Substrate processing apparatus and method
The present invention relates to a substrate processing device and a substrate processing method. More specifically, the present invention relates to the substrate processing device and the substrate processing method that can perform substrate processing of etching, deposition, and the like on a su...
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| creator | LEE JUN HYEOK KIM JEONG HOON NOH IL HO BANG SEUNG DUK KIM MIN SU |
| description | The present invention relates to a substrate processing device and a substrate processing method. More specifically, the present invention relates to the substrate processing device and the substrate processing method that can perform substrate processing of etching, deposition, and the like on a substrate. Disclosed, in the present invention, is the substrate processing device comprising: a process chamber (100) that forms a sealed processing space (S) for substrate processing; a substrate support part (200) installed in the process chamber (100) to support a substrate (10); a gas injection part (300) installed on the upper side of the process chamber (100) to inject gas into the processing space (S); and an RF power source part (600) for supplying RF power to the gas injection part (300).
본 발명은 기판처리장치 및 기판처리방법에 관한 것으로서, 보다 상세하게는 기판에 대한 식각 및 증착 등의 기판처리를 수행하는 기판처리장치 및 기판처리방법에 관한 것이다. 본 발명은, 기판처리를 위한 밀폐된 처리공간(S)을 형성하는 공정챔버(100)와; 상기 공정챔버(100) 내에 설치되어 기판(10)을 지지하는 기판지지부(200)와; 상기 공정챔버(100) 상측에 설치되어 상기 처리공간(S)으로 가스를 분사하는 가스분사부(300)와; 상기 가스분사부(300)에 RF전력을 공급하기 위한 RF전력소스부(600)를 포함하는 것을 특징으로 하는 기판처리장치를 개시한다. |
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본 발명은 기판처리장치 및 기판처리방법에 관한 것으로서, 보다 상세하게는 기판에 대한 식각 및 증착 등의 기판처리를 수행하는 기판처리장치 및 기판처리방법에 관한 것이다. 본 발명은, 기판처리를 위한 밀폐된 처리공간(S)을 형성하는 공정챔버(100)와; 상기 공정챔버(100) 내에 설치되어 기판(10)을 지지하는 기판지지부(200)와; 상기 공정챔버(100) 상측에 설치되어 상기 처리공간(S)으로 가스를 분사하는 가스분사부(300)와; 상기 가스분사부(300)에 RF전력을 공급하기 위한 RF전력소스부(600)를 포함하는 것을 특징으로 하는 기판처리장치를 개시한다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210624&DB=EPODOC&CC=KR&NR=20210076480A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210624&DB=EPODOC&CC=KR&NR=20210076480A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE JUN HYEOK</creatorcontrib><creatorcontrib>KIM JEONG HOON</creatorcontrib><creatorcontrib>NOH IL HO</creatorcontrib><creatorcontrib>BANG SEUNG DUK</creatorcontrib><creatorcontrib>KIM MIN SU</creatorcontrib><title>Substrate processing apparatus and method</title><description>The present invention relates to a substrate processing device and a substrate processing method. More specifically, the present invention relates to the substrate processing device and the substrate processing method that can perform substrate processing of etching, deposition, and the like on a substrate. Disclosed, in the present invention, is the substrate processing device comprising: a process chamber (100) that forms a sealed processing space (S) for substrate processing; a substrate support part (200) installed in the process chamber (100) to support a substrate (10); a gas injection part (300) installed on the upper side of the process chamber (100) to inject gas into the processing space (S); and an RF power source part (600) for supplying RF power to the gas injection part (300).
본 발명은 기판처리장치 및 기판처리방법에 관한 것으로서, 보다 상세하게는 기판에 대한 식각 및 증착 등의 기판처리를 수행하는 기판처리장치 및 기판처리방법에 관한 것이다. 본 발명은, 기판처리를 위한 밀폐된 처리공간(S)을 형성하는 공정챔버(100)와; 상기 공정챔버(100) 내에 설치되어 기판(10)을 지지하는 기판지지부(200)와; 상기 공정챔버(100) 상측에 설치되어 상기 처리공간(S)으로 가스를 분사하는 가스분사부(300)와; 상기 가스분사부(300)에 RF전력을 공급하기 위한 RF전력소스부(600)를 포함하는 것을 특징으로 하는 기판처리장치를 개시한다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAMLk0qLilKLElVKCjKT04tLs7MS1dILChIBIqVFisk5qUo5KaWZOSn8DCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSSeO8gIwMjQwMDczMTCwNHY-JUAQDSkynn</recordid><startdate>20210624</startdate><enddate>20210624</enddate><creator>LEE JUN HYEOK</creator><creator>KIM JEONG HOON</creator><creator>NOH IL HO</creator><creator>BANG SEUNG DUK</creator><creator>KIM MIN SU</creator><scope>EVB</scope></search><sort><creationdate>20210624</creationdate><title>Substrate processing apparatus and method</title><author>LEE JUN HYEOK ; KIM JEONG HOON ; NOH IL HO ; BANG SEUNG DUK ; KIM MIN SU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20210076480A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE JUN HYEOK</creatorcontrib><creatorcontrib>KIM JEONG HOON</creatorcontrib><creatorcontrib>NOH IL HO</creatorcontrib><creatorcontrib>BANG SEUNG DUK</creatorcontrib><creatorcontrib>KIM MIN SU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE JUN HYEOK</au><au>KIM JEONG HOON</au><au>NOH IL HO</au><au>BANG SEUNG DUK</au><au>KIM MIN SU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Substrate processing apparatus and method</title><date>2021-06-24</date><risdate>2021</risdate><abstract>The present invention relates to a substrate processing device and a substrate processing method. More specifically, the present invention relates to the substrate processing device and the substrate processing method that can perform substrate processing of etching, deposition, and the like on a substrate. Disclosed, in the present invention, is the substrate processing device comprising: a process chamber (100) that forms a sealed processing space (S) for substrate processing; a substrate support part (200) installed in the process chamber (100) to support a substrate (10); a gas injection part (300) installed on the upper side of the process chamber (100) to inject gas into the processing space (S); and an RF power source part (600) for supplying RF power to the gas injection part (300).
본 발명은 기판처리장치 및 기판처리방법에 관한 것으로서, 보다 상세하게는 기판에 대한 식각 및 증착 등의 기판처리를 수행하는 기판처리장치 및 기판처리방법에 관한 것이다. 본 발명은, 기판처리를 위한 밀폐된 처리공간(S)을 형성하는 공정챔버(100)와; 상기 공정챔버(100) 내에 설치되어 기판(10)을 지지하는 기판지지부(200)와; 상기 공정챔버(100) 상측에 설치되어 상기 처리공간(S)으로 가스를 분사하는 가스분사부(300)와; 상기 가스분사부(300)에 RF전력을 공급하기 위한 RF전력소스부(600)를 포함하는 것을 특징으로 하는 기판처리장치를 개시한다.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Substrate processing apparatus and method |
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