SEMICONDUCTOR DEVICE STRUCTURE WITH ANTI-ACID LAYER AND METHOD FOR FORMING THE SAME

A semiconductor device structure and a method of forming the same are provided. The semiconductor device structure includes an interconnection structure formed on a substrate, and a passivation layer formed on the interconnection structure. The semiconductor device structure also includes an anti-ac...

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Hauptverfasser: LIANG YAO HSIANG, TSAI MIN CHIH, CHU YIN SHUO, YU CHI CHUNG, CHANG TAIN SHANG, FANG LI YEN
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Sprache:eng ; kor
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creator LIANG YAO HSIANG
TSAI MIN CHIH
CHU YIN SHUO
YU CHI CHUNG
CHANG TAIN SHANG
FANG LI YEN
description A semiconductor device structure and a method of forming the same are provided. The semiconductor device structure includes an interconnection structure formed on a substrate, and a passivation layer formed on the interconnection structure. The semiconductor device structure also includes an anti-acid layer formed in the passivation layer, and a bonding layer formed on the anti-acid layer and the passivation layer. The anti-acid layer has a thickness greater than about 140 nm. 반도체 장치 구조물 및 그 형성 방법이 제공된다. 반도체 장치 구조물은 기판 위에 형성된 상호연결 구조물 및 그러한 상호연결 구조물 위에 형성된 패시베이션 층을 포함한다. 반도체 장치 구조물은 또한 패시베이션 층 내에 형성된 내산 층, 그리고 내산 층 및 패시베이션 층 위에 형성된 본딩 층을 포함한다. 내산 층은, 약 140 nm보다 큰 두께를 갖는다.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE STRUCTURE WITH ANTI-ACID LAYER AND METHOD FOR FORMING THE SAME
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