SEMICONDUCTOR SUBSTRATE MEASURING APPARATUS AND PLASMA TREATMENT APPARATUS USING THE SAME
According to an embodiment of the present invention, provided is a semiconductor substrate measurement apparatus including: a light source part generating emission light including light of a first wavelength band and a second wavelength band longer than the first wavelength band; an optical part emi...
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| creator | AHN SEUNG BIN INN KUL OH SE JIN KANG TAE KYUN KIM JAE IK KIM YU SIN JEON YUN KWANG MO CHAN BIN SUNG DOUG YONG |
| description | According to an embodiment of the present invention, provided is a semiconductor substrate measurement apparatus including: a light source part generating emission light including light of a first wavelength band and a second wavelength band longer than the first wavelength band; an optical part emitting the emission light to an object to be measured, and collecting reflected light from the surface of the object; a light dividing part dividing the reflection light collected by the optical part into first and second optical paths; a first detecting part placed on the first optical path and detecting first interference light of the first wavelength band from the reflection light; a second detecting part placed on the second optical path and detecting second interference light of the second wavelength band from the reflection light; and a control part calculating at least one of the surface shape and thickness of the object based on the first interference light, and calculating the temperature of the subject based on the second interference light. Therefore, the present invention is capable of measuring the thickness and shape of a film on a semiconductor substrate and the temperature of the substrate at the same time.
본 발명의 일 실시예는, 제1 파장 대역 및 상기 제1 파장 대역보다 긴 파장을 갖는 제2 파장 대역의 광을 포함하는 조사광을 생성하는 광원부; 상기 조사광을 측정 대상물에 조사하고, 상기 측정 대상물의 표면에서 반사된 반사광을 집광하는 광학부; 상기 광학부에서 집광된 상기 반사광을 제1 및 제2 광경로로 분기하는 광분할부; 상기 제1 광경로 상에 배치되며 상기 반사광에서 상기 제1 파장 대역의 제1 간섭광을 검출하는 제1 검출부; 상기 제2 광경로 상에 배치되며 상기 반사광에서 상기 제2 파장 대역의 제2 간섭광을 검출하는 제2 검출부; 및 상기 제1 간섭광에 기초하여 상기 측정 대상물의 표면 형상 및 두께 중 적어도 하나를 산출하고, 상기 제2 간섭광에 기초하여 상기 측정 대상물의 온도를 산출하는 제어부;를 포함하는 반도체 기판 측정 장치를 제공할 수 있다. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20190122414A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20190122414A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20190122414A3</originalsourceid><addsrcrecordid>eNqNirEKwjAQQLM4iPoPB85CE7s4nulpiyYNucvQqRSJk2ih_j8qODg6PXjvzVXH5Brb-ipZaSNw2rNEFAJHyCk2_ggYAr5VYkBfQTgjOwSJhOLIy09O_NmlJmB0tFSz63Cb8urLhVofSGy9yeOjz9M4XPI9P_tTNIXeFdqYUpe4_e96ATWZMss</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR SUBSTRATE MEASURING APPARATUS AND PLASMA TREATMENT APPARATUS USING THE SAME</title><source>esp@cenet</source><creator>AHN SEUNG BIN ; INN KUL ; OH SE JIN ; KANG TAE KYUN ; KIM JAE IK ; KIM YU SIN ; JEON YUN KWANG ; MO CHAN BIN ; SUNG DOUG YONG</creator><creatorcontrib>AHN SEUNG BIN ; INN KUL ; OH SE JIN ; KANG TAE KYUN ; KIM JAE IK ; KIM YU SIN ; JEON YUN KWANG ; MO CHAN BIN ; SUNG DOUG YONG</creatorcontrib><description>According to an embodiment of the present invention, provided is a semiconductor substrate measurement apparatus including: a light source part generating emission light including light of a first wavelength band and a second wavelength band longer than the first wavelength band; an optical part emitting the emission light to an object to be measured, and collecting reflected light from the surface of the object; a light dividing part dividing the reflection light collected by the optical part into first and second optical paths; a first detecting part placed on the first optical path and detecting first interference light of the first wavelength band from the reflection light; a second detecting part placed on the second optical path and detecting second interference light of the second wavelength band from the reflection light; and a control part calculating at least one of the surface shape and thickness of the object based on the first interference light, and calculating the temperature of the subject based on the second interference light. Therefore, the present invention is capable of measuring the thickness and shape of a film on a semiconductor substrate and the temperature of the substrate at the same time.
