THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
Provided is a thin film transistor array panel capable of improving the reliability by suppressing that a material forming a main wiring layer is oxidized. According to one embodiment of the present invention, the thin film transistor array panel comprises: a gate line positioned on a substrate and...
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| creator | LEE KANG YOUNG KWON SE MYUNG KIM HYUNG MIN KIM NAM JUNE YOUN JAE HYOUNG KIM JANG SOO |
| description | Provided is a thin film transistor array panel capable of improving the reliability by suppressing that a material forming a main wiring layer is oxidized. According to one embodiment of the present invention, the thin film transistor array panel comprises: a gate line positioned on a substrate and including a gate electrode; a gate insulating film formed on the gate line; a first oxide semiconductor layer positioned on the gate insulating layer and formed of an oxide semiconductor; a data wiring layer positioned on the gate insulating layer and intersecting with the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode; and a second oxide semiconductor layer covering the source electrode and the drain electrode. The data wiring layer includes copper or a copper alloy.
본 발명의 일 실시예에 따른 박막 트랜지스터 표시판은 기판 위에 위치하고, 게이트 전극을 포함하는 게이트선, 상기 게이트선 위에 형성된 게이트 절연막, 상기 게이트 절연막 위에 위치하며 산화물 반도체로 형성된 제1 산화물 반도체층, 상기 게이트 절연막 위에 위치하고, 상기 게이트선과 교차하는 데이터선, 상기 데이터선에 연결되어 있는 소스 전극 및 상기 소스 전극과 마주보는 드레인 전극을 포함하는 데이터 배선층, 상기 소스 전극 및 상기 드레인 전극을 덮는 제2 산화물 반도체층을 포함하고, 상기 데이터 배선층은 구리 또는 구리합금을 포함한다. |
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본 발명의 일 실시예에 따른 박막 트랜지스터 표시판은 기판 위에 위치하고, 게이트 전극을 포함하는 게이트선, 상기 게이트선 위에 형성된 게이트 절연막, 상기 게이트 절연막 위에 위치하며 산화물 반도체로 형성된 제1 산화물 반도체층, 상기 게이트 절연막 위에 위치하고, 상기 게이트선과 교차하는 데이터선, 상기 데이터선에 연결되어 있는 소스 전극 및 상기 소스 전극과 마주보는 드레인 전극을 포함하는 데이터 배선층, 상기 소스 전극 및 상기 드레인 전극을 덮는 제2 산화물 반도체층을 포함하고, 상기 데이터 배선층은 구리 또는 구리합금을 포함한다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; SEMICONDUCTOR DEVICES ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210803&DB=EPODOC&CC=KR&NR=20210095825A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210803&DB=EPODOC&CC=KR&NR=20210095825A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE KANG YOUNG</creatorcontrib><creatorcontrib>KWON SE MYUNG</creatorcontrib><creatorcontrib>KIM HYUNG MIN</creatorcontrib><creatorcontrib>KIM NAM JUNE</creatorcontrib><creatorcontrib>YOUN JAE HYOUNG</creatorcontrib><creatorcontrib>KIM JANG SOO</creatorcontrib><title>THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME</title><description>Provided is a thin film transistor array panel capable of improving the reliability by suppressing that a material forming a main wiring layer is oxidized. According to one embodiment of the present invention, the thin film transistor array panel comprises: a gate line positioned on a substrate and including a gate electrode; a gate insulating film formed on the gate line; a first oxide semiconductor layer positioned on the gate insulating layer and formed of an oxide semiconductor; a data wiring layer positioned on the gate insulating layer and intersecting with the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode; and a second oxide semiconductor layer covering the source electrode and the drain electrode. The data wiring layer includes copper or a copper alloy.
