Magnetic memory device

Disclosed is a magnetic memory device capable of fast switching and low current operation. The magnetic memory device comprises: a buffer layer disposed on a substrate; a magnetic tunnel junction structure disposed on the buffer layer and including a fixed layer structure, a tunnel barrier, and a fr...

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Bibliographische Detailangaben
Hauptverfasser:	KIM JU HYUN, NOH EUN SUN, LEE JOON MYOUNG, LIM WOO CHANG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Disclosed is a magnetic memory device capable of fast switching and low current operation. The magnetic memory device comprises: a buffer layer disposed on a substrate; a magnetic tunnel junction structure disposed on the buffer layer and including a fixed layer structure, a tunnel barrier, and a free layer sequentially disposed on the buffer layer; and an SOT structure disposed on the magnetic tunnel junction structure and including a topological insulator material, wherein the free layer includes a Heusler material. 자기 메모리 장치가 개시된다. 자기 메모리 장치는, 기판 상에 배치되는 버퍼층; 상기 버퍼층 상에 배치되며, 상기 버퍼층 상에 순차적으로 배치되는 고정층 구조물, 터널 배리어, 및 자유층을 포함하는 자기 터널 접합 구조물; 및 상기 자기 터널 접합 구조물 상에 배치되며 토폴로지컬 절연체(topological insulator) 물질을 포함하는 SOT 구조물을 포함하고, 상기 자유층은 호이슬러 물질을 포함한다.