LOW POWER CYCLE TO CYCLE BIT TRANSFER IN GATE DRIVERS
A gate driver includes: a high-side region which operates in a first voltage domain; a low-side region which operates in a second voltage domain lower than the first voltage domain; a termination region interposed between the high-side region and the low-side region and configured to isolate the fir...
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creator | MORINI SERGIO GRASSO MASSIMO PAGANINI AMEDEO RESPIGO DAVIDE |
description | A gate driver includes: a high-side region which operates in a first voltage domain; a low-side region which operates in a second voltage domain lower than the first voltage domain; a termination region interposed between the high-side region and the low-side region and configured to isolate the first voltage domain from the second voltage domain; a high-side gate driver disposed in the high-side region and configured to drive a high-side power transistor; a low-side gate driver disposed in the low-side region and configured to drive a low-side power transistor; and a plurality of termination diodes disposed in the termination region and configured to transmit information bits between the high-side region and the low-side region, where each of the plurality of termination diodes includes an anode coupled to the low-side region and a cathode coupled to the high-side region.
게이트 드라이버는 제1 전압 도메인에서 동작하는 하이측 영역, 제1 전압 도메인보다 더 낮은 제2 전압 도메인에서 동작하는 로우측 영역, 하이측 영역과 로우측 영역 사이에 개재되고 제2 전압 도메인으로부터 제1 전압 도메인을 격리시키도록 구성되는 종단 영역, 하이측 영역에 배치되고 하이측 전력 트랜지스터를 구동하도록 구성되는 하이측 게이트 드라이버, 로우측 영역에 배치되고 로우측 전력 트랜지스터를 구동하도록 구성되는 로우측 게이트 드라이버, 및 종단 영역에 배치되고 하이측 영역과 로우측 영역 사이에 정보 비트들을 송신하도록 구성되는 복수의 종단 다이오드들을 포함하며, 복수의 종단 다이오드들 중 각각의 종단 다이오드는 로우측 영역에 커플링되는 애노드와 하이측 영역에 커플링되는 캐소드를 포함한다. |
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게이트 드라이버는 제1 전압 도메인에서 동작하는 하이측 영역, 제1 전압 도메인보다 더 낮은 제2 전압 도메인에서 동작하는 로우측 영역, 하이측 영역과 로우측 영역 사이에 개재되고 제2 전압 도메인으로부터 제1 전압 도메인을 격리시키도록 구성되는 종단 영역, 하이측 영역에 배치되고 하이측 전력 트랜지스터를 구동하도록 구성되는 하이측 게이트 드라이버, 로우측 영역에 배치되고 로우측 전력 트랜지스터를 구동하도록 구성되는 로우측 게이트 드라이버, 및 종단 영역에 배치되고 하이측 영역과 로우측 영역 사이에 정보 비트들을 송신하도록 구성되는 복수의 종단 다이오드들을 포함하며, 복수의 종단 다이오드들 중 각각의 종단 다이오드는 로우측 영역에 커플링되는 애노드와 하이측 영역에 커플링되는 캐소드를 포함한다.</description><language>eng ; kor</language><subject>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS ; BASIC ELECTRONIC CIRCUITRY ; CONTROL OR REGULATION THEREOF ; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER ; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ; ELECTRICITY ; GENERATION ; PULSE TECHNIQUE</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200805&DB=EPODOC&CC=KR&NR=20200093454A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200805&DB=EPODOC&CC=KR&NR=20200093454A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MORINI SERGIO</creatorcontrib><creatorcontrib>GRASSO MASSIMO</creatorcontrib><creatorcontrib>PAGANINI AMEDEO</creatorcontrib><creatorcontrib>RESPIGO DAVIDE</creatorcontrib><title>LOW POWER CYCLE TO CYCLE BIT TRANSFER IN GATE DRIVERS</title><description>A gate driver includes: a high-side region which operates in a first voltage domain; a low-side region which operates in a second voltage domain lower than the first voltage domain; a termination region interposed between the high-side region and the low-side region and configured to isolate the first voltage domain from the second voltage domain; a high-side gate driver disposed in the high-side region and configured to drive a high-side power transistor; a low-side gate driver disposed in the low-side region and configured to drive a low-side power transistor; and a plurality of termination diodes disposed in the termination region and configured to transmit information bits between the high-side region and the low-side region, where each of the plurality of termination diodes includes an anode coupled to the low-side region and a cathode coupled to the high-side region.