본 발명의 일 실시예는, 제1 파장 대역 및 상기 제1 파장 대역보다 긴 파장을 갖는 제2 파장 대역의 광을 포함하는 조사광을 생성하는 광원부; 상기 조사광을 측정 대상물에 조사하고, 상기 측정 대상물의 표면에서 반사된 반사광을 집광하는 광학부; 상기 광학부에서 집광된 상기 반사광을 제1 및 제2 광경로로 분기하는 광분할부; 상기 제1 광경로 상에 배치되며 상기 반사광에서 상기 제1 파장 대역의 제1 간섭광을 검출하는 제1 검출부; 상기 제2 광경로 상에 배치되며 상기 반사광에서 상기 제2 파장 대역의 제2 간섭광을 검출하는 제2 검출부; 및 상기 제1 간섭광에 기초하여 상기 측정 대상물의 표면 형상 및 두께 중 적어도 하나를 산출하고, 상기 제2 간섭광에 기초하여 상기 측정 대상물의 온도를 산출하는 제어부;를 포함하는 반도체 기판 측정 장치를 제공할 수 있다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191030&DB=EPODOC&CC=KR&NR=20190122414A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191030&DB=EPODOC&CC=KR&NR=20190122414A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AHN SEUNG BIN</creatorcontrib><creatorcontrib>INN KUL</creatorcontrib><creatorcontrib>OH SE JIN</creatorcontrib><creatorcontrib>KANG TAE KYUN</creatorcontrib><creatorcontrib>KIM JAE IK</creatorcontrib><creatorcontrib>KIM YU SIN</creatorcontrib><creatorcontrib>JEON YUN KWANG</creatorcontrib><creatorcontrib>MO CHAN BIN</creatorcontrib><creatorcontrib>SUNG DOUG YONG</creatorcontrib><title>SEMICONDUCTOR SUBSTRATE MEASURING APPARATUS AND PLASMA TREATMENT APPARATUS USING THE SAME</title><description>According to an embodiment of the present invention, provided is a semiconductor substrate measurement apparatus including: a light source part generating emission light including light of a first wavelength band and a second wavelength band longer than the first wavelength band; an optical part emitting the emission light to an object to be measured, and collecting reflected light from the surface of the object; a light dividing part dividing the reflection light collected by the optical part into first and second optical paths; a first detecting part placed on the first optical path and detecting first interference light of the first wavelength band from the reflection light; a second detecting part placed on the second optical path and detecting second interference light of the second wavelength band from the reflection light; and a control part calculating at least one of the surface shape and thickness of the object based on the first interference light, and calculating the temperature of the subject based on the second interference light. Therefore, the present invention is capable of measuring the thickness and shape of a film on a semiconductor substrate and the temperature of the substrate at the same time.
본 발명의 일 실시예는, 제1 파장 대역 및 상기 제1 파장 대역보다 긴 파장을 갖는 제2 파장 대역의 광을 포함하는 조사광을 생성하는 광원부; 상기 조사광을 측정 대상물에 조사하고, 상기 측정 대상물의 표면에서 반사된 반사광을 집광하는 광학부; 상기 광학부에서 집광된 상기 반사광을 제1 및 제2 광경로로 분기하는 광분할부; 상기 제1 광경로 상에 배치되며 상기 반사광에서 상기 제1 파장 대역의 제1 간섭광을 검출하는 제1 검출부; 상기 제2 광경로 상에 배치되며 상기 반사광에서 상기 제2 파장 대역의 제2 간섭광을 검출하는 제2 검출부; 및 상기 제1 간섭광에 기초하여 상기 측정 대상물의 표면 형상 및 두께 중 적어도 하나를 산출하고, 상기 제2 간섭광에 기초하여 상기 측정 대상물의 온도를 산출하는 제어부;를 포함하는 반도체 기판 측정 장치를 제공할 수 있다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNirEKwjAQQLM4iPoPB85CE7s4nulpiyYNucvQqRSJk2ih_j8qODg6PXjvzVXH5Brb-ipZaSNw2rNEFAJHyCk2_ggYAr5VYkBfQTgjOwSJhOLIy09O_NmlJmB0tFSz63Cb8urLhVofSGy9yeOjz9M4XPI9P_tTNIXeFdqYUpe4_e96ATWZMss</recordid><startdate>20191030</startdate><enddate>20191030</enddate><creator>AHN SEUNG BIN</creator><creator>INN KUL</creator><creator>OH SE JIN</creator><creator>KANG TAE KYUN</creator><creator>KIM JAE IK</creator><creator>KIM YU SIN</creator><creator>JEON YUN KWANG</creator><creator>MO CHAN BIN</creator><creator>SUNG DOUG YONG</creator><scope>EVB</scope></search><sort><creationdate>20191030</creationdate><title>SEMICONDUCTOR SUBSTRATE MEASURING APPARATUS AND PLASMA TREATMENT APPARATUS USING THE SAME</title><author>AHN SEUNG BIN ; INN KUL ; OH SE JIN ; KANG TAE KYUN ; KIM JAE IK ; KIM YU SIN ; JEON YUN KWANG ; MO CHAN BIN ; SUNG DOUG YONG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20190122414A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>AHN SEUNG BIN</creatorcontrib><creatorcontrib>INN KUL</creatorcontrib><creatorcontrib>OH SE JIN</creatorcontrib><creatorcontrib>KANG TAE KYUN</creatorcontrib><creatorcontrib>KIM JAE IK</creatorcontrib><creatorcontrib>KIM YU SIN</creatorcontrib><creatorcontrib>JEON YUN KWANG</creatorcontrib><creatorcontrib>MO CHAN BIN</creatorcontrib><creatorcontrib>SUNG DOUG YONG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AHN SEUNG BIN</au><au>INN KUL</au><au>OH SE JIN</au><au>KANG TAE KYUN</au><au>KIM JAE IK</au><au>KIM YU SIN</au><au>JEON YUN KWANG</au><au>MO CHAN BIN</au><au>SUNG DOUG YONG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR SUBSTRATE MEASURING APPARATUS AND PLASMA TREATMENT APPARATUS USING THE SAME</title><date>2019-10-30</date><risdate>2019</risdate><abstract>According to an embodiment of the present invention, provided is a semiconductor substrate measurement apparatus including: a light source part generating emission light including light of a first wavelength band and a second wavelength band longer than the first wavelength band; an optical part emitting the emission light to an object to be measured, and collecting reflected light from the surface of the object; a light dividing part dividing the reflection light collected by the optical part into first and second optical paths; a first detecting part placed on the first optical path and detecting first interference light of the first wavelength band from the reflection light; a second detecting part placed on the second optical path and detecting second interference light of the second wavelength band from the reflection light; and a control part calculating at least one of the surface shape and thickness of the object based on the first interference light, and calculating the temperature of the subject based on the second interference light. Therefore, the present invention is capable of measuring the thickness and shape of a film on a semiconductor substrate and the temperature of the substrate at the same time.
본 발명의 일 실시예는, 제1 파장 대역 및 상기 제1 파장 대역보다 긴 파장을 갖는 제2 파장 대역의 광을 포함하는 조사광을 생성하는 광원부; 상기 조사광을 측정 대상물에 조사하고, 상기 측정 대상물의 표면에서 반사된 반사광을 집광하는 광학부; 상기 광학부에서 집광된 상기 반사광을 제1 및 제2 광경로로 분기하는 광분할부; 상기 제1 광경로 상에 배치되며 상기 반사광에서 상기 제1 파장 대역의 제1 간섭광을 검출하는 제1 검출부; 상기 제2 광경로 상에 배치되며 상기 반사광에서 상기 제2 파장 대역의 제2 간섭광을 검출하는 제2 검출부; 및 상기 제1 간섭광에 기초하여 상기 측정 대상물의 표면 형상 및 두께 중 적어도 하나를 산출하고, 상기 제2 간섭광에 기초하여 상기 측정 대상물의 온도를 산출하는 제어부;를 포함하는 반도체 기판 측정 장치를 제공할 수 있다.</abstract><oa>free_for_read</oa></addata></record> |
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| title | SEMICONDUCTOR SUBSTRATE MEASURING APPARATUS AND PLASMA TREATMENT APPARATUS USING THE SAME |
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