산화물 소결체 및 스퍼터링 타깃
본 발명은, 금속 원소가 In, Ga, Zn 및 Sn으로 구성되고, InGaO(ZnO)(m은 1 내지 6의 정수)으로 표시되는 육방정 층상 화합물을 포함하는 산화물 소결체이며, 상기 산화물 소결체에 포함되는 산소를 제외한 전체 금속 원소에 대한, In, Zn 및 Sn의 함유량의 비율(원자％)을, 각각 [In], [Zn] 및 [Sn]이라 하였을 때, 식 (1) 내지 (3)을 만족시키는 산화물 소결체에 관한 것이다. [Zn]≥40원자％...(1), [In]≤15원자％...(2), [Sn]≤4원자％...(3). 본 발명에 따르면, Zn이...
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| creator | TAO YUKI NISHIYAMA KOHEI |
| description | 본 발명은, 금속 원소가 In, Ga, Zn 및 Sn으로 구성되고, InGaO(ZnO)(m은 1 내지 6의 정수)으로 표시되는 육방정 층상 화합물을 포함하는 산화물 소결체이며, 상기 산화물 소결체에 포함되는 산소를 제외한 전체 금속 원소에 대한, In, Zn 및 Sn의 함유량의 비율(원자％)을, 각각 [In], [Zn] 및 [Sn]이라 하였을 때, 식 (1) 내지 (3)을 만족시키는 산화물 소결체에 관한 것이다. [Zn]≥40원자％...(1), [In]≤15원자％...(2), [Sn]≤4원자％...(3). 본 발명에 따르면, Zn이 다량으로 첨가된 In-Ga-Zn-Sn계 산화물 소결체에 있어서도, 본딩 시의 균열의 발생을 억제할 수 있다.
An oxide sintered body having metal elements composed of In, Ga, Zn and Sn and containing a hexagonal layered compound represented by InGaO3(ZnO)m (m is an integer of 1 to 6). When ratios (atomic %) of contents of In, Zn and Sn to all metal elements excluding oxygen contained in the oxide sintered body are taken as [In], [Zn] and [Sn], respectively, the relations [Zn]≥40 atomic %, [In]≤15 atomic %, [Sn]≤4 atomic % are satisfied. |
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An oxide sintered body having metal elements composed of In, Ga, Zn and Sn and containing a hexagonal layered compound represented by InGaO3(ZnO)m (m is an integer of 1 to 6). When ratios (atomic %) of contents of In, Zn and Sn to all metal elements excluding oxygen contained in the oxide sintered body are taken as [In], [Zn] and [Sn], respectively, the relations [Zn]≥40 atomic %, [In]≤15 atomic %, [Sn]≤4 atomic % are satisfied.</description><language>kor</language><subject>ARTIFICIAL STONE ; CEMENTS ; CERAMICS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SLAG ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TREATMENT OF NATURAL STONE</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191122&DB=EPODOC&CC=KR&NR=20190130663A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191122&DB=EPODOC&CC=KR&NR=20190130663A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAO YUKI</creatorcontrib><creatorcontrib>NISHIYAMA KOHEI</creatorcontrib><title>산화물 소결체 및 스퍼터링 타깃</title><description>본 발명은, 금속 원소가 In, Ga, Zn 및 Sn으로 구성되고, InGaO(ZnO)(m은 1 내지 6의 정수)으로 표시되는 육방정 층상 화합물을 포함하는 산화물 소결체이며, 상기 산화물 소결체에 포함되는 산소를 제외한 전체 금속 원소에 대한, In, Zn 및 Sn의 함유량의 비율(원자％)을, 각각 [In], [Zn] 및 [Sn]이라 하였을 때, 식 (1) 내지 (3)을 만족시키는 산화물 소결체에 관한 것이다. [Zn]≥40원자％...(1), [In]≤15원자％...(2), [Sn]≤4원자％...(3). 본 발명에 따르면, Zn이 다량으로 첨가된 In-Ga-Zn-Sn계 산화물 소결체에 있어서도, 본딩 시의 균열의 발생을 억제할 수 있다.
An oxide sintered body having metal elements composed of In, Ga, Zn and Sn and containing a hexagonal layered compound represented by InGaO3(ZnO)m (m is an integer of 1 to 6). When ratios (atomic %) of contents of In, Zn and Sn to all metal elements excluding oxygen contained in the oxide sintered body are taken as [In], [Zn] and [Sn], respectively, the relations [Zn]≥40 atomic %, [In]≤15 atomic %, [Sn]≤4 atomic % are satisfied.</description><subject>ARTIFICIAL STONE</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SLAG</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB-07Th7cwpr9fsUXjT1vNq04Y3m7YovN7Qr_Cma8nb3j1vWza8Xt6o8La54dXOZh4G1rTEnOJUXijNzaDs5hri7KGbWpAfn1pckJicmpdaEu8dZGRgaGlgaGxgZmbsaEycKgB0ajZX</recordid><startdate>20191122</startdate><enddate>20191122</enddate><creator>TAO YUKI</creator><creator>NISHIYAMA KOHEI</creator><scope>EVB</scope></search><sort><creationdate>20191122</creationdate><title>산화물 소결체 및 스퍼터링 타깃</title><author>TAO YUKI ; NISHIYAMA KOHEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20190130663A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>kor</language><creationdate>2019</creationdate><topic>ARTIFICIAL STONE</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SLAG</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>TAO YUKI</creatorcontrib><creatorcontrib>NISHIYAMA KOHEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAO YUKI</au><au>NISHIYAMA KOHEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>산화물 소결체 및 스퍼터링 타깃</title><date>2019-11-22</date><risdate>2019</risdate><abstract>본 발명은, 금속 원소가 In, Ga, Zn 및 Sn으로 구성되고, InGaO(ZnO)(m은 1 내지 6의 정수)으로 표시되는 육방정 층상 화합물을 포함하는 산화물 소결체이며, 상기 산화물 소결체에 포함되는 산소를 제외한 전체 금속 원소에 대한, In, Zn 및 Sn의 함유량의 비율(원자％)을, 각각 [In], [Zn] 및 [Sn]이라 하였을 때, 식 (1) 내지 (3)을 만족시키는 산화물 소결체에 관한 것이다. [Zn]≥40원자％...(1), [In]≤15원자％...(2), [Sn]≤4원자％...(3). 본 발명에 따르면, Zn이 다량으로 첨가된 In-Ga-Zn-Sn계 산화물 소결체에 있어서도, 본딩 시의 균열의 발생을 억제할 수 있다.
An oxide sintered body having metal elements composed of In, Ga, Zn and Sn and containing a hexagonal layered compound represented by InGaO3(ZnO)m (m is an integer of 1 to 6). When ratios (atomic %) of contents of In, Zn and Sn to all metal elements excluding oxygen contained in the oxide sintered body are taken as [In], [Zn] and [Sn], respectively, the relations [Zn]≥40 atomic %, [In]≤15 atomic %, [Sn]≤4 atomic % are satisfied.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE |
| title | 산화물 소결체 및 스퍼터링 타깃 |
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