DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

Provided is a display device, which includes: a first silicon-based thin film transistor provided on a substrate; a first interlayer insulating film covering the first thin film transistor; an active pattern provided on the first interlayer insulating film and using indium-gallium-zinc oxide (IGZO)...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KIM TAE SIK, KIM YEONG GYU, KIM HEE YEON, LEE SEUNG HYUN, JUNG SUG WOO, JANG KYEONG WOO, SEO KI SEONG, TANAKA TETSUHIRO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Provided is a display device, which includes: a first silicon-based thin film transistor provided on a substrate; a first interlayer insulating film covering the first thin film transistor; an active pattern provided on the first interlayer insulating film and using indium-gallium-zinc oxide (IGZO) having a thickness of 150 Å to 400 Å; a gate insulating film covering the active pattern; a gate pattern disposed on the gate insulating film; and a second interlayer insulating film covering the gate pattern. 표시 장치는, 기판 상에 구비되는 실리콘계 제1 박막 트랜지스터, 상기 제1 박막 트랜지스터를 덮는 제1 층간 절연막, 상기 제1 층간 절연막 상에 구비되고, 150Å 내지 400Å 두께의 인듐-갈륨-아연 산화물(IGZO)을 사용하는 액티브 패턴, 상기 액티브 패턴을 덮는 게이트 절연막, 상기 게이트 절연막 위에 배치되는 게이트 패턴 및 상기 게이트 패턴을 덮는 제2 층간 절연막을 포함한다.