METHOD FOR DETECTING CENTER

An objective of the present invention is to suppress misrecognition of the outer peripheral edge of a wafer when detecting the center of a wafer. In a processing method of the present invention, whenever an area for detection (LS) extending in an X-axis direction is shifted by one pixel in the X-axi...

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Hauptverfasser:	OMORI TAKAFUMI, KOIKE AYAKO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	OMORI TAKAFUMI KOIKE AYAKO
description	An objective of the present invention is to suppress misrecognition of the outer peripheral edge of a wafer when detecting the center of a wafer. In a processing method of the present invention, whenever an area for detection (LS) extending in an X-axis direction is shifted by one pixel in the X-axis direction and the area for detection (LS) is shifted, light and shade values of each pixel of the area for detection (LS) are obtained. In addition, a slope value with respect to an X axis in the distribution of light and shade values is calculated. And then, the outer circumferential coordinates, which are the coordinates of the edge of the wafer, are determined based on the slope value. 본 발명은, 웨이퍼의 중심을 검출할 때, 웨이퍼의 외주 가장자리를 잘못 인식해 버리는 것을 억제하는 것을 목적으로 한다. 본 가공 방법에서는, X축 방향으로 연장되는 검출용 영역(LS)을, X축 방향으로 1화소씩 비켜놓고, 검출용 영역(LS)을 비켜놓을 때마다, 검출용 영역(LS)의 각 화소의 명암치를 취득하고, 또한, 명암치의 분포에 있어서의 X축에 대한 기울기값을 산출한다. 그리고, 이 기울기값에 기초하여, 웨이퍼의 에지의 좌표인 외주 좌표를 결정한다.
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In a processing method of the present invention, whenever an area for detection (LS) extending in an X-axis direction is shifted by one pixel in the X-axis direction and the area for detection (LS) is shifted, light and shade values of each pixel of the area for detection (LS) are obtained. In addition, a slope value with respect to an X axis in the distribution of light and shade values is calculated. 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title	METHOD FOR DETECTING CENTER
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