웨이퍼의 제조 방법

와이어 소를 이용한 단결정 잉곳의 절단에 의해 웨이퍼를 제조하는 웨이퍼의 제조 방법으로서, 와이어 소의 와이어에 있어서의 제1 단결정 잉곳의 절단에 이용된 영역 중, 마모량이 최댓값에서 안정되고 직경이 최솟값에서 일정하게 되는 와이어 지름 안정 영역(R2)만을 이용하여, 제2 단결정 잉곳을 절단한다. A wafer manufacturing method for manufacturing wafers by cutting a single crystal ingot using a wire saw, wherein, of the regions o...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	TAKADA MASAO, FUNAYAMA MAKOTO, YOSHIHARA TSUKASA, CHIWATA KENJI
Format:	Patent
Sprache:	kor
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING WORKING CEMENT, CLAY, OR STONE WORKING STONE OR STONE-LIKE MATERIALS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	TAKADA MASAO FUNAYAMA MAKOTO YOSHIHARA TSUKASA CHIWATA KENJI
description	와이어 소를 이용한 단결정 잉곳의 절단에 의해 웨이퍼를 제조하는 웨이퍼의 제조 방법으로서, 와이어 소의 와이어에 있어서의 제1 단결정 잉곳의 절단에 이용된 영역 중, 마모량이 최댓값에서 안정되고 직경이 최솟값에서 일정하게 되는 와이어 지름 안정 영역(R2)만을 이용하여, 제2 단결정 잉곳을 절단한다. A wafer manufacturing method for manufacturing wafers by cutting a single crystal ingot using a wire saw, wherein, of the regions of the wire of the wire saw used in cutting a first single crystal ingot, a second single crystal ingot is cut using only the stable wire diameter regions (R2) in which the amount of wear is stable at a maximum value and the diameter is a constant minimum value.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20180097744A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20180097744A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20180097744A3</originalsourceid><addsrcrecordid>eNrjZJB6M3vFm7lb3vbueTN3hsKbBXPeLNyg8HrDytebpvIwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUknjvICMDQwsDA0tzcxMTR2PiVAEAGgUrzw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>웨이퍼의 제조 방법</title><source>esp@cenet</source><creator>TAKADA MASAO ; FUNAYAMA MAKOTO ; YOSHIHARA TSUKASA ; CHIWATA KENJI</creator><creatorcontrib>TAKADA MASAO ; FUNAYAMA MAKOTO ; YOSHIHARA TSUKASA ; CHIWATA KENJI</creatorcontrib><description>와이어 소를 이용한 단결정 잉곳의 절단에 의해 웨이퍼를 제조하는 웨이퍼의 제조 방법으로서, 와이어 소의 와이어에 있어서의 제1 단결정 잉곳의 절단에 이용된 영역 중, 마모량이 최댓값에서 안정되고 직경이 최솟값에서 일정하게 되는 와이어 지름 안정 영역(R2)만을 이용하여, 제2 단결정 잉곳을 절단한다. A wafer manufacturing method for manufacturing wafers by cutting a single crystal ingot using a wire saw, wherein, of the regions of the wire of the wire saw used in cutting a first single crystal ingot, a second single crystal ingot is cut using only the stable wire diameter regions (R2) in which the amount of wear is stable at a maximum value and the diameter is a constant minimum value.</description><language>kor</language><subject>BASIC ELECTRIC ELEMENTS ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; PERFORMING OPERATIONS ; POLISHING ; SEMICONDUCTOR DEVICES ; TRANSPORTING ; WORKING CEMENT, CLAY, OR STONE ; WORKING STONE OR STONE-LIKE MATERIALS</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180831&DB=EPODOC&CC=KR&NR=20180097744A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180831&DB=EPODOC&CC=KR&NR=20180097744A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKADA MASAO</creatorcontrib><creatorcontrib>FUNAYAMA MAKOTO</creatorcontrib><creatorcontrib>YOSHIHARA TSUKASA</creatorcontrib><creatorcontrib>CHIWATA KENJI</creatorcontrib><title>웨이퍼의 제조 방법</title><description>와이어 소를 이용한 단결정 잉곳의 절단에 의해 웨이퍼를 제조하는 웨이퍼의 제조 방법으로서, 와이어 소의 와이어에 있어서의 제1 단결정 잉곳의 절단에 이용된 영역 중, 마모량이 최댓값에서 안정되고 직경이 최솟값에서 일정하게 되는 와이어 지름 안정 영역(R2)만을 이용하여, 제2 단결정 잉곳을 절단한다. A wafer manufacturing method for manufacturing wafers by cutting a single crystal ingot using a wire saw, wherein, of the regions of the wire of the wire saw used in cutting a first single crystal ingot, a second single crystal ingot is cut using only the stable wire diameter regions (R2) in which the amount of wear is stable at a maximum value and the diameter is a constant minimum value.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><subject>WORKING CEMENT, CLAY, OR STONE</subject><subject>WORKING STONE OR STONE-LIKE MATERIALS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJB6M3vFm7lb3vbueTN3hsKbBXPeLNyg8HrDytebpvIwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUknjvICMDQwsDA0tzcxMTR2PiVAEAGgUrzw</recordid><startdate>20180831</startdate><enddate>20180831</enddate><creator>TAKADA MASAO</creator><creator>FUNAYAMA MAKOTO</creator><creator>YOSHIHARA TSUKASA</creator><creator>CHIWATA KENJI</creator><scope>EVB</scope></search><sort><creationdate>20180831</creationdate><title>웨이퍼의 제조 방법</title><author>TAKADA MASAO ; FUNAYAMA MAKOTO ; YOSHIHARA TSUKASA ; CHIWATA KENJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20180097744A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>kor</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><topic>WORKING CEMENT, CLAY, OR STONE</topic><topic>WORKING STONE OR STONE-LIKE MATERIALS</topic><toplevel>online_resources</toplevel><creatorcontrib>TAKADA MASAO</creatorcontrib><creatorcontrib>FUNAYAMA MAKOTO</creatorcontrib><creatorcontrib>YOSHIHARA TSUKASA</creatorcontrib><creatorcontrib>CHIWATA KENJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAKADA MASAO</au><au>FUNAYAMA MAKOTO</au><au>YOSHIHARA TSUKASA</au><au>CHIWATA KENJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>웨이퍼의 제조 방법</title><date>2018-08-31</date><risdate>2018</risdate><abstract>와이어 소를 이용한 단결정 잉곳의 절단에 의해 웨이퍼를 제조하는 웨이퍼의 제조 방법으로서, 와이어 소의 와이어에 있어서의 제1 단결정 잉곳의 절단에 이용된 영역 중, 마모량이 최댓값에서 안정되고 직경이 최솟값에서 일정하게 되는 와이어 지름 안정 영역(R2)만을 이용하여, 제2 단결정 잉곳을 절단한다. A wafer manufacturing method for manufacturing wafers by cutting a single crystal ingot using a wire saw, wherein, of the regions of the wire of the wire saw used in cutting a first single crystal ingot, a second single crystal ingot is cut using only the stable wire diameter regions (R2) in which the amount of wear is stable at a maximum value and the diameter is a constant minimum value.</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	kor
recordid	cdi_epo_espacenet_KR20180097744A
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING WORKING CEMENT, CLAY, OR STONE WORKING STONE OR STONE-LIKE MATERIALS
title	웨이퍼의 제조 방법
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T20%3A50%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TAKADA%20MASAO&rft.date=2018-08-31&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20180097744A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true