TRANSISTOR HAVING DOPED ORGANIC THIN LAYER

An embodiment of the present invention relates to a thin film transistor which can block a gas and a metal ion, and can adjust semiconductor characteristics. The thin film transistor comprises: a substrate; a gate electrode formed on the substrate; an insulator layer formed to cover the gate electro...

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Bibliographische Detailangaben
Hauptverfasser:	CHOI, BYUNG DOO, KIM, MYUNG GIL, KIM, CHOONG IK, KWON, GU HYUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An embodiment of the present invention relates to a thin film transistor which can block a gas and a metal ion, and can adjust semiconductor characteristics. The thin film transistor comprises: a substrate; a gate electrode formed on the substrate; an insulator layer formed to cover the gate electrode; a semiconductor layer formed on the insulator layer; an organic material layer formed on the semiconductor layer; and source and drain electrodes formed on the organic material layer, and separated from each other. According to another embodiment of the present invention, the organic material layer arranged between the source electrode and the semiconductor layer, and the drain electrode and the semiconductor layer is a doped organic material layer. 본 발명의 일실시예는 기판; 상기 기판 상에 형성된 게이트 전극; 상기 게이트 전극을 덮도록 형성된 절연체층; 상기 절연체층 상에 형성된 반도체층; 상기 반도체층 상에 형성된 유기물층; 및 상기 유기물층 상에 형성되며, 서로 이격된 소스 전극 및 드레인 전극을 포함하는 박막 트랜지스터이다. 다른 실시예는 상기 소스 전극과 반도체층 및 상기 드레인 전극과 반도체층 사이에 배치된 유기물층은 도핑된 유기물층이다.