ETCHING SOLUTION METHOD FOR PROCESSING OBJECT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

오르토과요오드산과 암모니아를 함유하고, pH 가 3 이상인, 루테늄을 에칭 처리하기 위한 에칭액. 또, 상기 에칭액을 사용하여, 루테늄을 함유하는 피처리체를 에칭 처리하는 공정을 포함하는, 피처리체의 처리 방법, 그리고 반도체 소자의 제조 방법. A ruthenium etching solution including orthoperiodic acid and ammonia, the pH of the ruthenium etching solution being 3 or higher. In addition, a method for proce...

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Hauptverfasser: OHHASHI TAKUYA, WADA YUKIHISA, SUGAWARA MAI
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creator OHHASHI TAKUYA
WADA YUKIHISA
SUGAWARA MAI
description 오르토과요오드산과 암모니아를 함유하고, pH 가 3 이상인, 루테늄을 에칭 처리하기 위한 에칭액. 또, 상기 에칭액을 사용하여, 루테늄을 함유하는 피처리체를 에칭 처리하는 공정을 포함하는, 피처리체의 처리 방법, 그리고 반도체 소자의 제조 방법. A ruthenium etching solution including orthoperiodic acid and ammonia, the pH of the ruthenium etching solution being 3 or higher. In addition, a method for processing an object to be processed including etching an object to be processed including ruthenium, using the ruthenium etching solution, and a method for manufacturing a semiconductor element.
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A ruthenium etching solution including orthoperiodic acid and ammonia, the pH of the ruthenium etching solution being 3 or higher. 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A ruthenium etching solution including orthoperiodic acid and ammonia, the pH of the ruthenium etching solution being 3 or higher. In addition, a method for processing an object to be processed including etching an object to be processed including ruthenium, using the ruthenium etching solution, and a method for manufacturing a semiconductor element.</abstract><oa>free_for_read</oa></addata></record>
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subjects ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
title ETCHING SOLUTION METHOD FOR PROCESSING OBJECT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
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