Ge Ge Layered Ge manufacturing method thereof exfoliated Ge nanosheet therefrom and electrode for lithium ion batteries containing the same
The present invention relates to a layered Ge, a manufacturing method thereof and a Ge nanosheet exfoliated therefrom and, more specifically, to a layered Ge having a two-dimensional crystalline structure unlike a traditional bulk Ge, having excellent exfoliation properties, being easily exfoliated...
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| creator | LEE SOO UN SHIM WOO YOUNG HYESOO KIM |
| description | The present invention relates to a layered Ge, a manufacturing method thereof and a Ge nanosheet exfoliated therefrom and, more specifically, to a layered Ge having a two-dimensional crystalline structure unlike a traditional bulk Ge, having excellent exfoliation properties, being easily exfoliated into a nanosheet form and having wide surface area and excellent ion capacity, a manufacturing method thereof, a Ge nanosheet exfoliated therefrom and an electrode for lithium ion batteries containing the same.
본 발명은 층상형 Ge, 이의 제조 방법 및 이로부터 박리된 Ge 나노시트에 관한 것이며, 더욱 상세하게는 종래의 벌크형 Ge와 달리 2차원 결정 구조를 갖고, 박리성이 우수하여 나노시트의 형태로 박리하기 용이하며, 표면적이 넓고 우수한 이온 용량을 갖는 층상형 Ge, 이의 제조 방법 및 이로부터 박리된 Ge 나노시트 및 이를 포함하는 리튬이온전지용 전극에 관한 것이다. |
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본 발명은 층상형 Ge, 이의 제조 방법 및 이로부터 박리된 Ge 나노시트에 관한 것이며, 더욱 상세하게는 종래의 벌크형 Ge와 달리 2차원 결정 구조를 갖고, 박리성이 우수하여 나노시트의 형태로 박리하기 용이하며, 표면적이 넓고 우수한 이온 용량을 갖는 층상형 Ge, 이의 제조 방법 및 이로부터 박리된 Ge 나노시트 및 이를 포함하는 리튬이온전지용 전극에 관한 것이다.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjb0KwkAQhNNYiPoOC9ZColhYivgDWom9rMmcOcjthrsN6DP40kb0AYSBGfhmmGH22oN6nfiJiOoTA0vnuLQuerlTgNVakdU9Vkd4OG0827cqLJpqwL7cRQ3EUhEalBa1AjmN1HirfRfIq9CNzRA9EpUqxl4-H_2YEgeMs4HjJmHy81E23W0vm8MMrV6RWi4hsOvxPM-LVV4s5sUyXy_-a70BshNN8w</recordid><startdate>20191127</startdate><enddate>20191127</enddate><creator>LEE SOO UN</creator><creator>SHIM WOO YOUNG</creator><creator>HYESOO KIM</creator><scope>EVB</scope></search><sort><creationdate>20191127</creationdate><title>Ge Ge Layered Ge manufacturing method thereof exfoliated Ge nanosheet therefrom and electrode for lithium ion batteries containing the same</title><author>LEE SOO UN ; SHIM WOO YOUNG ; HYESOO KIM</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20190132150A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2019</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE SOO UN</creatorcontrib><creatorcontrib>SHIM WOO YOUNG</creatorcontrib><creatorcontrib>HYESOO KIM</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE SOO UN</au><au>SHIM WOO YOUNG</au><au>HYESOO KIM</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Ge Ge Layered Ge manufacturing method thereof exfoliated Ge nanosheet therefrom and electrode for lithium ion batteries containing the same</title><date>2019-11-27</date><risdate>2019</risdate><abstract>The present invention relates to a layered Ge, a manufacturing method thereof and a Ge nanosheet exfoliated therefrom and, more specifically, to a layered Ge having a two-dimensional crystalline structure unlike a traditional bulk Ge, having excellent exfoliation properties, being easily exfoliated into a nanosheet form and having wide surface area and excellent ion capacity, a manufacturing method thereof, a Ge nanosheet exfoliated therefrom and an electrode for lithium ion batteries containing the same.
본 발명은 층상형 Ge, 이의 제조 방법 및 이로부터 박리된 Ge 나노시트에 관한 것이며, 더욱 상세하게는 종래의 벌크형 Ge와 달리 2차원 결정 구조를 갖고, 박리성이 우수하여 나노시트의 형태로 박리하기 용이하며, 표면적이 넓고 우수한 이온 용량을 갖는 층상형 Ge, 이의 제조 방법 및 이로부터 박리된 Ge 나노시트 및 이를 포함하는 리튬이온전지용 전극에 관한 것이다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Ge Ge Layered Ge manufacturing method thereof exfoliated Ge nanosheet therefrom and electrode for lithium ion batteries containing the same |
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