ETCHING SOLUTION METHOD FOR PROCESSING OBJECT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
오르토과요오드산과 암모니아를 함유하고, pH 가 3 이상인, 루테늄을 에칭 처리하기 위한 에칭액. 또, 상기 에칭액을 사용하여, 루테늄을 함유하는 피처리체를 에칭 처리하는 공정을 포함하는, 피처리체의 처리 방법, 그리고 반도체 소자의 제조 방법. A ruthenium etching solution including orthoperiodic acid and ammonia, the pH of the ruthenium etching solution being 3 or higher. In addition, a method for proce...
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creator | OHHASHI TAKUYA WADA YUKIHISA SUGAWARA MAI |
description | 오르토과요오드산과 암모니아를 함유하고, pH 가 3 이상인, 루테늄을 에칭 처리하기 위한 에칭액. 또, 상기 에칭액을 사용하여, 루테늄을 함유하는 피처리체를 에칭 처리하는 공정을 포함하는, 피처리체의 처리 방법, 그리고 반도체 소자의 제조 방법.
A ruthenium etching solution including orthoperiodic acid and ammonia, the pH of the ruthenium etching solution being 3 or higher. In addition, a method for processing an object to be processed including etching an object to be processed including ruthenium, using the ruthenium etching solution, and a method for manufacturing a semiconductor element. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20200075757A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20200075757A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20200075757A3</originalsourceid><addsrcrecordid>eNrjZEhwDXH28PRzVwj29wkN8fT3U_B1DfHwd1Fw8w9SCAjyd3YNDgZJ-zt5uTqHKDj6uSAr8HX0C3VzdA4JDQIb4err6ezv5xLqHAKUc_Vx9XX1C-FhYE1LzClO5YXS3AzKbiA7dVML8uNTiwsSk1PzUkvivYOMDIwMDAzMTYHQ0Zg4VQBzMDSc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ETCHING SOLUTION METHOD FOR PROCESSING OBJECT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT</title><source>esp@cenet</source><creator>OHHASHI TAKUYA ; WADA YUKIHISA ; SUGAWARA MAI</creator><creatorcontrib>OHHASHI TAKUYA ; WADA YUKIHISA ; SUGAWARA MAI</creatorcontrib><description>오르토과요오드산과 암모니아를 함유하고, pH 가 3 이상인, 루테늄을 에칭 처리하기 위한 에칭액. 또, 상기 에칭액을 사용하여, 루테늄을 함유하는 피처리체를 에칭 처리하는 공정을 포함하는, 피처리체의 처리 방법, 그리고 반도체 소자의 제조 방법.
A ruthenium etching solution including orthoperiodic acid and ammonia, the pH of the ruthenium etching solution being 3 or higher. In addition, a method for processing an object to be processed including etching an object to be processed including ruthenium, using the ruthenium etching solution, and a method for manufacturing a semiconductor element.</description><language>eng ; kor</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200626&DB=EPODOC&CC=KR&NR=20200075757A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200626&DB=EPODOC&CC=KR&NR=20200075757A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OHHASHI TAKUYA</creatorcontrib><creatorcontrib>WADA YUKIHISA</creatorcontrib><creatorcontrib>SUGAWARA MAI</creatorcontrib><title>ETCHING SOLUTION METHOD FOR PROCESSING OBJECT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT</title><description>오르토과요오드산과 암모니아를 함유하고, pH 가 3 이상인, 루테늄을 에칭 처리하기 위한 에칭액. 또, 상기 에칭액을 사용하여, 루테늄을 함유하는 피처리체를 에칭 처리하는 공정을 포함하는, 피처리체의 처리 방법, 그리고 반도체 소자의 제조 방법.
A ruthenium etching solution including orthoperiodic acid and ammonia, the pH of the ruthenium etching solution being 3 or higher. In addition, a method for processing an object to be processed including etching an object to be processed including ruthenium, using the ruthenium etching solution, and a method for manufacturing a semiconductor element.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEhwDXH28PRzVwj29wkN8fT3U_B1DfHwd1Fw8w9SCAjyd3YNDgZJ-zt5uTqHKDj6uSAr8HX0C3VzdA4JDQIb4err6ezv5xLqHAKUc_Vx9XX1C-FhYE1LzClO5YXS3AzKbiA7dVML8uNTiwsSk1PzUkvivYOMDIwMDAzMTYHQ0Zg4VQBzMDSc</recordid><startdate>20200626</startdate><enddate>20200626</enddate><creator>OHHASHI TAKUYA</creator><creator>WADA YUKIHISA</creator><creator>SUGAWARA MAI</creator><scope>EVB</scope></search><sort><creationdate>20200626</creationdate><title>ETCHING SOLUTION METHOD FOR PROCESSING OBJECT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT</title><author>OHHASHI TAKUYA ; WADA YUKIHISA ; SUGAWARA MAI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20200075757A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2020</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>OHHASHI TAKUYA</creatorcontrib><creatorcontrib>WADA YUKIHISA</creatorcontrib><creatorcontrib>SUGAWARA MAI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OHHASHI TAKUYA</au><au>WADA YUKIHISA</au><au>SUGAWARA MAI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ETCHING SOLUTION METHOD FOR PROCESSING OBJECT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT</title><date>2020-06-26</date><risdate>2020</risdate><abstract>오르토과요오드산과 암모니아를 함유하고, pH 가 3 이상인, 루테늄을 에칭 처리하기 위한 에칭액. 또, 상기 에칭액을 사용하여, 루테늄을 함유하는 피처리체를 에칭 처리하는 공정을 포함하는, 피처리체의 처리 방법, 그리고 반도체 소자의 제조 방법.
A ruthenium etching solution including orthoperiodic acid and ammonia, the pH of the ruthenium etching solution being 3 or higher. In addition, a method for processing an object to be processed including etching an object to be processed including ruthenium, using the ruthenium etching solution, and a method for manufacturing a semiconductor element.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES |
title | ETCHING SOLUTION METHOD FOR PROCESSING OBJECT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT |
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