBUYUKI</creator><creator>NAKAJIKI SINTARO</creator><scope>EVB</scope></search><sort><creationdate>20210901</creationdate><title>촬상 소자 및 촬상 소자의 제조 방법</title><author>SAYAMA YUKIHIRO ; HAGIHARA YOUSUKE ; NISHIKIDO KENJU ; OHKUBO YUKA ; NISHIYAMA TSUBASA ; TANAKA YOSHIKAZU ; OHBA NOBUYUKI ; NAKAJIKI SINTARO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20210107640A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>kor</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC COMMUNICATION TECHNIQUE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>PICTORIAL COMMUNICATION, e.g. TELEVISION</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SAYAMA YUKIHIRO</creatorcontrib><creatorcontrib>HAGIHARA YOUSUKE</creatorcontrib><creatorcontrib>NISHIKIDO KENJU</creatorcontrib><creatorcontrib>OHKUBO YUKA</creatorcontrib><creatorcontrib>NISHIYAMA TSUBASA</creatorcontrib><creatorcontrib>TANAKA YOSHIKAZU</creatorcontrib><creatorcontrib>OHBA NOBUYUKI</creatorcontrib><creatorcontrib>NAKAJIKI SINTARO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SAYAMA YUKIHIRO</au><au>HAGIHARA YOUSUKE</au><au>NISHIKIDO KENJU</au><au>OHKUBO YUKA</au><au>NISHIYAMA TSUBASA</au><au>TANAKA YOSHIKAZU</au><au>OHBA NOBUYUKI</au><au>NAKAJIKI SINTARO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>촬상 소자 및 촬상 소자의 제조 방법</title><date>2021-09-01</date><risdate>2021</risdate><abstract>화소가 미세화한 경우라도, 인접하는 화소로부터의 입사광을 차광하는 차광체를 용이하게 형성한다. 촬상 소자는 광전 변환부, 절연막, 입사광 투과막 및 차광체를 구비한다. 광전 변환부는 반도체 기판에 형성되어 피사체로부터의 입사광을 광전 변환함과 함께 복수의 화소에 배치된다. 절연막은 복수의 화소에 배치되어 반도체 기판을 절연한다. 입사광 투과막은 복수의 화소의 절연막에 인접하여 배치되어 입사광을 투과한다. 차광체는 복수의 화소의 각각의 주연부의 입사광 투과막에 형성된 홈에 배치되어 입사광을 차광한다.
A light-shielding body that shields incident light from an adjacent pixel is easily formed even in a case where the pixel is made finer.An imaging element is provided with a photoelectric conversion unit, an insulating film, an incident light transmitting film, and a light-shielding body. The photoelectric conversion unit is formed in a semiconductor substrate to perform photoelectric conversion of incident light from a subject and is arranged in a plurality of pixels. The insulating film is arranged on a plurality of pixels to insulate the semiconductor substrate. The incident light transmitting film is arranged adjacent to the insulating film of the plurality of pixels and transmits the incident light. The light-shielding body is arranged in a groove formed in the incident light transmitting film on a peripheral edge of each of the plurality of pixels to shield the incident light.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES |
| title | 촬상 소자 및 촬상 소자의 제조 방법 |
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