Substrate processing apparatus
The present invention relates to a substrate processing device. More specifically, when a plurality of stations are provided inside the chamber, the substrate processing device is capable of adjusting the length of an exhaust path through which exhaust gas is exhausted from each station to match the...
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| creator | WON JONG PHIL JANG KYUNG HO ROH HEE SUNG |
| description | The present invention relates to a substrate processing device. More specifically, when a plurality of stations are provided inside the chamber, the substrate processing device is capable of adjusting the length of an exhaust path through which exhaust gas is exhausted from each station to match the uniformity of the thickness of a thin film deposited on a substrate or to adjust the thickness of the thin film.
본 발명은 기판처리장치에 대한 것으로서, 보다 상세하게는 챔버 내부에 복수개의 스테이션을 구비한 경우에 각 스테이션에서 배기가스가 배기되는 배기경로의 길이를 조절하여 기판에 증착되는 박막의 두께의 균일도를 맞추거나 박막의 두께를 조절할 수 있는 기판처리장치에 대한 것이다. |
| format | Patent |
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본 발명은 기판처리장치에 대한 것으로서, 보다 상세하게는 챔버 내부에 복수개의 스테이션을 구비한 경우에 각 스테이션에서 배기가스가 배기되는 배기경로의 길이를 조절하여 기판에 증착되는 박막의 두께의 균일도를 맞추거나 박막의 두께를 조절할 수 있는 기판처리장치에 대한 것이다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210702&DB=EPODOC&CC=KR&NR=20210081751A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210702&DB=EPODOC&CC=KR&NR=20210081751A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WON JONG PHIL</creatorcontrib><creatorcontrib>JANG KYUNG HO</creatorcontrib><creatorcontrib>ROH HEE SUNG</creatorcontrib><title>Substrate processing apparatus</title><description>The present invention relates to a substrate processing device. More specifically, when a plurality of stations are provided inside the chamber, the substrate processing device is capable of adjusting the length of an exhaust path through which exhaust gas is exhausted from each station to match the uniformity of the thickness of a thin film deposited on a substrate or to adjust the thickness of the thin film.
본 발명은 기판처리장치에 대한 것으로서, 보다 상세하게는 챔버 내부에 복수개의 스테이션을 구비한 경우에 각 스테이션에서 배기가스가 배기되는 배기경로의 길이를 조절하여 기판에 증착되는 박막의 두께의 균일도를 맞추거나 박막의 두께를 조절할 수 있는 기판처리장치에 대한 것이다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJALLk0qLilKLElVKCjKT04tLs7MS1dILChIBIqVFvMwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUknjvICMDI0MDAwtDc1NDR2PiVAEAxGUl4g</recordid><startdate>20210702</startdate><enddate>20210702</enddate><creator>WON JONG PHIL</creator><creator>JANG KYUNG HO</creator><creator>ROH HEE SUNG</creator><scope>EVB</scope></search><sort><creationdate>20210702</creationdate><title>Substrate processing apparatus</title><author>WON JONG PHIL ; JANG KYUNG HO ; ROH HEE SUNG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20210081751A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>WON JONG PHIL</creatorcontrib><creatorcontrib>JANG KYUNG HO</creatorcontrib><creatorcontrib>ROH HEE SUNG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WON JONG PHIL</au><au>JANG KYUNG HO</au><au>ROH HEE SUNG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Substrate processing apparatus</title><date>2021-07-02</date><risdate>2021</risdate><abstract>The present invention relates to a substrate processing device. More specifically, when a plurality of stations are provided inside the chamber, the substrate processing device is capable of adjusting the length of an exhaust path through which exhaust gas is exhausted from each station to match the uniformity of the thickness of a thin film deposited on a substrate or to adjust the thickness of the thin film.
본 발명은 기판처리장치에 대한 것으로서, 보다 상세하게는 챔버 내부에 복수개의 스테이션을 구비한 경우에 각 스테이션에서 배기가스가 배기되는 배기경로의 길이를 조절하여 기판에 증착되는 박막의 두께의 균일도를 맞추거나 박막의 두께를 조절할 수 있는 기판처리장치에 대한 것이다.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Substrate processing apparatus |
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