ESD Electrostatic Discharge Protection Device
The present disclosure relates to an electrostatic discharge (ESB) protection device capable of simultaneously satisfying holding voltage characteristics and trigger voltage characteristics. According to an embodiment of the present disclosure, an ESB protection device comprises: a pad; a diode incl...
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| creator | SONG CHANG SEOK CHOI JOUNG CHEUL |
| description | The present disclosure relates to an electrostatic discharge (ESB) protection device capable of simultaneously satisfying holding voltage characteristics and trigger voltage characteristics. According to an embodiment of the present disclosure, an ESB protection device comprises: a pad; a diode including an anode connected to the pad; a gate ground NMOS (GGNMOS) transistor connected between a cathode and a ground terminal of the diode; and a thyristor generated between the diode and the ground terminal when an ESD current flows from the pad.
ESD 보호 장치에 관한 기술이다. 본 실시예의 ESD 보호 장치는 패드; 상기 패드와 연결되는 애노드를 포함하는 다이오드; 상기 다이오드의 캐소드와 그라운드 터미널 사이에 연결되는 GGNMOS(gate ground NMOS) 트랜지스터; 및 상기 패드로부터 ESD 전류가 유입될 때, 상기 다이오드와 상기 그라운드 터미널 사이에 생성되는 사이리스터를 포함한다. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20200074581A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20200074581A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20200074581A3</originalsourceid><addsrcrecordid>eNrjZNB1DXZRcM1JTS4pyi8uSSzJTFZwySxOzkgsSk9VCCjKLwHKZObnKbiklmUmp_IwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUknjvICMDIwMDA3MTUwtDR2PiVAEAOiEqnQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ESD Electrostatic Discharge Protection Device</title><source>esp@cenet</source><creator>SONG CHANG SEOK ; CHOI JOUNG CHEUL</creator><creatorcontrib>SONG CHANG SEOK ; CHOI JOUNG CHEUL</creatorcontrib><description>The present disclosure relates to an electrostatic discharge (ESB) protection device capable of simultaneously satisfying holding voltage characteristics and trigger voltage characteristics. According to an embodiment of the present disclosure, an ESB protection device comprises: a pad; a diode including an anode connected to the pad; a gate ground NMOS (GGNMOS) transistor connected between a cathode and a ground terminal of the diode; and a thyristor generated between the diode and the ground terminal when an ESD current flows from the pad.
ESD 보호 장치에 관한 기술이다. 본 실시예의 ESD 보호 장치는 패드; 상기 패드와 연결되는 애노드를 포함하는 다이오드; 상기 다이오드의 캐소드와 그라운드 터미널 사이에 연결되는 GGNMOS(gate ground NMOS) 트랜지스터; 및 상기 패드로부터 ESD 전류가 유입될 때, 상기 다이오드와 상기 그라운드 터미널 사이에 생성되는 사이리스터를 포함한다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200625&DB=EPODOC&CC=KR&NR=20200074581A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200625&DB=EPODOC&CC=KR&NR=20200074581A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SONG CHANG SEOK</creatorcontrib><creatorcontrib>CHOI JOUNG CHEUL</creatorcontrib><title>ESD Electrostatic Discharge Protection Device</title><description>The present disclosure relates to an electrostatic discharge (ESB) protection device capable of simultaneously satisfying holding voltage characteristics and trigger voltage characteristics. According to an embodiment of the present disclosure, an ESB protection device comprises: a pad; a diode including an anode connected to the pad; a gate ground NMOS (GGNMOS) transistor connected between a cathode and a ground terminal of the diode; and a thyristor generated between the diode and the ground terminal when an ESD current flows from the pad.
ESD 보호 장치에 관한 기술이다. 본 실시예의 ESD 보호 장치는 패드; 상기 패드와 연결되는 애노드를 포함하는 다이오드; 상기 다이오드의 캐소드와 그라운드 터미널 사이에 연결되는 GGNMOS(gate ground NMOS) 트랜지스터; 및 상기 패드로부터 ESD 전류가 유입될 때, 상기 다이오드와 상기 그라운드 터미널 사이에 생성되는 사이리스터를 포함한다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB1DXZRcM1JTS4pyi8uSSzJTFZwySxOzkgsSk9VCCjKLwHKZObnKbiklmUmp_IwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUknjvICMDIwMDA3MTUwtDR2PiVAEAOiEqnQ</recordid><startdate>20200625</startdate><enddate>20200625</enddate><creator>SONG CHANG SEOK</creator><creator>CHOI JOUNG CHEUL</creator><scope>EVB</scope></search><sort><creationdate>20200625</creationdate><title>ESD Electrostatic Discharge Protection Device</title><author>SONG CHANG SEOK ; CHOI JOUNG CHEUL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20200074581A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SONG CHANG SEOK</creatorcontrib><creatorcontrib>CHOI JOUNG CHEUL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SONG CHANG SEOK</au><au>CHOI JOUNG CHEUL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ESD Electrostatic Discharge Protection Device</title><date>2020-06-25</date><risdate>2020</risdate><abstract>The present disclosure relates to an electrostatic discharge (ESB) protection device capable of simultaneously satisfying holding voltage characteristics and trigger voltage characteristics. According to an embodiment of the present disclosure, an ESB protection device comprises: a pad; a diode including an anode connected to the pad; a gate ground NMOS (GGNMOS) transistor connected between a cathode and a ground terminal of the diode; and a thyristor generated between the diode and the ground terminal when an ESD current flows from the pad.
ESD 보호 장치에 관한 기술이다. 본 실시예의 ESD 보호 장치는 패드; 상기 패드와 연결되는 애노드를 포함하는 다이오드; 상기 다이오드의 캐소드와 그라운드 터미널 사이에 연결되는 GGNMOS(gate ground NMOS) 트랜지스터; 및 상기 패드로부터 ESD 전류가 유입될 때, 상기 다이오드와 상기 그라운드 터미널 사이에 생성되는 사이리스터를 포함한다.</abstract><oa>free_for_read</oa></addata></record> |
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| title | ESD Electrostatic Discharge Protection Device |
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