FILM-FORMING APPARATUS AND FILM-FORMING METHOD
The present invention relates to a film forming apparatus capable of suppressing a change of a film thickness between substrates in regard to a film formation treatment on a plurality of substrates. The film forming apparatus includes: a vacuum container forming a vacuum atmosphere internally, and p...
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| creator | KUWADA HIROTAKA NUNOSHIGE YU FUJII YASUSHI |
| description | The present invention relates to a film forming apparatus capable of suppressing a change of a film thickness between substrates in regard to a film formation treatment on a plurality of substrates. The film forming apparatus includes: a vacuum container forming a vacuum atmosphere internally, and performing a film formation treatment on each of a plurality of substrates; a loading part loading the substrates into the vacuum container while heating the substrates; a shower head including a facing part facing the loading part and a plurality of gas outlets opened on the facing part, and forming a film on the substrates by supplying film formation gas from the gas outlets to the substrates; a cleaning gas supply part supplying cleaning gas for cleaning the inside of the vacuum container when the substrates are not stored in the vacuum container, while the film formation treatment is being performed on each of the substrates; and a nonporous covering film forming the surface of the shower head by covering a component of the shower head at least in the facing part in order to relieve a variation in the reflectivity of heat with respect to the shower head when the film formation gas is supplied to each of the substrates.
복수의 기판에 성막 처리를 행하는 데 있어서, 기판간에 있어서의 막 두께의 변동을 억제하는 것이다. 본 개시의 성막 장치는, 내부에 진공 분위기를 형성하고, 복수의 기판의 각각에 대하여 성막 처리를 행하는 진공 용기와, 상기 진공 용기 내에서 상기 기판을 적재함과 함께 가열하는 적재부와, 상기 적재부에 대향하는 대향부와, 해당 대향부에 개구된 복수의 가스 토출구를 구비하고, 상기 복수의 가스 토출구로부터 상기 기판에 성막 가스를 공급하여 상기 기판에 성막하는 샤워 헤드와, 상기 복수의 기판의 각각에 대하여 상기 성막 처리가 행해지고 있는 동안에, 해당 기판이 상기 진공 용기에 저장되어 있지 않을 때, 해당 진공 용기 내를 클리닝하는 클리닝 가스를 공급하는 클리닝 가스 공급부와, 상기 복수의 기판의 각각에 대하여 상기 성막 가스가 공급될 때의 상기 샤워 헤드에 있어서의 열의 반사율 변동을 완화하기 위해서, 적어도 상기 대향부에서 상기 샤워 헤드를 구성하는 기재를 피복하여 해당 샤워 헤드의 표면을 형성하는 무공질의 피복막을 구비한다. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20200026137A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20200026137A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20200026137A3</originalsourceid><addsrcrecordid>eNrjZNBz8_Tx1XXzD_L19HNXcAwIcAxyDAkNVnD0c1FAkfJ1DfHwd-FhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGRgYGBkZmhsbmjsbEqQIAbfcmcg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>FILM-FORMING APPARATUS AND FILM-FORMING METHOD</title><source>esp@cenet</source><creator>KUWADA HIROTAKA ; NUNOSHIGE YU ; FUJII YASUSHI</creator><creatorcontrib>KUWADA HIROTAKA ; NUNOSHIGE YU ; FUJII YASUSHI</creatorcontrib><description>The present invention relates to a film forming apparatus capable of suppressing a change of a film thickness between substrates in regard to a film formation treatment on a plurality of substrates. The film forming apparatus includes: a vacuum container forming a vacuum atmosphere internally, and performing a film formation treatment on each of a plurality of substrates; a loading part loading the substrates into the vacuum container while heating the substrates; a shower head including a facing part facing the loading part and a plurality of gas outlets opened on the facing part, and forming a film on the substrates by supplying film formation gas from the gas outlets to the substrates; a cleaning gas supply part supplying cleaning gas for cleaning the inside of the vacuum container when the substrates are not stored in the vacuum container, while the film formation treatment is being performed on each of the substrates; and a nonporous covering film forming the surface of the shower head by covering a component of the shower head at least in the facing part in order to relieve a variation in the reflectivity of heat with respect to the shower head when the film formation gas is supplied to each of the substrates.
복수의 기판에 성막 처리를 행하는 데 있어서, 기판간에 있어서의 막 두께의 변동을 억제하는 것이다. 본 개시의 성막 장치는, 내부에 진공 분위기를 형성하고, 복수의 기판의 각각에 대하여 성막 처리를 행하는 진공 용기와, 상기 진공 용기 내에서 상기 기판을 적재함과 함께 가열하는 적재부와, 상기 적재부에 대향하는 대향부와, 해당 대향부에 개구된 복수의 가스 토출구를 구비하고, 상기 복수의 가스 토출구로부터 상기 기판에 성막 가스를 공급하여 상기 기판에 성막하는 샤워 헤드와, 상기 복수의 기판의 각각에 대하여 상기 성막 처리가 행해지고 있는 동안에, 해당 기판이 상기 진공 용기에 저장되어 있지 않을 때, 해당 진공 용기 내를 클리닝하는 클리닝 가스를 공급하는 클리닝 가스 공급부와, 상기 복수의 기판의 각각에 대하여 상기 성막 가스가 공급될 때의 상기 샤워 헤드에 있어서의 열의 반사율 변동을 완화하기 위해서, 적어도 상기 대향부에서 상기 샤워 헤드를 구성하는 기재를 피복하여 해당 샤워 헤드의 표면을 형성하는 무공질의 피복막을 구비한다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200310&DB=EPODOC&CC=KR&NR=20200026137A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200310&DB=EPODOC&CC=KR&NR=20200026137A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KUWADA HIROTAKA</creatorcontrib><creatorcontrib>NUNOSHIGE YU</creatorcontrib><creatorcontrib>FUJII YASUSHI</creatorcontrib><title>FILM-FORMING APPARATUS AND FILM-FORMING METHOD</title><description>The present invention relates to a film forming apparatus capable of suppressing a change of a film thickness between substrates in regard to a film formation treatment on a plurality of substrates. The film forming apparatus includes: a vacuum container forming a vacuum atmosphere internally, and performing a film formation treatment on each of a plurality of substrates; a loading part loading the substrates into the vacuum container while heating the substrates; a shower head including a facing part facing the loading part and a plurality of gas outlets opened on the facing part, and forming a film on the substrates by supplying film formation gas from the gas outlets to the substrates; a cleaning gas supply part supplying cleaning gas for cleaning the inside of the vacuum container when the substrates are not stored in the vacuum container, while the film formation treatment is being performed on each of the substrates; and a nonporous covering film forming the surface of the shower head by covering a component of the shower head at least in the facing part in order to relieve a variation in the reflectivity of heat with respect to the shower head when the film formation gas is supplied to each of the substrates.
복수의 기판에 성막 처리를 행하는 데 있어서, 기판간에 있어서의 막 두께의 변동을 억제하는 것이다. 본 개시의 성막 장치는, 내부에 진공 분위기를 형성하고, 복수의 기판의 각각에 대하여 성막 처리를 행하는 진공 용기와, 상기 진공 용기 내에서 상기 기판을 적재함과 함께 가열하는 적재부와, 상기 적재부에 대향하는 대향부와, 해당 대향부에 개구된 복수의 가스 토출구를 구비하고, 상기 복수의 가스 토출구로부터 상기 기판에 성막 가스를 공급하여 상기 기판에 성막하는 샤워 헤드와, 상기 복수의 기판의 각각에 대하여 상기 성막 처리가 행해지고 있는 동안에, 해당 기판이 상기 진공 용기에 저장되어 있지 않을 때, 해당 진공 용기 내를 클리닝하는 클리닝 가스를 공급하는 클리닝 가스 공급부와, 상기 복수의 기판의 각각에 대하여 상기 성막 가스가 공급될 때의 상기 샤워 헤드에 있어서의 열의 반사율 변동을 완화하기 위해서, 적어도 상기 대향부에서 상기 샤워 헤드를 구성하는 기재를 피복하여 해당 샤워 헤드의 표면을 형성하는 무공질의 피복막을 구비한다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNBz8_Tx1XXzD_L19HNXcAwIcAxyDAkNVnD0c1FAkfJ1DfHwd-FhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGRgYGBkZmhsbmjsbEqQIAbfcmcg</recordid><startdate>20200310</startdate><enddate>20200310</enddate><creator>KUWADA HIROTAKA</creator><creator>NUNOSHIGE YU</creator><creator>FUJII YASUSHI</creator><scope>EVB</scope></search><sort><creationdate>20200310</creationdate><title>FILM-FORMING APPARATUS AND FILM-FORMING METHOD</title><author>KUWADA HIROTAKA ; NUNOSHIGE YU ; FUJII YASUSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20200026137A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>KUWADA HIROTAKA</creatorcontrib><creatorcontrib>NUNOSHIGE YU</creatorcontrib><creatorcontrib>FUJII YASUSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KUWADA HIROTAKA</au><au>NUNOSHIGE YU</au><au>FUJII YASUSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FILM-FORMING APPARATUS AND FILM-FORMING METHOD</title><date>2020-03-10</date><risdate>2020</risdate><abstract>The present invention relates to a film forming apparatus capable of suppressing a change of a film thickness between substrates in regard to a film formation treatment on a plurality of substrates. The film forming apparatus includes: a vacuum container forming a vacuum atmosphere internally, and performing a film formation treatment on each of a plurality of substrates; a loading part loading the substrates into the vacuum container while heating the substrates; a shower head including a facing part facing the loading part and a plurality of gas outlets opened on the facing part, and forming a film on the substrates by supplying film formation gas from the gas outlets to the substrates; a cleaning gas supply part supplying cleaning gas for cleaning the inside of the vacuum container when the substrates are not stored in the vacuum container, while the film formation treatment is being performed on each of the substrates; and a nonporous covering film forming the surface of the shower head by covering a component of the shower head at least in the facing part in order to relieve a variation in the reflectivity of heat with respect to the shower head when the film formation gas is supplied to each of the substrates.
복수의 기판에 성막 처리를 행하는 데 있어서, 기판간에 있어서의 막 두께의 변동을 억제하는 것이다. 본 개시의 성막 장치는, 내부에 진공 분위기를 형성하고, 복수의 기판의 각각에 대하여 성막 처리를 행하는 진공 용기와, 상기 진공 용기 내에서 상기 기판을 적재함과 함께 가열하는 적재부와, 상기 적재부에 대향하는 대향부와, 해당 대향부에 개구된 복수의 가스 토출구를 구비하고, 상기 복수의 가스 토출구로부터 상기 기판에 성막 가스를 공급하여 상기 기판에 성막하는 샤워 헤드와, 상기 복수의 기판의 각각에 대하여 상기 성막 처리가 행해지고 있는 동안에, 해당 기판이 상기 진공 용기에 저장되어 있지 않을 때, 해당 진공 용기 내를 클리닝하는 클리닝 가스를 공급하는 클리닝 가스 공급부와, 상기 복수의 기판의 각각에 대하여 상기 성막 가스가 공급될 때의 상기 샤워 헤드에 있어서의 열의 반사율 변동을 완화하기 위해서, 적어도 상기 대향부에서 상기 샤워 헤드를 구성하는 기재를 피복하여 해당 샤워 헤드의 표면을 형성하는 무공질의 피복막을 구비한다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | FILM-FORMING APPARATUS AND FILM-FORMING METHOD |
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