본 발명의 일 실시예에 따른 박막 트랜지스터 표시판은 기판 위에 위치하고, 게이트 전극을 포함하는 게이트선, 상기 게이트선 위에 형성된 게이트 절연막, 상기 게이트 절연막 위에 위치하며 산화물 반도체로 형성된 제1 산화물 반도체층, 상기 게이트 절연막 위에 위치하고, 상기 게이트선과 교차하는 데이터선, 상기 데이터선에 연결되어 있는 소스 전극 및 상기 소스 전극과 마주보는 드레인 전극을 포함하는 데이터 배선층, 상기 소스 전극 및 상기 드레인 전극을 덮는 제2 산화물 반도체층을 포함하고, 상기 데이터 배선층은 구리 또는 구리합금을 포함한다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FREQUENCY-CHANGING</subject><subject>NON-LINEAR OPTICS</subject><subject>OPTICAL ANALOGUE/DIGITAL CONVERTERS</subject><subject>OPTICAL LOGIC ELEMENTS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAL8fD0U3Dz9PFVCAly9Av2DA7xD1JwDApyjFQIcPRz9VFw9HNR8HUN8fB3UXADSvk6-oW6OTqHhAZ5-rkrhHi4KgQ7-rryMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JJ47yAjAyNDAwNLUwsjU0dj4lQBAE7wLQY</recordid><startdate>20210803</startdate><enddate>20210803</enddate><creator>LEE KANG YOUNG</creator><creator>KWON SE MYUNG</creator><creator>KIM HYUNG MIN</creator><creator>KIM NAM JUNE</creator><creator>YOUN JAE HYOUNG</creator><creator>KIM JANG SOO</creator><scope>EVB</scope></search><sort><creationdate>20210803</creationdate><title>THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME</title><author>LEE KANG YOUNG ; KWON SE MYUNG ; KIM HYUNG MIN ; KIM NAM JUNE ; YOUN JAE HYOUNG ; KIM JANG SOO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20210095825A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FREQUENCY-CHANGING</topic><topic>NON-LINEAR OPTICS</topic><topic>OPTICAL ANALOGUE/DIGITAL CONVERTERS</topic><topic>OPTICAL LOGIC ELEMENTS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE KANG YOUNG</creatorcontrib><creatorcontrib>KWON SE MYUNG</creatorcontrib><creatorcontrib>KIM HYUNG MIN</creatorcontrib><creatorcontrib>KIM NAM JUNE</creatorcontrib><creatorcontrib>YOUN JAE HYOUNG</creatorcontrib><creatorcontrib>KIM JANG SOO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE KANG YOUNG</au><au>KWON SE MYUNG</au><au>KIM HYUNG MIN</au><au>KIM NAM JUNE</au><au>YOUN JAE HYOUNG</au><au>KIM JANG SOO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME</title><date>2021-08-03</date><risdate>2021</risdate><abstract>Provided is a thin film transistor array panel capable of improving the reliability by suppressing that a material forming a main wiring layer is oxidized. According to one embodiment of the present invention, the thin film transistor array panel comprises: a gate line positioned on a substrate and including a gate electrode; a gate insulating film formed on the gate line; a first oxide semiconductor layer positioned on the gate insulating layer and formed of an oxide semiconductor; a data wiring layer positioned on the gate insulating layer and intersecting with the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode; and a second oxide semiconductor layer covering the source electrode and the drain electrode. The data wiring layer includes copper or a copper alloy.
본 발명의 일 실시예에 따른 박막 트랜지스터 표시판은 기판 위에 위치하고, 게이트 전극을 포함하는 게이트선, 상기 게이트선 위에 형성된 게이트 절연막, 상기 게이트 절연막 위에 위치하며 산화물 반도체로 형성된 제1 산화물 반도체층, 상기 게이트 절연막 위에 위치하고, 상기 게이트선과 교차하는 데이터선, 상기 데이터선에 연결되어 있는 소스 전극 및 상기 소스 전극과 마주보는 드레인 전극을 포함하는 데이터 배선층, 상기 소스 전극 및 상기 드레인 전극을 덮는 제2 산화물 반도체층을 포함하고, 상기 데이터 배선층은 구리 또는 구리합금을 포함한다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME |
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