PLASMA PROCESSING APPARATUS

According to one embodiment of the present invention, a plasma processing device capable of maintaining a constant angle of incident of ions in an edge region of a wafer even when a focus ring is consumed comprises: a lower electrode supporting a wafer; a focus ring disposed to surround the edge of...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: JEONG KYEONG SEOK, PARK SUNG MOON, LIM SEUNG KYU, HIRANO YOSHIHISA, NOH YOUNG JIN, CHOI HYUNG KYU, LEE JUN SOO, KIM JAE HOON
Format: Patent
Sprache:eng ; kor
Schlagworte:
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