ETCHING SOLUTION METHOD FOR PROCESSING OBJECT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

오르토과요오드산과 암모니아를 함유하고, pH 가 3 이상인, 루테늄을 에칭 처리하기 위한 에칭액. 또, 상기 에칭액을 사용하여, 루테늄을 함유하는 피처리체를 에칭 처리하는 공정을 포함하는, 피처리체의 처리 방법, 그리고 반도체 소자의 제조 방법. A ruthenium etching solution including orthoperiodic acid and ammonia, the pH of the ruthenium etching solution being 3 or higher. In addition, a method for proce...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	OHHASHI TAKUYA, WADA YUKIHISA, SUGAWARA MAI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!