SRAM CELL FOR GENERATING TRUE RANDOM NUMBER AND SRAM CELL ARRY DRIVING CIRCUIT USING THE SAME

The present invention relates to a technique capable of the generation a true random number of a natural state by using static noise margin characteristics and read noise margin characteristics of a static random access memory (SRAM). A first aspect of the present invention is to reduce a noise marg...

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Bibliographische Detailangaben

1. Verfasser:	AHN, SANG WOOK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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