CVD Wafer Transfer Device and Chemical Vapor Deposition Apparatus Having The Same
The present invention provides a wafer transfer device, including: a first blade coupled to a robot arm; second and third blades respectively extended from the first blade; an inner side mounting unit provided on the first blade and supporting one side of a wafer; and an outer side mounting unit res...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; kor |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | CHO JANG SU LEE SE RI PI JOONG HO |
| description | The present invention provides a wafer transfer device, including: a first blade coupled to a robot arm; second and third blades respectively extended from the first blade; an inner side mounting unit provided on the first blade and supporting one side of a wafer; and an outer side mounting unit respectively provided on the outside of the second and third blades and supporting the other side of the wafer, wherein the outer side mounting unit includes: a support block supporting an inner side area of the edge of the other side of the wafer; an edge block spaced apart so as to surround the edge of the wafer; and a dented groove positioned below the edge of the wafer and formed between the support block and the edge block.
본 발명은 로봇암과 결합되는 제1 블레이드; 상기 제1 블레이드에서 각각 연장되는 제2 및 제3 블레이드; 상기 제1 블레이드에 구비되며, 웨이퍼의 일측을 지지하는 내측 안착부; 및 상기 제2 및 제3 블레이드의 외측에 각각 구비되어 상기 웨이퍼의 타측을 지지하는 외측 안착부를 포함하며, 상기 외측 안착부는, 상기 웨이퍼의 타측 가장자리 내측 영역을 지지하는 지지블럭; 상기 웨이퍼의 가장자리를 감싸도록 이격 배치되는 에지블럭; 및 상기 웨이퍼의 가장자리 아래에 위치하며, 상기 지지블럭과 상기 에지블럭 사이에 형성된 함몰홈을 포함하는, 웨이퍼 이송 기구를 제공한다. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20190130304A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20190130304A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20190130304A3</originalsourceid><addsrcrecordid>eNrjZAh0DnNRCE9MSy1SCClKzCsGMVxSyzKTUxUS81IUnDNSczOTE3MUwhIL8kEyBfnFmSWZ-XkKjgUFiUWJJaXFCh6JZZl56QohGakKwYm5qTwMrGmJOcWpvFCam0HZzTXE2UMXqDc-tbggMTk1L7Uk3jvIyMDQ0sDQ2MDYwMTRmDhVANaqNu0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CVD Wafer Transfer Device and Chemical Vapor Deposition Apparatus Having The Same</title><source>esp@cenet</source><creator>CHO JANG SU ; LEE SE RI ; PI JOONG HO</creator><creatorcontrib>CHO JANG SU ; LEE SE RI ; PI JOONG HO</creatorcontrib><description>The present invention provides a wafer transfer device, including: a first blade coupled to a robot arm; second and third blades respectively extended from the first blade; an inner side mounting unit provided on the first blade and supporting one side of a wafer; and an outer side mounting unit respectively provided on the outside of the second and third blades and supporting the other side of the wafer, wherein the outer side mounting unit includes: a support block supporting an inner side area of the edge of the other side of the wafer; an edge block spaced apart so as to surround the edge of the wafer; and a dented groove positioned below the edge of the wafer and formed between the support block and the edge block.
본 발명은 로봇암과 결합되는 제1 블레이드; 상기 제1 블레이드에서 각각 연장되는 제2 및 제3 블레이드; 상기 제1 블레이드에 구비되며, 웨이퍼의 일측을 지지하는 내측 안착부; 및 상기 제2 및 제3 블레이드의 외측에 각각 구비되어 상기 웨이퍼의 타측을 지지하는 외측 안착부를 포함하며, 상기 외측 안착부는, 상기 웨이퍼의 타측 가장자리 내측 영역을 지지하는 지지블럭; 상기 웨이퍼의 가장자리를 감싸도록 이격 배치되는 에지블럭; 및 상기 웨이퍼의 가장자리 아래에 위치하며, 상기 지지블럭과 상기 에지블럭 사이에 형성된 함몰홈을 포함하는, 웨이퍼 이송 기구를 제공한다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191122&DB=EPODOC&CC=KR&NR=20190130304A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191122&DB=EPODOC&CC=KR&NR=20190130304A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHO JANG SU</creatorcontrib><creatorcontrib>LEE SE RI</creatorcontrib><creatorcontrib>PI JOONG HO</creatorcontrib><title>CVD Wafer Transfer Device and Chemical Vapor Deposition Apparatus Having The Same</title><description>The present invention provides a wafer transfer device, including: a first blade coupled to a robot arm; second and third blades respectively extended from the first blade; an inner side mounting unit provided on the first blade and supporting one side of a wafer; and an outer side mounting unit respectively provided on the outside of the second and third blades and supporting the other side of the wafer, wherein the outer side mounting unit includes: a support block supporting an inner side area of the edge of the other side of the wafer; an edge block spaced apart so as to surround the edge of the wafer; and a dented groove positioned below the edge of the wafer and formed between the support block and the edge block.
