Display Device Including Oxide Thin Film Transistor And Method Of Driving The Same
The present invention relates to a display device including an oxide thin film transistor and a driving method thereof, and more specifically, to a driving method for measuring the degree of deterioration of the oxide thin film transistor included in the display device. To this end, the present inve...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; kor |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | KIM HYOUNG SIK KANG BYOUNG WOOK |
| description | The present invention relates to a display device including an oxide thin film transistor and a driving method thereof, and more specifically, to a driving method for measuring the degree of deterioration of the oxide thin film transistor included in the display device. To this end, the present invention provides the display device, which includes a display panel including a plurality of pixel areas, and a deterioration measuring unit, wherein the pixel area includes a sensing transistor made of an oxide semiconductor, a reference voltage is applied to a source electrode of the sensing transistor, a first driving voltage is applied to a drain electrode, a current is generated in the sensing transistor when a scan signal for driving the sensing transistor in a saturation region is applied to the gate electrode, and the deterioration measuring unit measures the current generated in the sensing transistor.
본 발명은 산화물 박막 트랜지스터를 포함하는 표시장치 및 그 구동방법에 관한 것으로, 특히 표시장치에 포함된 산화물 박막 트랜지스터의 열화 정도를 측정하는 구동방법에 관한 것이다. 이를 위하여 본 발명은, 다수의 화소 영역을 구비하는 표시패널과, 열화 측정부를 포함하고, 상기 화소 영역은 산화물 반도체로 이루어진 센싱 트랜지스터를 포함하며, 상기 센싱 트랜지스터의 소스 전극에는 기준 전압이 인가되고, 드레인 전극에는 제 1 구동 전압이 인가되며, 게이트 전극에는 상기 센싱 트랜지스터를 포화 영역에서 구동하게 하는 스캔 신호가 인가될 때, 상기 센싱 트랜지스터에 전류가 발생하고,상기 열화 측정부는 상기 센싱 트랜지스터에서 발생한 전류를 측정하는 표시장치를 제공한다. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20210084833A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20210084833A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20210084833A3</originalsourceid><addsrcrecordid>eNqNy7EKwjAUQNEsDqL-wwNnIbYOXYuxKCKFmr2E5NU-SJOQxKJ_L4If4HSXc5esE5SCVW8QOJNGuDhtn4bcA9oXGQQ5koOG7AQyKpcoZR-hdgZumEdvoB1ARJq_gxwR7mrCNVsMyibc_Lpi2-Ykj-cdBt9jCkqjw9xfu4IXe86rQ1WWdfmf-gAtpDdG</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Display Device Including Oxide Thin Film Transistor And Method Of Driving The Same</title><source>esp@cenet</source><creator>KIM HYOUNG SIK ; KANG BYOUNG WOOK</creator><creatorcontrib>KIM HYOUNG SIK ; KANG BYOUNG WOOK</creatorcontrib><description>The present invention relates to a display device including an oxide thin film transistor and a driving method thereof, and more specifically, to a driving method for measuring the degree of deterioration of the oxide thin film transistor included in the display device. To this end, the present invention provides the display device, which includes a display panel including a plurality of pixel areas, and a deterioration measuring unit, wherein the pixel area includes a sensing transistor made of an oxide semiconductor, a reference voltage is applied to a source electrode of the sensing transistor, a first driving voltage is applied to a drain electrode, a current is generated in the sensing transistor when a scan signal for driving the sensing transistor in a saturation region is applied to the gate electrode, and the deterioration measuring unit measures the current generated in the sensing transistor.
본 발명은 산화물 박막 트랜지스터를 포함하는 표시장치 및 그 구동방법에 관한 것으로, 특히 표시장치에 포함된 산화물 박막 트랜지스터의 열화 정도를 측정하는 구동방법에 관한 것이다. 이를 위하여 본 발명은, 다수의 화소 영역을 구비하는 표시패널과, 열화 측정부를 포함하고, 상기 화소 영역은 산화물 반도체로 이루어진 센싱 트랜지스터를 포함하며, 상기 센싱 트랜지스터의 소스 전극에는 기준 전압이 인가되고, 드레인 전극에는 제 1 구동 전압이 인가되며, 게이트 전극에는 상기 센싱 트랜지스터를 포화 영역에서 구동하게 하는 스캔 신호가 인가될 때, 상기 센싱 트랜지스터에 전류가 발생하고,상기 열화 측정부는 상기 센싱 트랜지스터에서 발생한 전류를 측정하는 표시장치를 제공한다.</description><language>eng ; kor</language><subject>ADVERTISING ; ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICESUSING STATIC MEANS TO PRESENT VARIABLE INFORMATION ; BASIC ELECTRIC ELEMENTS ; CRYPTOGRAPHY ; DISPLAY ; EDUCATION ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PHYSICS ; SEALS ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210708&DB=EPODOC&CC=KR&NR=20210084833A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210708&DB=EPODOC&CC=KR&NR=20210084833A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM HYOUNG SIK</creatorcontrib><creatorcontrib>KANG BYOUNG WOOK</creatorcontrib><title>Display Device Including Oxide Thin Film Transistor And Method Of Driving The Same</title><description>The present invention relates to a display device including an oxide thin film transistor and a driving method thereof, and more specifically, to a driving method for measuring the degree of deterioration of the oxide thin film transistor included in the display device. To this end, the present invention provides the display device, which includes a display panel including a plurality of pixel areas, and a deterioration measuring unit, wherein the pixel area includes a sensing transistor made of an oxide semiconductor, a reference voltage is applied to a source electrode of the sensing transistor, a first driving voltage is applied to a drain electrode, a current is generated in the sensing transistor when a scan signal for driving the sensing transistor in a saturation region is applied to the gate electrode, and the deterioration measuring unit measures the current generated in the sensing transistor.
