산화물 소결체 및 스퍼터링 타깃

본 발명은, 금속 원소가 In, Ga, Zn 및 Sn으로 구성되고, GaInSnO, ZnGaO및 InGaZnO를 포함하는 산화물 소결체이며, 산화물 소결체에 포함되는 산소를 제외한 전체 금속 원소에 대한, In, Ga, Zn 및 Sn의 함유량의 비율(원자％)을, 각각 [In], [Ga], [Zn] 및 [Sn]이라 하였을 때, 식 (1) 내지 (3)을 만족시키는 산화물 소결체에 관한 것이다. [Ga]≥37원자％...(1), [Sn]≤15원자％...(2), [Ga]/([In]＋[Zn])≥0.7...(3). 본 발명에 따르면, Ga가 다...

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Bibliographische Detailangaben
Hauptverfasser:	TAO YUKI, NISHIYAMA KOHEI
Format:	Patent
Sprache:	kor
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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