본 발명은 로봇암과 결합되는 제1 블레이드; 상기 제1 블레이드에서 각각 연장되는 제2 및 제3 블레이드; 상기 제1 블레이드에 구비되며, 웨이퍼의 일측을 지지하는 내측 안착부; 및 상기 제2 및 제3 블레이드의 외측에 각각 구비되어 상기 웨이퍼의 타측을 지지하는 외측 안착부를 포함하며, 상기 외측 안착부는, 상기 웨이퍼의 타측 가장자리 내측 영역을 지지하는 지지블럭; 상기 웨이퍼의 가장자리를 감싸도록 이격 배치되는 에지블럭; 및 상기 웨이퍼의 가장자리 아래에 위치하며, 상기 지지블럭과 상기 에지블럭 사이에 형성된 함몰홈을 포함하는, 웨이퍼 이송 기구를 제공한다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAh0DnNRCE9MSy1SCClKzCsGMVxSyzKTUxUS81IUnDNSczOTE3MUwhIL8kEyBfnFmSWZ-XkKjgUFiUWJJaXFCh6JZZl56QohGakKwYm5qTwMrGmJOcWpvFCam0HZzTXE2UMXqDc-tbggMTk1L7Uk3jvIyMDQ0sDQ2MDYwMTRmDhVANaqNu0</recordid><startdate>20191122</startdate><enddate>20191122</enddate><creator>CHO JANG SU</creator><creator>LEE SE RI</creator><creator>PI JOONG HO</creator><scope>EVB</scope></search><sort><creationdate>20191122</creationdate><title>CVD Wafer Transfer Device and Chemical Vapor Deposition Apparatus Having The Same</title><author>CHO JANG SU ; LEE SE RI ; PI JOONG HO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20190130304A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>CHO JANG SU</creatorcontrib><creatorcontrib>LEE SE RI</creatorcontrib><creatorcontrib>PI JOONG HO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHO JANG SU</au><au>LEE SE RI</au><au>PI JOONG HO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CVD Wafer Transfer Device and Chemical Vapor Deposition Apparatus Having The Same</title><date>2019-11-22</date><risdate>2019</risdate><abstract>The present invention provides a wafer transfer device, including: a first blade coupled to a robot arm; second and third blades respectively extended from the first blade; an inner side mounting unit provided on the first blade and supporting one side of a wafer; and an outer side mounting unit respectively provided on the outside of the second and third blades and supporting the other side of the wafer, wherein the outer side mounting unit includes: a support block supporting an inner side area of the edge of the other side of the wafer; an edge block spaced apart so as to surround the edge of the wafer; and a dented groove positioned below the edge of the wafer and formed between the support block and the edge block.
본 발명은 로봇암과 결합되는 제1 블레이드; 상기 제1 블레이드에서 각각 연장되는 제2 및 제3 블레이드; 상기 제1 블레이드에 구비되며, 웨이퍼의 일측을 지지하는 내측 안착부; 및 상기 제2 및 제3 블레이드의 외측에 각각 구비되어 상기 웨이퍼의 타측을 지지하는 외측 안착부를 포함하며, 상기 외측 안착부는, 상기 웨이퍼의 타측 가장자리 내측 영역을 지지하는 지지블럭; 상기 웨이퍼의 가장자리를 감싸도록 이격 배치되는 에지블럭; 및 상기 웨이퍼의 가장자리 아래에 위치하며, 상기 지지블럭과 상기 에지블럭 사이에 형성된 함몰홈을 포함하는, 웨이퍼 이송 기구를 제공한다.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; kor |
| recordid | cdi_epo_espacenet_KR20190130304A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | CVD Wafer Transfer Device and Chemical Vapor Deposition Apparatus Having The Same |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T13%3A40%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHO%20JANG%20SU&rft.date=2019-11-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20190130304A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |