METHOD AND APPARATUS FOR REDUCING METAL OXIDES ON A METAL SEED LAYER
Disclosed are a method and an apparatus for reducing a metal oxide surface to a modified metal surface. The metal oxide surface is exposed to remote plasma, so that the metal oxide surface on a substrate is reduced to a pure metal, and the metal is reflowed. A remote plasma device is configured to t...
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| creator | DUNCAN JAMES E SPURLIN TIGHE A LAU STEPHEN REID JONATHAN D SINGHAL DURGALAKSHMI LAMBERT DARCY E STOWELL MARSHALL PORTER DAVID ANTONELLI GEORGE ANDREW DOUBINA NATALIA V |
| description | Disclosed are a method and an apparatus for reducing a metal oxide surface to a modified metal surface. The metal oxide surface is exposed to remote plasma, so that the metal oxide surface on a substrate is reduced to a pure metal, and the metal is reflowed. A remote plasma device is configured to treat the metal oxide surface and to cool, load/unload, and move the substrate within a single stand-alone device. The remote plasma device includes a processing chamber and a controller, wherein the controller is configured to: provide the substrate having a metal seed layer in the processing chamber; form the remote plasma of reducing gas species, in which the remote plasma includes radicals, ions, and/or ultraviolet radiation from the reducing gas species; and expose the metal seed layer of the substrate to the remote plasma so that a metal oxide in the metal seed layer is reduced to a metal, and the metal is reflowed.
금속 산화물 표면을 개질된 (modified) 금속 표면으로 환원시키기 위한 방법 및 장치가 개시된다. 금속 산화물 표면을 원격 플라즈마에 노출시킴으로써, 기판 상의 금속 산화물 표면이 순수 금속으로 환원되고 금속이 리플로우될 수 있다. 원격 플라즈마 장치가 금속 산화물 표면을 처리할 뿐만 아니라 단일의 단독형 장치 내에서 기판을 냉각, 로딩/언로딩 및 이동시킬 수 있다. 원격 플라즈마 장치는 프로세싱 챔버 및 제어기를 포함하며, 제어기는 금속 시드 층을 갖는 기판을 프로세싱 챔버 내에 제공하며 환원 가스 종들의 원격 플라즈마━상기 원격 플라즈마는 환원 가스 종들로부터의 라디칼, 이온 및/또는 자외 방사선을 포함함━를 형성하고, 금속 시드 층의 금속 산화물이 금속으로 환원되고 금속이 리플로우되도록 기판의 금속 시드 층을 상기 원격 플라즈마에 노출시키도록 구성된다. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20210053843A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20210053843A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20210053843A3</originalsourceid><addsrcrecordid>eNrjZHDxdQ3x8HdRcPQD4oAAxyDHkNBgBTf_IIUgV5dQZ08_dwWgCkcfBf8ITxfXYAV_PwVHqEiwq6uLgo9jpGsQDwNrWmJOcSovlOZmUHZzDXH20E0tyI9PLS5ITE7NSy2J9w4yMjAyNDAwNbYwMXY0Jk4VAMSgLAo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD AND APPARATUS FOR REDUCING METAL OXIDES ON A METAL SEED LAYER</title><source>esp@cenet</source><creator>DUNCAN JAMES E ; SPURLIN TIGHE A ; LAU STEPHEN ; REID JONATHAN D ; SINGHAL DURGALAKSHMI ; LAMBERT DARCY E ; STOWELL MARSHALL ; PORTER DAVID ; ANTONELLI GEORGE ANDREW ; DOUBINA NATALIA V</creator><creatorcontrib>DUNCAN JAMES E ; SPURLIN TIGHE A ; LAU STEPHEN ; REID JONATHAN D ; SINGHAL DURGALAKSHMI ; LAMBERT DARCY E ; STOWELL MARSHALL ; PORTER DAVID ; ANTONELLI GEORGE ANDREW ; DOUBINA NATALIA V</creatorcontrib><description>Disclosed are a method and an apparatus for reducing a metal oxide surface to a modified metal surface. The metal oxide surface is exposed to remote plasma, so that the metal oxide surface on a substrate is reduced to a pure metal, and the metal is reflowed. A remote plasma device is configured to treat the metal oxide surface and to cool, load/unload, and move the substrate within a single stand-alone device. The remote plasma device includes a processing chamber and a controller, wherein the controller is configured to: provide the substrate having a metal seed layer in the processing chamber; form the remote plasma of reducing gas species, in which the remote plasma includes radicals, ions, and/or ultraviolet radiation from the reducing gas species; and expose the metal seed layer of the substrate to the remote plasma so that a metal oxide in the metal seed layer is reduced to a metal, and the metal is reflowed.
금속 산화물 표면을 개질된 (modified) 금속 표면으로 환원시키기 위한 방법 및 장치가 개시된다. 금속 산화물 표면을 원격 플라즈마에 노출시킴으로써, 기판 상의 금속 산화물 표면이 순수 금속으로 환원되고 금속이 리플로우될 수 있다. 원격 플라즈마 장치가 금속 산화물 표면을 처리할 뿐만 아니라 단일의 단독형 장치 내에서 기판을 냉각, 로딩/언로딩 및 이동시킬 수 있다. 원격 플라즈마 장치는 프로세싱 챔버 및 제어기를 포함하며, 제어기는 금속 시드 층을 갖는 기판을 프로세싱 챔버 내에 제공하며 환원 가스 종들의 원격 플라즈마━상기 원격 플라즈마는 환원 가스 종들로부터의 라디칼, 이온 및/또는 자외 방사선을 포함함━를 형성하고, 금속 시드 층의 금속 산화물이 금속으로 환원되고 금속이 리플로우되도록 기판의 금속 시드 층을 상기 원격 플라즈마에 노출시키도록 구성된다.</description><language>eng ; kor</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210512&DB=EPODOC&CC=KR&NR=20210053843A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210512&DB=EPODOC&CC=KR&NR=20210053843A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DUNCAN JAMES E</creatorcontrib><creatorcontrib>SPURLIN TIGHE A</creatorcontrib><creatorcontrib>LAU STEPHEN</creatorcontrib><creatorcontrib>REID JONATHAN D</creatorcontrib><creatorcontrib>SINGHAL DURGALAKSHMI</creatorcontrib><creatorcontrib>LAMBERT DARCY E</creatorcontrib><creatorcontrib>STOWELL MARSHALL</creatorcontrib><creatorcontrib>PORTER DAVID</creatorcontrib><creatorcontrib>ANTONELLI GEORGE ANDREW</creatorcontrib><creatorcontrib>DOUBINA NATALIA V</creatorcontrib><title>METHOD AND APPARATUS FOR REDUCING METAL OXIDES ON A METAL SEED LAYER</title><description>Disclosed are a method and an apparatus for reducing a metal oxide surface to a modified metal surface. The metal oxide surface is exposed to remote plasma, so that the metal oxide surface on a substrate is reduced to a pure metal, and the metal is reflowed. A remote plasma device is configured to treat the metal oxide surface and to cool, load/unload, and move the substrate within a single stand-alone device. The remote plasma device includes a processing chamber and a controller, wherein the controller is configured to: provide the substrate having a metal seed layer in the processing chamber; form the remote plasma of reducing gas species, in which the remote plasma includes radicals, ions, and/or ultraviolet radiation from the reducing gas species; and expose the metal seed layer of the substrate to the remote plasma so that a metal oxide in the metal seed layer is reduced to a metal, and the metal is reflowed.
금속 산화물 표면을 개질된 (modified) 금속 표면으로 환원시키기 위한 방법 및 장치가 개시된다. 금속 산화물 표면을 원격 플라즈마에 노출시킴으로써, 기판 상의 금속 산화물 표면이 순수 금속으로 환원되고 금속이 리플로우될 수 있다. 원격 플라즈마 장치가 금속 산화물 표면을 처리할 뿐만 아니라 단일의 단독형 장치 내에서 기판을 냉각, 로딩/언로딩 및 이동시킬 수 있다. 원격 플라즈마 장치는 프로세싱 챔버 및 제어기를 포함하며, 제어기는 금속 시드 층을 갖는 기판을 프로세싱 챔버 내에 제공하며 환원 가스 종들의 원격 플라즈마━상기 원격 플라즈마는 환원 가스 종들로부터의 라디칼, 이온 및/또는 자외 방사선을 포함함━를 형성하고, 금속 시드 층의 금속 산화물이 금속으로 환원되고 금속이 리플로우되도록 기판의 금속 시드 층을 상기 원격 플라즈마에 노출시키도록 구성된다.</description><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDxdQ3x8HdRcPQD4oAAxyDHkNBgBTf_IIUgV5dQZ08_dwWgCkcfBf8ITxfXYAV_PwVHqEiwq6uLgo9jpGsQDwNrWmJOcSovlOZmUHZzDXH20E0tyI9PLS5ITE7NSy2J9w4yMjAyNDAwNbYwMXY0Jk4VAMSgLAo</recordid><startdate>20210512</startdate><enddate>20210512</enddate><creator>DUNCAN JAMES E</creator><creator>SPURLIN TIGHE A</creator><creator>LAU STEPHEN</creator><creator>REID JONATHAN D</creator><creator>SINGHAL DURGALAKSHMI</creator><creator>LAMBERT DARCY E</creator><creator>STOWELL MARSHALL</creator><creator>PORTER DAVID</creator><creator>ANTONELLI GEORGE ANDREW</creator><creator>DOUBINA NATALIA V</creator><scope>EVB</scope></search><sort><creationdate>20210512</creationdate><title>METHOD AND APPARATUS FOR REDUCING METAL OXIDES ON A METAL SEED LAYER</title><author>DUNCAN JAMES E ; SPURLIN TIGHE A ; LAU STEPHEN ; REID JONATHAN D ; SINGHAL DURGALAKSHMI ; LAMBERT DARCY E ; STOWELL MARSHALL ; PORTER DAVID ; ANTONELLI GEORGE ANDREW ; DOUBINA NATALIA V</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20210053843A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2021</creationdate><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>DUNCAN JAMES E</creatorcontrib><creatorcontrib>SPURLIN TIGHE A</creatorcontrib><creatorcontrib>LAU STEPHEN</creatorcontrib><creatorcontrib>REID JONATHAN D</creatorcontrib><creatorcontrib>SINGHAL DURGALAKSHMI</creatorcontrib><creatorcontrib>LAMBERT DARCY E</creatorcontrib><creatorcontrib>STOWELL MARSHALL</creatorcontrib><creatorcontrib>PORTER DAVID</creatorcontrib><creatorcontrib>ANTONELLI GEORGE ANDREW</creatorcontrib><creatorcontrib>DOUBINA NATALIA V</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DUNCAN JAMES E</au><au>SPURLIN TIGHE A</au><au>LAU STEPHEN</au><au>REID JONATHAN D</au><au>SINGHAL DURGALAKSHMI</au><au>LAMBERT DARCY E</au><au>STOWELL MARSHALL</au><au>PORTER DAVID</au><au>ANTONELLI GEORGE ANDREW</au><au>DOUBINA NATALIA V</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD AND APPARATUS FOR REDUCING METAL OXIDES ON A METAL SEED LAYER</title><date>2021-05-12</date><risdate>2021</risdate><abstract>Disclosed are a method and an apparatus for reducing a metal oxide surface to a modified metal surface. The metal oxide surface is exposed to remote plasma, so that the metal oxide surface on a substrate is reduced to a pure metal, and the metal is reflowed. A remote plasma device is configured to treat the metal oxide surface and to cool, load/unload, and move the substrate within a single stand-alone device. The remote plasma device includes a processing chamber and a controller, wherein the controller is configured to: provide the substrate having a metal seed layer in the processing chamber; form the remote plasma of reducing gas species, in which the remote plasma includes radicals, ions, and/or ultraviolet radiation from the reducing gas species; and expose the metal seed layer of the substrate to the remote plasma so that a metal oxide in the metal seed layer is reduced to a metal, and the metal is reflowed.
금속 산화물 표면을 개질된 (modified) 금속 표면으로 환원시키기 위한 방법 및 장치가 개시된다. 금속 산화물 표면을 원격 플라즈마에 노출시킴으로써, 기판 상의 금속 산화물 표면이 순수 금속으로 환원되고 금속이 리플로우될 수 있다. 원격 플라즈마 장치가 금속 산화물 표면을 처리할 뿐만 아니라 단일의 단독형 장치 내에서 기판을 냉각, 로딩/언로딩 및 이동시킬 수 있다. 원격 플라즈마 장치는 프로세싱 챔버 및 제어기를 포함하며, 제어기는 금속 시드 층을 갖는 기판을 프로세싱 챔버 내에 제공하며 환원 가스 종들의 원격 플라즈마━상기 원격 플라즈마는 환원 가스 종들로부터의 라디칼, 이온 및/또는 자외 방사선을 포함함━를 형성하고, 금속 시드 층의 금속 산화물이 금속으로 환원되고 금속이 리플로우되도록 기판의 금속 시드 층을 상기 원격 플라즈마에 노출시키도록 구성된다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHOD AND APPARATUS FOR REDUCING METAL OXIDES ON A METAL SEED LAYER |
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