SiC HIGH QUALITY SILICON CARBIDE CRYSTAL AND METHOD FOR GROWING THE SAME

The present disclosure relates to a method for growing SiC single crystals which comprises: a step of positioning seeds in a reactor; a first step of raising an internal temperature of the reactor to a growing temperature and reducing an internal pressure of the reactor to a growing pressure; a seco...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SEO HAN SEOK, KIM JANG YUL, EUN TAI HEE, CHUN MYONG CHUEL, YEO IM GYU, LEE SEUNG SEOK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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