본 발명은 산화물 박막 트랜지스터를 포함하는 표시장치 및 그 구동방법에 관한 것으로, 특히 표시장치에 포함된 산화물 박막 트랜지스터의 열화 정도를 측정하는 구동방법에 관한 것이다. 이를 위하여 본 발명은, 다수의 화소 영역을 구비하는 표시패널과, 열화 측정부를 포함하고, 상기 화소 영역은 산화물 반도체로 이루어진 센싱 트랜지스터를 포함하며, 상기 센싱 트랜지스터의 소스 전극에는 기준 전압이 인가되고, 드레인 전극에는 제 1 구동 전압이 인가되며, 게이트 전극에는 상기 센싱 트랜지스터를 포화 영역에서 구동하게 하는 스캔 신호가 인가될 때, 상기 센싱 트랜지스터에 전류가 발생하고,상기 열화 측정부는 상기 센싱 트랜지스터에서 발생한 전류를 측정하는 표시장치를 제공한다.</description><subject>ADVERTISING</subject><subject>ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICESUSING STATIC MEANS TO PRESENT VARIABLE INFORMATION</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CRYPTOGRAPHY</subject><subject>DISPLAY</subject><subject>EDUCATION</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PHYSICS</subject><subject>SEALS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNy7EKwjAUQNEsDqL-wwNnIbYOXYuxKCKFmr2E5NU-SJOQxKJ_L4If4HSXc5esE5SCVW8QOJNGuDhtn4bcA9oXGQQ5koOG7AQyKpcoZR-hdgZumEdvoB1ARJq_gxwR7mrCNVsMyibc_Lpi2-Ykj-cdBt9jCkqjw9xfu4IXe86rQ1WWdfmf-gAtpDdG</recordid><startdate>20210708</startdate><enddate>20210708</enddate><creator>KIM HYOUNG SIK</creator><creator>KANG BYOUNG WOOK</creator><scope>EVB</scope></search><sort><creationdate>20210708</creationdate><title>Display Device Including Oxide Thin Film Transistor And Method Of Driving The Same</title><author>KIM HYOUNG SIK ; KANG BYOUNG WOOK</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20210084833A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2021</creationdate><topic>ADVERTISING</topic><topic>ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICESUSING STATIC MEANS TO PRESENT VARIABLE INFORMATION</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CRYPTOGRAPHY</topic><topic>DISPLAY</topic><topic>EDUCATION</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PHYSICS</topic><topic>SEALS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM HYOUNG SIK</creatorcontrib><creatorcontrib>KANG BYOUNG WOOK</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM HYOUNG SIK</au><au>KANG BYOUNG WOOK</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Display Device Including Oxide Thin Film Transistor And Method Of Driving The Same</title><date>2021-07-08</date><risdate>2021</risdate><abstract>The present invention relates to a display device including an oxide thin film transistor and a driving method thereof, and more specifically, to a driving method for measuring the degree of deterioration of the oxide thin film transistor included in the display device. To this end, the present invention provides the display device, which includes a display panel including a plurality of pixel areas, and a deterioration measuring unit, wherein the pixel area includes a sensing transistor made of an oxide semiconductor, a reference voltage is applied to a source electrode of the sensing transistor, a first driving voltage is applied to a drain electrode, a current is generated in the sensing transistor when a scan signal for driving the sensing transistor in a saturation region is applied to the gate electrode, and the deterioration measuring unit measures the current generated in the sensing transistor.
본 발명은 산화물 박막 트랜지스터를 포함하는 표시장치 및 그 구동방법에 관한 것으로, 특히 표시장치에 포함된 산화물 박막 트랜지스터의 열화 정도를 측정하는 구동방법에 관한 것이다. 이를 위하여 본 발명은, 다수의 화소 영역을 구비하는 표시패널과, 열화 측정부를 포함하고, 상기 화소 영역은 산화물 반도체로 이루어진 센싱 트랜지스터를 포함하며, 상기 센싱 트랜지스터의 소스 전극에는 기준 전압이 인가되고, 드레인 전극에는 제 1 구동 전압이 인가되며, 게이트 전극에는 상기 센싱 트랜지스터를 포화 영역에서 구동하게 하는 스캔 신호가 인가될 때, 상기 센싱 트랜지스터에 전류가 발생하고,상기 열화 측정부는 상기 센싱 트랜지스터에서 발생한 전류를 측정하는 표시장치를 제공한다.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; kor |
| recordid | cdi_epo_espacenet_KR20210084833A |
| source | esp@cenet |
| subjects | ADVERTISING ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICESUSING STATIC MEANS TO PRESENT VARIABLE INFORMATION BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DISPLAY EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS SEALS SEMICONDUCTOR DEVICES |
| title | Display Device Including Oxide Thin Film Transistor And Method Of Driving The Same |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T13%3A20%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KIM%20HYOUNG%20SIK&rft.date=2021-07-08&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20210084833A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |