Apparatus and Method for Deposition of Thin Film
A device for depositing a thin film according to one embodiment comprises: a chamber wherein a processing space for processing a substrate by generating plasma therein is formed; a gas supply device that injects process gas into the chamber; a susceptor installed so as to face the gas supply device...
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| creator | SEO KYOUNG CHEUN JO GA EUN PYUN SEUNG CHEOL RYU HUI SEONG KIM DAE KYU |
| description | A device for depositing a thin film according to one embodiment comprises: a chamber wherein a processing space for processing a substrate by generating plasma therein is formed; a gas supply device that injects process gas into the chamber; a susceptor installed so as to face the gas supply device and on which the substrate is mounted; and a power supply and matching part that connects to the gas supply device to provide a high-frequency RF power. As a substrate to be processed is provided, the present invention may be configured to supply a reducing gas to at least a part of a section including a reduction process by adsorbing a first source gas onto the substrate, and performing a film forming process by supplying a second source gas after the reduction process of reducing the first source gas by a plasma. Therefore, the present invention is capable of allowing the thin film having a uniform thickness and a dense film quality to be formed on the substrate on which a lower pattern is formed.
일 실시예에 의한 박막 증착 장치는 내부에 플라즈마를 발생시켜 기판을 처리하는 처리 공간이 형성되는 챔버, 챔버 내부로 공정 가스를 분사하기 위한 가스 공급 장치. 가스 공급 장치와 대향하도록 설치되고 상부에 기판이 안착되는 서셉터 및 가스 공급 장치와 연결되어 고주파 RF 전원을 제공하는 전원 공급 및 정합부를 포함하고, 처리 대상 기판이 제공됨에 따라, 제 1 소스 가스를 기판 상에 흡착시키고 제 1 소스 가스를 플라즈마에 의해 환원시키는 환원공정 이후 제 2 소스 가스를 공급하여 성막 공정을 수행하며, 환원 공정을 포함하는 적어도 일부 구간에 환원 가스를 공급하도록 구성될 수 있다. |
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일 실시예에 의한 박막 증착 장치는 내부에 플라즈마를 발생시켜 기판을 처리하는 처리 공간이 형성되는 챔버, 챔버 내부로 공정 가스를 분사하기 위한 가스 공급 장치. 가스 공급 장치와 대향하도록 설치되고 상부에 기판이 안착되는 서셉터 및 가스 공급 장치와 연결되어 고주파 RF 전원을 제공하는 전원 공급 및 정합부를 포함하고, 처리 대상 기판이 제공됨에 따라, 제 1 소스 가스를 기판 상에 흡착시키고 제 1 소스 가스를 플라즈마에 의해 환원시키는 환원공정 이후 제 2 소스 가스를 공급하여 성막 공정을 수행하며, 환원 공정을 포함하는 적어도 일부 구간에 환원 가스를 공급하도록 구성될 수 있다.</description><language>eng ; kor</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210517&DB=EPODOC&CC=KR&NR=20210055348A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210517&DB=EPODOC&CC=KR&NR=20210055348A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SEO KYOUNG CHEUN</creatorcontrib><creatorcontrib>JO GA EUN</creatorcontrib><creatorcontrib>PYUN SEUNG CHEOL</creatorcontrib><creatorcontrib>RYU HUI SEONG</creatorcontrib><creatorcontrib>KIM DAE KYU</creatorcontrib><title>Apparatus and Method for Deposition of Thin Film</title><description>A device for depositing a thin film according to one embodiment comprises: a chamber wherein a processing space for processing a substrate by generating plasma therein is formed; a gas supply device that injects process gas into the chamber; a susceptor installed so as to face the gas supply device and on which the substrate is mounted; and a power supply and matching part that connects to the gas supply device to provide a high-frequency RF power. As a substrate to be processed is provided, the present invention may be configured to supply a reducing gas to at least a part of a section including a reduction process by adsorbing a first source gas onto the substrate, and performing a film forming process by supplying a second source gas after the reduction process of reducing the first source gas by a plasma. Therefore, the present invention is capable of allowing the thin film having a uniform thickness and a dense film quality to be formed on the substrate on which a lower pattern is formed.
