IMAGE SENSOR AND METHOD FOR MANUFACTURING SAME
(a) 컬러 필터의 화소와 (b) 무기 보호층과 (c) 유기 광전 변환부와 (d) 무기 광전 변환부를 갖는 이미지 센서의 제조 방법으로서, 상기 무기 보호층 (b)를 상기 유기 광전 변환부 (c) 상에 마련하는 공정을 갖는 이미지 센서의 제조 방법. A method for manufacturing an image sensor having (a) color filter pixels, (b) an inorganic protective layer, (c) an organic photoelectric conversion unit, and...
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creator | MURO NAOTSUGU |
description | (a) 컬러 필터의 화소와 (b) 무기 보호층과 (c) 유기 광전 변환부와 (d) 무기 광전 변환부를 갖는 이미지 센서의 제조 방법으로서, 상기 무기 보호층 (b)를 상기 유기 광전 변환부 (c) 상에 마련하는 공정을 갖는 이미지 센서의 제조 방법.
A method for manufacturing an image sensor having (a) color filter pixels, (b) an inorganic protective layer, (c) an organic photoelectric conversion unit, and (d) an inorganic photoelectric conversion unit; wherein the method for manufacturing an image sensor has a step for providing the (b) inorganic protective layer on the (c) organic photoelectric conversion unit. |
format | Patent |
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A method for manufacturing an image sensor having (a) color filter pixels, (b) an inorganic protective layer, (c) an organic photoelectric conversion unit, and (d) an inorganic photoelectric conversion unit; wherein the method for manufacturing an image sensor has a step for providing the (b) inorganic protective layer on the (c) organic photoelectric conversion unit.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS ; OPTICS ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180626&DB=EPODOC&CC=KR&NR=20180070721A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180626&DB=EPODOC&CC=KR&NR=20180070721A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MURO NAOTSUGU</creatorcontrib><title>IMAGE SENSOR AND METHOD FOR MANUFACTURING SAME</title><description>(a) 컬러 필터의 화소와 (b) 무기 보호층과 (c) 유기 광전 변환부와 (d) 무기 광전 변환부를 갖는 이미지 센서의 제조 방법으로서, 상기 무기 보호층 (b)를 상기 유기 광전 변환부 (c) 상에 마련하는 공정을 갖는 이미지 센서의 제조 방법.
A method for manufacturing an image sensor having (a) color filter pixels, (b) an inorganic protective layer, (c) an organic photoelectric conversion unit, and (d) an inorganic photoelectric conversion unit; wherein the method for manufacturing an image sensor has a step for providing the (b) inorganic protective layer on the (c) organic photoelectric conversion unit.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDz9HV0d1UIdvUL9g9ScPRzUfB1DfHwd1FwA3J9Hf1C3RydQ0KDPP3cFYIdfV15GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakm8d5CRgaGFgYG5gbmRoaMxcaoAXZ8mWw</recordid><startdate>20180626</startdate><enddate>20180626</enddate><creator>MURO NAOTSUGU</creator><scope>EVB</scope></search><sort><creationdate>20180626</creationdate><title>IMAGE SENSOR AND METHOD FOR MANUFACTURING SAME</title><author>MURO NAOTSUGU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20180070721A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MURO NAOTSUGU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MURO NAOTSUGU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>IMAGE SENSOR AND METHOD FOR MANUFACTURING SAME</title><date>2018-06-26</date><risdate>2018</risdate><abstract>(a) 컬러 필터의 화소와 (b) 무기 보호층과 (c) 유기 광전 변환부와 (d) 무기 광전 변환부를 갖는 이미지 센서의 제조 방법으로서, 상기 무기 보호층 (b)를 상기 유기 광전 변환부 (c) 상에 마련하는 공정을 갖는 이미지 센서의 제조 방법.
A method for manufacturing an image sensor having (a) color filter pixels, (b) an inorganic protective layer, (c) an organic photoelectric conversion unit, and (d) an inorganic photoelectric conversion unit; wherein the method for manufacturing an image sensor has a step for providing the (b) inorganic protective layer on the (c) organic photoelectric conversion unit.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS SEMICONDUCTOR DEVICES |
title | IMAGE SENSOR AND METHOD FOR MANUFACTURING SAME |
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