게이트 드라이버는 제1 전압 도메인에서 동작하는 하이측 영역, 제1 전압 도메인보다 더 낮은 제2 전압 도메인에서 동작하는 로우측 영역, 하이측 영역과 로우측 영역 사이에 개재되고 제2 전압 도메인으로부터 제1 전압 도메인을 격리시키도록 구성되는 종단 영역, 하이측 영역에 배치되고 하이측 전력 트랜지스터를 구동하도록 구성되는 하이측 게이트 드라이버, 로우측 영역에 배치되고 로우측 전력 트랜지스터를 구동하도록 구성되는 로우측 게이트 드라이버, 및 종단 영역에 배치되고 하이측 영역과 로우측 영역 사이에 정보 비트들을 송신하도록 구성되는 복수의 종단 다이오드들을 포함하며, 복수의 종단 다이오드들 중 각각의 종단 다이오드는 로우측 영역에 커플링되는 애노드와 하이측 영역에 커플링되는 캐소드를 포함한다.</description><subject>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>CONTROL OR REGULATION THEREOF</subject><subject>CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER</subject><subject>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</subject><subject>ELECTRICITY</subject><subject>GENERATION</subject><subject>PULSE TECHNIQUE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD18Q9XCPAPdw1ScI509nFVCPGHMpw8QxRCghz9gt2Acp5-Cu6OIa4KLkGeYa5BwTwMrGmJOcWpvFCam0HZzTXE2UM3tSA_PrW4IDE5NS-1JN47yMjAyMDAwNLYxNTE0Zg4VQBmBigv</recordid><startdate>20200805</startdate><enddate>20200805</enddate><creator>MORINI SERGIO</creator><creator>GRASSO MASSIMO</creator><creator>PAGANINI AMEDEO</creator><creator>RESPIGO DAVIDE</creator><scope>EVB</scope></search><sort><creationdate>20200805</creationdate><title>LOW POWER CYCLE TO CYCLE BIT TRANSFER IN GATE DRIVERS</title><author>MORINI SERGIO ; GRASSO MASSIMO ; PAGANINI AMEDEO ; RESPIGO DAVIDE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20200093454A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2020</creationdate><topic>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>CONTROL OR REGULATION THEREOF</topic><topic>CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER</topic><topic>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</topic><topic>ELECTRICITY</topic><topic>GENERATION</topic><topic>PULSE TECHNIQUE</topic><toplevel>online_resources</toplevel><creatorcontrib>MORINI SERGIO</creatorcontrib><creatorcontrib>GRASSO MASSIMO</creatorcontrib><creatorcontrib>PAGANINI AMEDEO</creatorcontrib><creatorcontrib>RESPIGO DAVIDE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MORINI SERGIO</au><au>GRASSO MASSIMO</au><au>PAGANINI AMEDEO</au><au>RESPIGO DAVIDE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LOW POWER CYCLE TO CYCLE BIT TRANSFER IN GATE DRIVERS</title><date>2020-08-05</date><risdate>2020</risdate><abstract>A gate driver includes: a high-side region which operates in a first voltage domain; a low-side region which operates in a second voltage domain lower than the first voltage domain; a termination region interposed between the high-side region and the low-side region and configured to isolate the first voltage domain from the second voltage domain; a high-side gate driver disposed in the high-side region and configured to drive a high-side power transistor; a low-side gate driver disposed in the low-side region and configured to drive a low-side power transistor; and a plurality of termination diodes disposed in the termination region and configured to transmit information bits between the high-side region and the low-side region, where each of the plurality of termination diodes includes an anode coupled to the low-side region and a cathode coupled to the high-side region.
게이트 드라이버는 제1 전압 도메인에서 동작하는 하이측 영역, 제1 전압 도메인보다 더 낮은 제2 전압 도메인에서 동작하는 로우측 영역, 하이측 영역과 로우측 영역 사이에 개재되고 제2 전압 도메인으로부터 제1 전압 도메인을 격리시키도록 구성되는 종단 영역, 하이측 영역에 배치되고 하이측 전력 트랜지스터를 구동하도록 구성되는 하이측 게이트 드라이버, 로우측 영역에 배치되고 로우측 전력 트랜지스터를 구동하도록 구성되는 로우측 게이트 드라이버, 및 종단 영역에 배치되고 하이측 영역과 로우측 영역 사이에 정보 비트들을 송신하도록 구성되는 복수의 종단 다이오드들을 포함하며, 복수의 종단 다이오드들 중 각각의 종단 다이오드는 로우측 영역에 커플링되는 애노드와 하이측 영역에 커플링되는 캐소드를 포함한다.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRONIC CIRCUITRY CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRICITY GENERATION PULSE TECHNIQUE |
title | LOW POWER CYCLE TO CYCLE BIT TRANSFER IN GATE DRIVERS |
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