일 실시예에 의한 박막 증착 장치는 내부에 플라즈마를 발생시켜 기판을 처리하는 처리 공간이 형성되는 챔버, 챔버 내부로 공정 가스를 분사하기 위한 가스 공급 장치. 가스 공급 장치와 대향하도록 설치되고 상부에 기판이 안착되는 서셉터 및 가스 공급 장치와 연결되어 고주파 RF 전원을 제공하는 전원 공급 및 정합부를 포함하고, 처리 대상 기판이 제공됨에 따라, 제 1 소스 가스를 기판 상에 흡착시키고 제 1 소스 가스를 플라즈마에 의해 환원시키는 환원공정 이후 제 2 소스 가스를 공급하여 성막 공정을 수행하며, 환원 공정을 포함하는 적어도 일부 구간에 환원 가스를 공급하도록 구성될 수 있다.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDBwLChILEosKS1WSMxLUfBNLcnIT1FIyy9ScEktyC_OLMnMz1PIT1MIycjMU3DLzMnlYWBNS8wpTuWF0twMym6uIc4eukDl8anFBYnJqXmpJfHeQUYGRoYGBqamxiYWjsbEqQIAvXMraQ</recordid><startdate>20210517</startdate><enddate>20210517</enddate><creator>SEO KYOUNG CHEUN</creator><creator>JO GA EUN</creator><creator>PYUN SEUNG CHEOL</creator><creator>RYU HUI SEONG</creator><creator>KIM DAE KYU</creator><scope>EVB</scope></search><sort><creationdate>20210517</creationdate><title>Apparatus and Method for Deposition of Thin Film</title><author>SEO KYOUNG CHEUN ; JO GA EUN ; PYUN SEUNG CHEOL ; RYU HUI SEONG ; KIM DAE KYU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20210055348A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2021</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>SEO KYOUNG CHEUN</creatorcontrib><creatorcontrib>JO GA EUN</creatorcontrib><creatorcontrib>PYUN SEUNG CHEOL</creatorcontrib><creatorcontrib>RYU HUI SEONG</creatorcontrib><creatorcontrib>KIM DAE KYU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SEO KYOUNG CHEUN</au><au>JO GA EUN</au><au>PYUN SEUNG CHEOL</au><au>RYU HUI SEONG</au><au>KIM DAE KYU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Apparatus and Method for Deposition of Thin Film</title><date>2021-05-17</date><risdate>2021</risdate><abstract>A device for depositing a thin film according to one embodiment comprises: a chamber wherein a processing space for processing a substrate by generating plasma therein is formed; a gas supply device that injects process gas into the chamber; a susceptor installed so as to face the gas supply device and on which the substrate is mounted; and a power supply and matching part that connects to the gas supply device to provide a high-frequency RF power. As a substrate to be processed is provided, the present invention may be configured to supply a reducing gas to at least a part of a section including a reduction process by adsorbing a first source gas onto the substrate, and performing a film forming process by supplying a second source gas after the reduction process of reducing the first source gas by a plasma. Therefore, the present invention is capable of allowing the thin film having a uniform thickness and a dense film quality to be formed on the substrate on which a lower pattern is formed.
일 실시예에 의한 박막 증착 장치는 내부에 플라즈마를 발생시켜 기판을 처리하는 처리 공간이 형성되는 챔버, 챔버 내부로 공정 가스를 분사하기 위한 가스 공급 장치. 가스 공급 장치와 대향하도록 설치되고 상부에 기판이 안착되는 서셉터 및 가스 공급 장치와 연결되어 고주파 RF 전원을 제공하는 전원 공급 및 정합부를 포함하고, 처리 대상 기판이 제공됨에 따라, 제 1 소스 가스를 기판 상에 흡착시키고 제 1 소스 가스를 플라즈마에 의해 환원시키는 환원공정 이후 제 2 소스 가스를 공급하여 성막 공정을 수행하며, 환원 공정을 포함하는 적어도 일부 구간에 환원 가스를 공급하도록 구성될 수 있다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Apparatus and Method for Deposition of Thin Film |
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